Er-Doped Porous Silicon Led For Integrated Optoelectronics

1997 ◽  
Vol 486 ◽  
Author(s):  
L. Tsybeskov ◽  
G. F. Grom ◽  
K. D. Hirschman ◽  
H. A. Lopez ◽  
S. Chan ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Light Emitting Diode ◽  
Inert Atmosphere ◽  
Light Emitting ◽  
Doped Silicon ◽  
Recombination Centers ◽  
Er Doped

AbstractPorous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600–950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ∼1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-bandedgerecombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ∼1.5 μm was demonstrated.

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Stimmer ◽  
A. Reittinger ◽  
G. Abstreiter ◽  
H. Holzbrecher ◽  
Ch. Buchal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Systematic Study ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Conditions ◽  
Light Emitting ◽  
Doped Silicon

AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

Optical Studies of Electroluminescent Structures from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
J. F. Harvey ◽  
R. A. Lux ◽  
D. C. Morton ◽  
G. F. McLane ◽  
R. Tsu
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Spectral Peak ◽  
Electrical Excitation ◽  
Silicon Structure ◽  
Electrical Measurements ◽  
Optical Studies ◽  
Light Emitting

ABSTRACTTwo components of the electroluminescence (EL) from porous silicon light emitting diode (LED) devices have been observed. A slower component and a faster component have been identified. The slower component has a spectral peak shifted to the red from the corresponding photoluminescence (PL) spectrum. The faster component has a spectral peak well in the infrared (IR). Optical and electrical measurements of these two components are discussed. The temperature dependence of the two EL components are presented and contrasted. Our measurements demonstrate that the two EL components and the PL result from recombination in different parts of the porous silicon structure. As the temperature is reduced below room temperature the slower EL exhibits a decrease in intensity at relatively high temperatures, suggesting a freeze out of electrical carriers due to quantum confinement, resulting in a much reduced electrical excitation of the EL.

Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

1997 ◽  
Vol 70 (14) ◽  
pp. 1790-1792 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
K. L. Moore ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Room Temperature Photoluminescence ◽  
Doped Silicon ◽  
Er Doped

scholarly journals ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

2001 ◽  
Vol 50 (12) ◽  
pp. 2487
Author(s):  
YUAN FANG-CHENG ◽  
RAN GUANG-ZHAO ◽  
CHAN YUAN ◽  
ZHANG BO-RUI ◽  
QIAO YONG-PING ◽  
...  
Keyword(s):  
Oxide Film ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Silicon Oxide Film ◽  
Doped Silicon ◽  
Er Doped

Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

1994 ◽  
Vol 64 (21) ◽  
pp. 2842-2844 ◽  
Author(s):  
B. Zheng ◽  
J. Michel ◽  
F. Y. G. Ren ◽  
L. C. Kimerling ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Sharp Line ◽  
Light Emitting ◽  
Erbium Doped ◽  
Doped Silicon

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

2021 ◽  
Vol 118 (2) ◽  
pp. 021102
Author(s):  
Dong-Pyo Han ◽  
Ryoto Fujiki ◽  
Ryo Takahashi ◽  
Yusuke Ueshima ◽  
Shintaro Ueda ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Emitting ◽  
Recombination Centers

scholarly journals Increased Plant Quality, Greenhouse Productivity and Energy Efficiency with Broad-Spectrum LED Systems: A Case Study for Thyme (Thymus vulgaris L.)

Plants ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 960
Author(s):  
Jenny Manuela Tabbert ◽  
Hartwig Schulz ◽  
Andrea Krähmer
Keyword(s):  
Broad Spectrum ◽  
Energy Savings ◽  
Light Emitting Diode ◽  
Thymus Vulgaris ◽  
Light Spectrum ◽  
Light Emitting ◽  
Biomass Yields ◽  
Lighting Systems

A light-emitting diode (LED) system covering plant-receptive wavebands from ultraviolet to far-red radiation (360 to 760 nm, “white” light spectrum) was investigated for greenhouse productions of Thymus vulgaris L. Biomass yields and amounts of terpenoids were examined, and the lights’ productivity and electrical efficiency were determined. All results were compared to two conventionally used light fixture types (high-pressure sodium lamps (HPS) and fluorescent lights (FL)) under naturally low irradiation conditions during fall and winter in Berlin, Germany. Under LED, development of Thymus vulgaris L. was highly accelerated resulting in distinct fresh yield increases per square meter by 43% and 82.4% compared to HPS and FL, respectively. Dry yields per square meter also increased by 43.1% and 88.6% under LED compared to the HPS and FL lighting systems. While composition of terpenoids remained unaffected, their quantity per gram of leaf dry matter significantly increased under LED and HPS as compared to FL. Further, the power consumption calculations revealed energy savings of 31.3% and 20.1% for LED and FL, respectively, compared to HPS. In conclusion, the implementation of a broad-spectrum LED system has tremendous potential for increasing quantity and quality of Thymus vulgaris L. during naturally insufficient light conditions while significantly reducing energy consumption.

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