scholarly journals ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

2001 ◽  
Vol 50 (12) ◽  
pp. 2487
Author(s):  
YUAN FANG-CHENG ◽  
RAN GUANG-ZHAO ◽  
CHAN YUAN ◽  
ZHANG BO-RUI ◽  
QIAO YONG-PING ◽  
...  
Keyword(s):  
Oxide Film ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Silicon Oxide Film ◽  
Doped Silicon ◽  
Er Doped

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

1997 ◽  
Vol 70 (14) ◽  
pp. 1790-1792 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
K. L. Moore ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Room Temperature Photoluminescence ◽  
Doped Silicon ◽  
Er Doped

Effect of deposition temperature on the bonding configurations and properties of fluorine doped silicon oxide film

2011 ◽  
Vol 520 (1) ◽  
pp. 35-40 ◽  
Author(s):  
Wei-Lun Lu ◽  
Ting-Wei Kuo ◽  
Chun-Hsien Huang ◽  
Na-Fu Wang ◽  
Yu-Zen Tsai ◽  
...  
Keyword(s):  
Oxide Film ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Silicon Oxide Film ◽  
Doped Silicon

Copper drift in methyl-doped silicon oxide film

2002 ◽  
Vol 20 (5) ◽  
pp. 1987 ◽  
Author(s):  
Hao Cui ◽  
Ishwara B. Bhat ◽  
Shyam P. Murarka ◽  
Hongqiang Lu ◽  
Wei-Jen Hsia ◽  
...  
Keyword(s):  
Oxide Film ◽  
Silicon Oxide ◽  
Silicon Oxide Film ◽  
Doped Silicon

Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization

2004 ◽  
Vol 83 (1) ◽  
pp. 150-157 ◽  
Author(s):  
Y.L. Cheng ◽  
Y.L. Wang ◽  
C.P. Liu ◽  
Y.L. Wu ◽  
K.Y. Lo ◽  
...  
Keyword(s):  
Oxide Film ◽  
Silicon Oxide ◽  
Silicon Oxide Film ◽  
Doped Silicon
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