1.54 μm Electroluminescence from Erbium Doped Gallium Phosphide Diodes

1996 ◽  
Vol 422 ◽  
Author(s):  
G. M. Ford ◽  
B. W. Wessels
Keyword(s):  
Gallium Phosphide ◽  
Room Temperature ◽  
Radiative Decay ◽  
Forward Bias ◽  
Temperature Characteristic ◽  
Excitation Power ◽  
Optically Active ◽  
Erbium Doped ◽  
Current Densities ◽  
Er Doped

AbstractEr-doped GaP diodes that exhibit strong room temperature characteristic 4f-shell luminescence under forward bias have been fabricated. The output of the diode increases linearly with current for low current densities but eventually saturates. The radiative decay lifetime is 2.6 msec and is independent of current. It is proposed that the observed intensity dependence on excitation power results from saturation of the optically active Er3+ centers. Some diodes showed a superlinear dependence, with a threshold of about 2 A/cm2.

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Light Emission From Erbium Doped Si1-x XGe1Heterostructures

1998 ◽  
Vol 533 ◽  
Author(s):  
J H Evans-Freeman ◽  
A T Naveed ◽  
M Q Huda ◽  
A R eaker ◽  
D C oughton ◽  
...  
Keyword(s):  
Quantum Well ◽  
Concentration Profile ◽  
Light Emission ◽  
Forward Bias ◽  
Silicon Layer ◽  
Spatial Location ◽  
Detailed Mechanism ◽  
Erbium Doped ◽  
Er Doped

AbstractUHVCVD-grown SiO.s 7Ge0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54ýim have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.

Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Atsushi Koizumi ◽  
Kentaro Inoue ◽  
Akira Urakami ◽  
Taketoshi Yoshikane ◽  
...  
Keyword(s):  
Cross Section ◽  
Vapor Phase ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Excitation Cross Section ◽  
Forward Bias ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Current Densities

ABSTRACTRoom-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). Under forward bias, characteristic emission due to a luminescence center consisting of Er coordinated by O and As was clearly observed at room temperature, while the Er-related EL was undetectable under reverse bias. At lower current densities, the EL intensity increased linearly with the current density. Subsequently, the intensity exhibited a tendency to saturate at higher current densities. By analyzing the behavior with a fitting according to rate equations, the excitation cross section of Er ions due to current injection was determined to be approximately 10-15 cm2, which is by five orders in magnitude larger than that for optical excitation in Er-doped fiber amplifiers (10-20∼10-21 cm2).

On the Electrical and Photoluminescence Properties of Erbium Doped ZnO Thin Film

2012 ◽  
Vol 1471 ◽  
Author(s):  
Liang-Chiun Chao ◽  
Chung-Chi Liau ◽  
Wan-Chun Chang
Keyword(s):  
Carrier Concentration ◽  
Room Temperature ◽  
Ion Beam ◽  
Processing Conditions ◽  
Photoluminescence Properties ◽  
Dual Beam ◽  
Erbium Doped ◽  
Doped Zno ◽  
Er Doped ◽  
Ion Beam Sputter Deposition

ABSTRACTEr doped ZnO (Er:ZnO) thin films with Er concentration from 0.1 to 3.6 at. % were prepared by dual beam ion beam sputter deposition at room temperature. Experimental results show that as Er concentration increases from 0.1 to 1.1 at. %, the resistivity of the as-deposited Er:ZnO film decreases from 560 Ω·cm to a minimum of 0.23 Ω·cm, while further increasing Er concentration to 3.6 at. % results in increase of the resistivity to 4.2 kΩ·cm. The as-deposited Er:ZnO with Er concentration of 1.1 at.% also exhibits the highest carrier concentration of 2.3×1019 cm-3. None of the as-deposited Er:ZnO films show 1.5 μm emission without post-growth annealing. Er:ZnO film with Er concentration at 0.5~1.1 at.% shows the strongest 1.5 μm emission after annealing at 700 ~ 900°C, while all the Er:ZnO film becomes semi-insulating after annealing. The discrepancy between the processing conditions for optimized carrier concentration and optimized optically activated Er ions may due to the formation of the pseudo-octahedral structure after annealing that favors the 1.5 μm emission.

Exciton-mediated excitation of Er3+ in Erbium-doped silicon rich silicon oxide

2000 ◽  
Vol 638 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin
Keyword(s):  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Time Resolved ◽  
Modeling And Analysis ◽  
Visible Luminescence ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Er Doped

AbstractExciton-mediated excitation of Er3+ in erbium doped silicon rich silicon oxide (SRSO) is investigated. Er-doped SRSO films were fabricated by electron cyclotron-resonance plasmaenhanced chemical vapor deposition of Er-doped SiOx (x < 2) using SiH4 and O2 as source gases and co-sputtering of Er, followed by an anneal at 950 °C. Very weak visible luminescence from Si nanocluster relative to Er3+ luminescence were observed, indicating a very efficient excitation of Er3+ ions by Si nanoclusters. From detailed modeling and analysis of time-resolved Er3+ luminescence as the excitation duration and excitation power, we conclude that exciton-erbium coupling is dominant over exciton-nanocluster. The results are consistent with the proposal that the luminescent Er3+ ions are located predominantly in the SiO2 layer.

Microscopic Structure of Er-Related Optically Active Centers in Si

2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz
Keyword(s):  
Ground State ◽  
Photoluminescence Spectrum ◽  
Zeeman Effect ◽  
Optically Active ◽  
Single Type ◽  
Active Centers ◽  
Mbe Growth ◽  
Spectral Components ◽  
Er Doped ◽  
Successful Observation

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

scholarly journals Temperature-Dependent Stimulated Emission Cross-Section in Nd3+:YLF Crystal

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 431
Author(s):  
Giorgio Turri ◽  
Scott Webster ◽  
Michael Bass ◽  
Alessandra Toncelli
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Room Temperature ◽  
Radiative Decay ◽  
Emission Cross Section ◽  
Spectroscopic Properties ◽  
Stimulated Emission ◽  
Different Temperatures ◽  
Stimulated Emission Cross Section ◽  
Semi Empirical

Spectroscopic properties of neodymium-doped yttrium lithium fluoride were measured at different temperatures from 35 K to 350 K in specimens with 1 at% Nd3+ concentration. The absorption spectrum was measured at room temperature from 400 to 900 nm. The decay dynamics of the 4F3/2 multiplet was investigated by measuring the fluorescence lifetime as a function of the sample temperature, and the radiative decay time was derived by extrapolation to 0 K. The stimulated-emission cross-sections of the transitions from the 4F3/2 to the 4I9/2, 4I11/2, and 4I13/2 levels were obtained from the fluorescence spectrum measured at different temperatures, using the Aull–Jenssen technique. The results show consistency with most results previously published at room temperature, extending them over a broader range of temperatures. A semi-empirical formula for the magnitude of the stimulated-emission cross-section as a function of temperature in the 250 K to 350 K temperature range, is presented for the most intense transitions to the 4I11/2 and 4I13/2 levels.

Correlation of Electrical, Structural, and Optical Properties of Erbium In Silicon

1993 ◽  
Vol 301 ◽  
Author(s):  
J. L. Benton ◽  
D. J. Eaglesham ◽  
M. Almonte ◽  
P. H. Citrin ◽  
M. A. Marcus ◽  
...  
Keyword(s):  
Root Function ◽  
Free Exciton ◽  
Excitation Power ◽  
Optically Active ◽  
Photoluminescence Intensity ◽  
Square Root ◽  
Structural And Optical Properties ◽  
X Ray ◽  
X Ray Absorption ◽  
Donor Activity

ABSTRACTAn understanding of the electrical, structural, and optical properites of Er in Si is necessary to evaluate this system as an opto-electronic material. Extended x-ray absorption fine structure, EXAFS, measurements of Er-implanted Si show that the optically active impurity complex is Er surrounded by an O cage of 6 atoms. The Er photoluminescence intensity is a square root function of excitation power, while the free exciton intensity increases linearly. The square root dependence of the 1.54μm-intensity is independent of measurement temperature and independent of co-implanted species. Ion-implantation of Er in Si introduces donor activity, but spreading resistance carrier concentration profiles indicate that these donors do not effect the optical activity of the Er.

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

1998 ◽  
Vol 227-230 ◽  
pp. 1164-1167 ◽  
Author(s):  
Oleg Gusev ◽  
Mikhail Bresler ◽  
Alexey Kuznetsov ◽  
Vera Kudoyarova ◽  
Petr Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Er Doped ◽  
Hydrogenated Amorphous

Room-temperature electroluminescence from erbium-doped porous silicon

1999 ◽  
Vol 75 (25) ◽  
pp. 3989-3991 ◽  
Author(s):  
Herman A. Lopez ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Erbium Doped
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