Characterizaton of Pecvd Fluorinated Silicon Oxides and Stabilization of Interaction with Metals

1998 ◽  
Vol 511 ◽  
Author(s):  
Sarah E. Kim ◽  
Christoph Steinbruichel ◽  
Atul Kumar ◽  
H. Bakhru
Keyword(s):  
Dielectric Constant ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Constant Density ◽  
Fluorine Concentration ◽  
Experimental Conditions ◽  
Silicon Oxides ◽  
Fluorinated Silicon Oxide

ABSTRACTFluorinated silicon oxide films were prepared in a plasma enhanced chemical vapor deposition reactor using TEOS, O2, and either C2F6 or NF3. Properties such as deposition rate, film refractive index, dielectric constant, density, and fluorine concentration were investigated as a function of experimental conditions. Based on nuclear reaction analysis (NRA) and Fourier Transform Infrared (FTIR) measurements, no single linear relationship was found between fluorine concentration or film density and dielectric constant. Special attention was paid to the interaction of fluorine with metals. NRA and X-ray photoelectron spectroscopy (XPS) depth profiles showed that fluorine diffuses rapidly through aluminum and piles up at the free surface. The effect of various plasma treatments was investigated to passivate the surface of fluorinated silicon oxide. CF4 - O2 plasma treatment of the fluorinated oxide before aluminum deposition produced significant improvement in inhibiting fluorine diffusion into aluminum without increasing the dielectric constant.

Precipitate Formation and Effects on Electrical and Mechanical Properties of Fluorinated Silicon Oxide

2011 ◽  
Vol 239-242 ◽  
pp. 2163-2169
Author(s):  
Yi Lung Cheng ◽  
Jiung Wu ◽  
Cheng Yang Hsieh
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Film Surface ◽  
Ring Structure ◽  
X Ray ◽  
Current Voltage ◽  
Apparent Shift ◽  
Film Porosity ◽  
Fluorinated Silicon Oxide ◽  
Appreciable Reduction

Precipitates appear on fluorine-doped silicon oxide (SiOF) film when the film surface is exposed to atmospheric air. They are flake-type and hexagonal-shaped and show up rapidly after initiation, and then densely clustered. Energy-dispersive X-ray (EDX) analysis results of the precipitates show that mainly Si & O are detected. From the analysis of Raman spectra, the decreased intensities at about 600 cm-1 and 500 cm-1 post precipitation indicates the reduction of strained low-order ring structure in SiOF film. It is found that the dielectric constant of SiOF films initially increases at exposure to air and is attributable to the absorption of water, and then on the contrary a declining trend of the dielectric constant was observed after precipitation. From the Current-Voltage (I-V) characteristics, there is an apparent shift of the breakdown distribution to lower values of electric field for the SiOF films post-precipitation. Slight but appreciable reduction in hardness could be observed along exposure to air and precipitation. Precipitation on SiOF film at exposure to humid air is accompanied by reconstruction in structure, leading to further increase in film porosity and reduction in film rigidity.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Formation of SiOF Films by APCVD Using TEOS-O3-HF Gas Mixture

2010 ◽  
Vol 9 ◽  
pp. 39-43
Author(s):  
Mauricio Pacio ◽  
H. Juárez ◽  
T. Díaz-Becerril ◽  
E. Rosendo-Andrés ◽  
G. García-Salgado ◽  
...  
Keyword(s):  
Refractive Index ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Deposition Temperature ◽  
Fluorine Atom ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Bonding Structure ◽  
Pressure Chemical ◽  
Fluorinated Silicon Oxide

Fluorinated silicon oxide (SiOF) films have been prepared in a conventional atmospheric pressure chemical vapor deposition (APCVD) reactor. APCVD technique utilizes tetraethoxysilane, ozone and hydrofluoric anhydride as gas sources. SiOF films are deposited by changing the temperature of deposit. Substrate holder was maintained in the temperature range of 200 to 275°C. Films were characterized based on the deposition temperature. Chemical bonding structure of the films was evaluated by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and ellipsometry techniques. FTIR spectra revealed Si-F bond at about 935 cm-1. Incorporation of fluorine has a minimal contribution in the reduction of refractive index of SiOF films from 1.46 to 1.35.Therefore, the main mechanism responsible for this reduction of refractive index is the porosity generated by incorporation of fluorine atom in the SiOF films. Dielectric constant was reduced from 4.2 corresponding to that of SiO2 films, to the values in the range of 3.18 to 3.6 for SiOF films deposited by APCVD technique.

Effect of Fluorine Addition to Plasma-Enhanced Chemical Vapor Deposition Silicon Oxide Film

1996 ◽  
Vol 443 ◽  
Author(s):  
S. W. Lim ◽  
M. Miyata ◽  
T. Naito ◽  
Y. Shimogaki ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Polarization Component ◽  
Low Dielectric ◽  
Step Coverage

AbstractOne solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

Sub-Nanometric Resolution Depth Profiling of Ultrathin Ono Structures

1999 ◽  
Vol 567 ◽  
Author(s):  
C. Radtke ◽  
T.D.M. Salgado ◽  
C. Krug ◽  
J. de Andrade ◽  
I.J.R. Baumvol
Keyword(s):  
Silicon Oxide ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Nuclear Reaction Analysis ◽  
Near Surface ◽  
Atomic Transport ◽  
Thermal Growth ◽  
Nitride Oxide

ABSTRACTUltrathin silicon oxide/nitride/oxide films on silicon prepared by the usual route -thermal growth of an oxide followed by deposition of a nitride layer by chemical vapor deposition, and finally a reoxidation step - were characterized using isotopic substitution of N and O and depth profiling with sub-nanometric resolution. The redistribution of N and O during the oxide/nitride/oxide film processing was investigated by: i) 15N and 18O depth profiling by means of narrow nuclear resonance, and ii) 16O profiling using step-by-step chemical dissolution associated with areal densities determinations by nuclear reaction analysis. It was observed that the reoxidation step, here performed varying temperature and time, induces atomic transport of O and N thus resulting in oxide/nitride/oxide structures which are not stacked layered ones, but rather silicon oxynitride ultrathin films, in which the N concentration presents a maximum in the bulk and is moderate in the near-surface and near-interface regions.

Processing of Silicon Oxides Thin Films by Thermal LPCVD Starting from Teos Mixtures

1996 ◽  
Vol 446 ◽  
Author(s):  
Vassilis Em. Vamvakas ◽  
Dimitris Davazoglou ◽  
Constantin Vahlas
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Thermodynamic Simulation ◽  
Chemical Vapor ◽  
Chemical System ◽  
Molar Ratio ◽  
Silicon Oxides ◽  
Molar Ratios ◽  
Carbon Impurities ◽  
Pressure Chemical

AbstractA thermodynamic simulation is presented of the low pressure chemical vapor deposition (LPCVD) of silicon oxide thin films starting from TEOS and N2O mixtures within the temperature range 700 – 1300K, by minimizing the total Gibbs energy of the C‐H‐N‐O‐Si chemical system. It was found that at temperatures up to 1173K and N2O/TEOS molar ratios up to approximately 7, SiO2 films contain carbon impurities, while above this ratio deposits are carbon free. A corresponding experimental investigation is also presented where the obtained submicronic films are slightly substoichiometric in oxygen. They contain small carbon impurities the concentration of which decreases with the N2O/TEOS molar ratio.

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