Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS

Nanoscale ◽  
2013 ◽  
Vol 5 (20) ◽  
pp. 9963 ◽  
Author(s):  
Alberto Eljarrat ◽  
Lluís López-Conesa ◽  
José Manuel Rebled ◽  
Yonder Berencén ◽  
Joan Manel Ramírez ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Silicon Nanoclusters ◽  
Doped Silicon ◽  
Er Doped ◽  
Compositional Properties

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Effects of Heat Treatment on Luminescence of Er-Doped Silicon-Rich SiO 2 Prepared by rf Co-sputtering

2004 ◽  
Vol 21 (7) ◽  
pp. 1333-1336 ◽  
Author(s):  
Zhang Chang-Sheng ◽  
Xiao Hai-Bo ◽  
Chen Zhi-Jun ◽  
Cheng Xin-Li ◽  
Zhang Feng
Keyword(s):  
Heat Treatment ◽  
Doped Silicon ◽  
Er Doped

Er3+Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Atmosphere ◽  
Doped Silicon ◽  
Er Doped

Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties

2007 ◽  
Vol 91 (9) ◽  
pp. 093133 ◽  
Author(s):  
C. T. Huang ◽  
C. L. Hsin ◽  
K. W. Huang ◽  
C. Y. Lee ◽  
P. H. Yeh ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanowires ◽  
Light Emitting ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Doped Silicon ◽  
Er Doped

Luminescence of Er-doped silicon oxide–zirconia thin films

2009 ◽  
Vol 129 (7) ◽  
pp. 696-703 ◽  
Author(s):  
Carlos Rozo ◽  
Luis F. Fonseca ◽  
Daniel Jaque ◽  
José García Solé
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Doped Silicon ◽  
Er Doped

Fabrication and characterization of Er doped silicon-rich silicon nitride(SRSN) micro-disks

2008 ◽  
Author(s):  
Jee Soo Chang ◽  
Myung-Ki Kim ◽  
Yong-Hee Lee ◽  
Jung H. Shin ◽  
Gun Yong Sung
Keyword(s):  
Silicon Nitride ◽  
Doped Silicon ◽  
Fabrication And Characterization ◽  
Er Doped

Correlation of efficient luminescence with crystal structures of y-Er2Si2O7 and α-Er2Si2O7 in Er-doped silicon oxide films

2019 ◽  
Vol 54 (19) ◽  
pp. 12668-12675 ◽  
Author(s):  
Yuhan Gao ◽  
Qianyu Fu ◽  
Hao Shen ◽  
Dongsheng Li ◽  
Deren Yang
Keyword(s):  
Crystal Structures ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Doped Silicon ◽  
Er Doped

scholarly journals Palladium selenide as a broadband saturable absorber for ultra-fast photonics

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2557-2567 ◽  
Author(s):  
Huanian Zhang ◽  
Pengfei Ma ◽  
Mingxiao Zhu ◽  
Wenfei Zhang ◽  
Guomei Wang ◽  
...  
Keyword(s):  
Pulse Width ◽  
Photonic Devices ◽  
Average Output ◽  
Electronic Band ◽  
Central Wavelength ◽  
Saturable Absorbers ◽  
Application Potential ◽  
Maximum Average Output Power ◽  
Promising Application ◽  
Er Doped

AbstractAir-stable broadband saturable absorbers (SAs) exhibit a promising application potential, and their preparations are also full of challenges. Palladium selenide (PdSe2), as a novel two-dimensional (2D) layered material, exhibits competitive optical properties including wide tunable bandgap, unique pentagonal atomic structure, excellent air stability, and so on, which are significant in designing air-stable broadband SAs. In our work, theoretical calculation of the electronic band structures and bandgap characteristics of PdSe2 are studied first. Additionally, PdSe2 nanosheets are synthesized and used for designing broadband SAs. Based on the PdSe2 SA, ultrafast mode-locked operations in 1- and 1.5-μm spectral regions are generated successfully. For the mode-locked Er-doped operations, the central wavelength, pulse width, and pulse repetition rate are 1561.77 nm, 323.7 fs, and 20.37 MHz, respectively. Meanwhile, in all normal dispersion regions, mode-locked Yb-doped fiber laser with 767.7-ps pulse width and 15.6-mW maximum average output power is also generated successfully. Our results fully reveal the capacity of PdSe2 as a broadband SA and provide new opportunities for designing air-stable broadband ultra-fast photonic devices.

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