Compositional Determinations of Oxide-Nitride-Oxide Stacked Dielectric

1992 ◽  
Vol 268 ◽  
Author(s):  
G.L. Waytena ◽  
J. Hren ◽  
J.K. Weiss ◽  
P. Rez ◽  
G.G. Fountain ◽  
...  
Keyword(s):  
Energy Loss ◽  
Oxide Layer ◽  
Spatial Resolution ◽  
Silicon Oxide ◽  
Nitrogen Concentration ◽  
Light Element ◽  
Nitride Layer ◽  
Electron Holography ◽  
Computer Controlled ◽  
Nitride Oxide

ABSTRACTElectron holography, and high spatial resolution (17Å) computer controlled Parallel Electron Energy Loss Spectrometry (PEELS) were used to probe the structure of and chemical profile across a thin silicon Oxide-Nitride-Oxide (ONO) layered structure of nominal width 10Å-50Å-10Å. We found that the layer widths are on the average 13Å-28Å-18Å, the first oxide layer was discontinuous, and the second oxide layer contained nitrogen. The nitride layer had a silicon to nitrogen concentration ratio of 1.0 ± 0.1. These results show, for the first time, the power of holography in characterizing thin, light element, amorphous layers and the importance of computer controlled parallel energy loss line scans for obtaining analytical information at the highest spatial resolution with minimum dose.

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application

2013 ◽  
Vol 658 ◽  
pp. 120-123
Author(s):  
Sang Youl Lee ◽  
Jae Sub Oh ◽  
Seung Dong Yang ◽  
Ho Jin Yun ◽  
Kwang Seok Jeong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Buffer Layer ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitride Oxide

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

scholarly journals Photo- and electroluminescence of oxide-nitride-oxide-silicon structures for silicon-based optoelectronics

2018 ◽  
Vol 62 (5) ◽  
pp. 546-554
Author(s):  
I. A. Romanov ◽  
L. A. Vlasukova ◽  
F. F. Komarov ◽  
I. N. Parkhomenko ◽  
N. S. Kovalchuk ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Silicon Oxide ◽  
Light Emission ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Radiative Relaxation ◽  
A Charge ◽  
Nitride Oxide

Oxide-nitride-oxide-silicon (SiO2/SiN0.9/SiO2/Si) structures have been fabricated by chemical vapor deposition. The elemental composition and light emission properties of “SiO2/SiN0.9/SiO2/Si” structures have been studied using Rutherford backscattering spectroscopy (RBS), photo- and electroluminescence (Pl, El). The RBS measurements has shown the presence of an intermediate silicon oxynitride layers at the SiO2–SiN0.9 interfaces.It has been shown that the photoluminescence of the SiO2/SiN0.9/SiO2/Si structure is due to the emission of a SiN0.9 layer, and the electroluminescence is attributed to the emission of silicon oxide and oxynitride layers. A broad intense band with a maximum at 1.9 eV dominates the Pl spectrum. This band attributed to the radiative recombination of excited carriers between the band tail states of the SiN0.9 layer. The origin of the less intense Pl band at 2.8 eV is associated with the presence  of nitrogen defects in the silicon nitride.El was excited in the electrolyte-dielectric-semiconductor system. The electric field strength in the SiO2 layers reached 7–8 MV/cm and exceeded this parameter in nitride layer nearly four times. The electrons accelerating in electric field of 7–8 MV/cm could heat up to energies more than 5 eV. It is sufficient for the excitation of luminescence centres in the silicon oxide and oxynitride layers. The SiO2/SiN0.9/SiO2/Si composition El bands with quantum energies of 1.9 and 2.3 eV are related to the presence of silanol groups (Si–OH) and three-coordinated silicon atoms (≡Si•) in the silicon oxide layers. The El band with an energy of 2.7 eV is attributed to the radiative relaxation of silylene (O2=Si:) centers in the silicon oxynitride regions. It is observed the least reduction of this band intensity under the influence of strong electric fields after a charge flow  of 1–3 C/cm2.

scholarly journals Structure and properties of the modified diffusion nitride-oxide surface layer

2021 ◽  
Vol 264 ◽  
pp. 05054
Author(s):  
Kholikul Eshkabilov ◽  
Sherzod Berdiyev
Keyword(s):  
Surface Layer ◽  
Water Vapor ◽  
Oxide Layer ◽  
Nitride Layer ◽  
Phase Changes ◽  
Oxide Surface ◽  
Gas Nitriding ◽  
Modified Surface ◽  
Nitride Oxide ◽  
Nitride Zone

To combine the processes of gas nitriding and oxidation in water vapor, the effects of the atmospheric nitrogen potential in dissociated ammonia on the formation of surface diffusion nitride phases are studied. Modification of the surface nitride layer with oxygen was carried out by oxidation of the nitride zone at the second stage of obtaining an oxycarbonitride layer. The corrosion and wear-resistant properties of the nitride-oxide layer t of the lowest nitride layer are investigated, depending on the phase changes in the nitride layer after oxidation. The distributions of the elements in the nitride-oxide layer are determined, and the nature of the formation of the modified surface layer under the combination of gas nitriding with subsequent oxidation in water vapor is established.

Sub-Nanometric Resolution Depth Profiling of Ultrathin Ono Structures

1999 ◽  
Vol 567 ◽  
Author(s):  
C. Radtke ◽  
T.D.M. Salgado ◽  
C. Krug ◽  
J. de Andrade ◽  
I.J.R. Baumvol
Keyword(s):  
Silicon Oxide ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Silicon Oxynitride ◽  
Nuclear Reaction Analysis ◽  
Near Surface ◽  
Atomic Transport ◽  
Thermal Growth ◽  
Nitride Oxide

ABSTRACTUltrathin silicon oxide/nitride/oxide films on silicon prepared by the usual route -thermal growth of an oxide followed by deposition of a nitride layer by chemical vapor deposition, and finally a reoxidation step - were characterized using isotopic substitution of N and O and depth profiling with sub-nanometric resolution. The redistribution of N and O during the oxide/nitride/oxide film processing was investigated by: i) 15N and 18O depth profiling by means of narrow nuclear resonance, and ii) 16O profiling using step-by-step chemical dissolution associated with areal densities determinations by nuclear reaction analysis. It was observed that the reoxidation step, here performed varying temperature and time, induces atomic transport of O and N thus resulting in oxide/nitride/oxide structures which are not stacked layered ones, but rather silicon oxynitride ultrathin films, in which the N concentration presents a maximum in the bulk and is moderate in the near-surface and near-interface regions.

Development of a Quantitative Nanoscale Thermal Conductivity Profiling Technique by the Removal of Influence Due to Heat Transfer Through the Air

2009 ◽  
Author(s):  
Kyeongtae Kim ◽  
Jaehoon Chung ◽  
Gwangseok Hwang ◽  
Ohmyoung Kwon ◽  
Joon Sik Lee ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Thermal Property ◽  
Oxide Layer ◽  
Spatial Resolution ◽  
Silicon Oxide ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Oxide Layer ◽  
Conductivity Profile

We developed a quantitative thermal property profiling technique that measures the thermal property of the sample from the tip-sample heat transfer only using SThM. The principle of the technique is explained rigorously through a theoretical analysis of the heat transfer phenomena. The spatial resolution of this technique was demonstrated by obtaining the thermal conductivity profile of samples in which a thin silicon oxide layer is sandwiched between single crystal silicon layers. For a sample with 1.4 μm thick silicon oxide layer, its thermal conductivity was quantitatively profiled. However, for a sample with 100 nm thick silicon oxide layer, the obtained profile was not quantitative. From the experimental results the quantitative spatial resolution of this technique is estimated to be around 200 nm. In order to further improve the quantitative spatial resolution of this technique, the tip radius of the completed thermocouple SThM probe should be reduced further.

The Influence of Specimen Thickness in Quantitative Electron Energy Loss Spectroscopy

1980 ◽  
Vol 38 ◽  
pp. 112-113
Author(s):  
Nestor J. Zaluzec
Keyword(s):  
Quantitative Analysis ◽  
Adverse Effects ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Materials Science ◽  
Light Element ◽  
Specimen Thickness ◽  
Element Analysis ◽  
Electron Energy Loss

The application of electron energy loss spectroscopy (EELS) to light element analysis is rapidly becoming an important aspect of the microcharacterization of solids in materials science, however relatively stringent requirements exist on the specimen thickness under which one can obtain EELS data due to the adverse effects of multiple inelastic scattering.1,2 This study was initiated to determine the limitations on quantitative analysis of EELS data due to specimen thickness.

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior
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