Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

1997 ◽  
Vol 70 (14) ◽  
pp. 1790-1792 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
K. L. Moore ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Room Temperature Photoluminescence ◽  
Doped Silicon ◽  
Er Doped

scholarly journals ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

2001 ◽  
Vol 50 (12) ◽  
pp. 2487
Author(s):  
YUAN FANG-CHENG ◽  
RAN GUANG-ZHAO ◽  
CHAN YUAN ◽  
ZHANG BO-RUI ◽  
QIAO YONG-PING ◽  
...  
Keyword(s):  
Oxide Film ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Silicon Oxide Film ◽  
Doped Silicon ◽  
Er Doped

Er-Doped Porous Silicon Led For Integrated Optoelectronics

1997 ◽  
Vol 486 ◽  
Author(s):  
L. Tsybeskov ◽  
G. F. Grom ◽  
K. D. Hirschman ◽  
H. A. Lopez ◽  
S. Chan ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Light Emitting Diode ◽  
Inert Atmosphere ◽  
Light Emitting ◽  
Doped Silicon ◽  
Recombination Centers ◽  
Er Doped

AbstractPorous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600–950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ∼1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-bandedgerecombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ∼1.5 μm was demonstrated.

Waveguiding and 1.54 μm Er3+ Photoluminescence Properties of Erbium Doped Silicon Rich Silicon Oxide

1999 ◽  
Vol 597 ◽  
Author(s):  
Se-Young Seo ◽  
Hak-Seung Han ◽  
Jung H. Shin
Keyword(s):  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Excitation Mechanisms ◽  
Si Content ◽  
Er Doped ◽  
Resonance Plasma ◽  
Nanocrystalline Si

AbstractThe waveguiding and 1.54 μm Er3+ photoluminescent properties of Er doped silicon-rich silicon oxide (SRSO) are investigated. Erbium-doped SRSO films, which consist of nanocrystalline Si clusters embedded inside Si0 2 matrix, were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium. The excess Si content of the SRSO films ranged from 0 to 10 at. %, and Er content ranged from 0.01 to 0.3 at. %. After deposition, films were rapid thermal annealed at temperatures between 750 and 1150°C for durations ranging from 2 to 20 min. to precipitate silicon nanoclusters. All films show strong room temperature 1.54 μm Er3+ photoluminescence. The luminescence lifetimes that can be > 6 msec. The refractive indices of the SRSO films range from 1.48 to 2.47, increasing with increasing excess Si content. Thus, waveguides can be formed easily by depositing erbium doped SRSO films on 1 μm thick SiO2 films. Furthermore, carrier-induced de-excitation mechanisms of excited erbium atoms in SRSO are nearly completely suppressed in such SRSO films, indicating that population inversion of Er3+ ions by carrier-mediated excitation is possible.

Exciton-mediated excitation of Er3+ in Erbium-doped silicon rich silicon oxide

2000 ◽  
Vol 638 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin
Keyword(s):  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Time Resolved ◽  
Modeling And Analysis ◽  
Visible Luminescence ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Er Doped

AbstractExciton-mediated excitation of Er3+ in erbium doped silicon rich silicon oxide (SRSO) is investigated. Er-doped SRSO films were fabricated by electron cyclotron-resonance plasmaenhanced chemical vapor deposition of Er-doped SiOx (x < 2) using SiH4 and O2 as source gases and co-sputtering of Er, followed by an anneal at 950 °C. Very weak visible luminescence from Si nanocluster relative to Er3+ luminescence were observed, indicating a very efficient excitation of Er3+ ions by Si nanoclusters. From detailed modeling and analysis of time-resolved Er3+ luminescence as the excitation duration and excitation power, we conclude that exciton-erbium coupling is dominant over exciton-nanocluster. The results are consistent with the proposal that the luminescent Er3+ ions are located predominantly in the SiO2 layer.

1.54 μm Electroluminescence from Erbium Doped Gallium Phosphide Diodes

1996 ◽  
Vol 422 ◽  
Author(s):  
G. M. Ford ◽  
B. W. Wessels
Keyword(s):  
Gallium Phosphide ◽  
Room Temperature ◽  
Radiative Decay ◽  
Forward Bias ◽  
Temperature Characteristic ◽  
Excitation Power ◽  
Optically Active ◽  
Erbium Doped ◽  
Current Densities ◽  
Er Doped

AbstractEr-doped GaP diodes that exhibit strong room temperature characteristic 4f-shell luminescence under forward bias have been fabricated. The output of the diode increases linearly with current for low current densities but eventually saturates. The radiative decay lifetime is 2.6 msec and is independent of current. It is proposed that the observed intensity dependence on excitation power results from saturation of the optically active Er3+ centers. Some diodes showed a superlinear dependence, with a threshold of about 2 A/cm2.

Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS

Nanoscale ◽  
2013 ◽  
Vol 5 (20) ◽  
pp. 9963 ◽  
Author(s):  
Alberto Eljarrat ◽  
Lluís López-Conesa ◽  
José Manuel Rebled ◽  
Yonder Berencén ◽  
Joan Manel Ramírez ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Silicon Nanoclusters ◽  
Doped Silicon ◽  
Er Doped ◽  
Compositional Properties
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