Effect of hydrogenation on room-temperature 1.54 μm Er3+ photoluminescent properties of erbium-doped silicon-rich silicon oxide

1998 ◽  
Vol 73 (25) ◽  
pp. 3647-3649 ◽  
Author(s):  
Jung H. Shin ◽  
Se-young Seo ◽  
Seok-Ju Lee
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Erbium Doped ◽  
Doped Silicon

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide

2000 ◽  
Vol 88 (4) ◽  
pp. 2160-2162 ◽  
Author(s):  
Hak-Seung Han ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
Dong-Su Kim
Keyword(s):  
Silicon Oxide ◽  
Erbium Doped ◽  
Doped Silicon

Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature

2006 ◽  
Author(s):  
Keisuke Yamaoka ◽  
Hideaki Kato ◽  
Daisuke Tsukiyama ◽  
Yuji Yoshizako ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Stable ◽  
Stable Carbon ◽  
Carbon Doped ◽  
Doped Silicon

scholarly journals Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide

2012 ◽  
Vol 132 (12) ◽  
pp. 3103-3112 ◽  
Author(s):  
Miraj Shah ◽  
Maciej Wojdak ◽  
Anthony J. Kenyon ◽  
Matthew P. Halsall ◽  
Hang Li ◽  
...  
Keyword(s):  
Rate Equation ◽  
Silicon Oxide ◽  
Equation Modelling ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Luminescence Dynamics

SEM-mapped micro-photoluminescence studies of highly luminescent micro-clusters in erbium-doped silicon-rich silicon oxide

2011 ◽  
Vol 131 (1) ◽  
pp. 72-77 ◽  
Author(s):  
David A. Stanley ◽  
Hossein Alizadeh ◽  
Amr Helmy ◽  
Nazir P. Kherani ◽  
Li Qian ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Photoluminescence Studies

Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

1997 ◽  
Vol 70 (14) ◽  
pp. 1790-1792 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
K. L. Moore ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Room Temperature Photoluminescence ◽  
Doped Silicon ◽  
Er Doped
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