High‐Resolution Depth Profiling of Ultrathin Silicon Oxide/Nitride/Oxide Layers

1993 ◽  
Vol 140 (5) ◽  
pp. 1439-1441 ◽  
Author(s):  
Y. Zhang ◽  
G. S. Oehrlein ◽  
G. M. W. Kroesen ◽  
M. Wittmer ◽  
K. Stein
Keyword(s):  
High Resolution ◽  
Silicon Oxide ◽  
Depth Profiling ◽  
Oxide Layers ◽  
Nitride Oxide

Sub-Nanometric Resolution Depth Profiling of Ultrathin Ono Structures

1999 ◽  
Vol 567 ◽  
Author(s):  
C. Radtke ◽  
T.D.M. Salgado ◽  
C. Krug ◽  
J. de Andrade ◽  
I.J.R. Baumvol
Keyword(s):  
Silicon Oxide ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Nuclear Reaction Analysis ◽  
Near Surface ◽  
Atomic Transport ◽  
Thermal Growth ◽  
Nitride Oxide

ABSTRACTUltrathin silicon oxide/nitride/oxide films on silicon prepared by the usual route -thermal growth of an oxide followed by deposition of a nitride layer by chemical vapor deposition, and finally a reoxidation step - were characterized using isotopic substitution of N and O and depth profiling with sub-nanometric resolution. The redistribution of N and O during the oxide/nitride/oxide film processing was investigated by: i) 15N and 18O depth profiling by means of narrow nuclear resonance, and ii) 16O profiling using step-by-step chemical dissolution associated with areal densities determinations by nuclear reaction analysis. It was observed that the reoxidation step, here performed varying temperature and time, induces atomic transport of O and N thus resulting in oxide/nitride/oxide structures which are not stacked layered ones, but rather silicon oxynitride ultrathin films, in which the N concentration presents a maximum in the bulk and is moderate in the near-surface and near-interface regions.

High resolution Fowler‐Nordheim field emission maps of thin silicon oxide layers

1996 ◽  
Vol 68 (1) ◽  
pp. 93-95 ◽  
Author(s):  
Todd G. Ruskell ◽  
Richard K. Workman ◽  
Dong Chen ◽  
Dror Sarid ◽  
Sarah Dahl ◽  
...  
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Silicon Oxide ◽  
Oxide Layers ◽  
Thin Silicon

Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

1999 ◽  
Vol 85 (5) ◽  
pp. 2921-2928 ◽  
Author(s):  
Toshiko Mizokuro ◽  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Low Temperature ◽  
Electron Impact ◽  
Silicon Oxide ◽  
Nitrogen Plasma ◽  
Low Energy ◽  
Energy Electron ◽  
Oxide Layers ◽  
Low Energy Electron

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

scholarly journals Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states

2008 ◽  
Vol 40 (3-4) ◽  
pp. 423-426 ◽  
Author(s):  
Kenji Kimura ◽  
Kaoru Nakajima ◽  
Ming Zhao ◽  
Hiroshi Nohira ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
High Resolution ◽  
Depth Profiling ◽  
Chemical States

A Nanodamascene Process to be used as a Building Block for Nanodevices

2006 ◽  
Vol 961 ◽  
Author(s):  
Christian Dubuc ◽  
Jacques Beauvais ◽  
Dominique Drouin
Keyword(s):  
High Resolution ◽  
Building Block ◽  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Filling Material ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Related Process

ABSTRACTWe report a single-electron transistor concept and its related process enabling the fabrication of ultrasmall junction capacitance. The method utilizes a nanodamascene approach where trenches in silicon oxide are covered with a filling material and planarized with chemical mechanical polishing. Single-electron transistors fabricated with this approach were characterized up to 433 K and demonstrated that the nanodamascene process has high resolution, is relatively simple and is highly scalable.

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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