A Study of Damage in Silicon Created By and P+ Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
Fang Ziwei ◽  
Lin Chenglu ◽  
Tsou Shihchang
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Incident Energy ◽  
Room Temperature ◽  
Concentration Profiles ◽  
Molecular Fragments ◽  
Multiple Collision ◽  
Annealing Behavior ◽  
Intermediate Dose

ABSTRACTThe damage and annealing behavior of <100> Si implanted at room temperature by and P+ at different energies (5-600KeV) and intermediate dose (∼1014/cm2) has been investigated. Experimental results show that the damage created by implantation is always greater than that of P+ implantation. The ratio of total displaced atoms of the target cuased by molecular and atomic implantation, ND(mol)d/ND(atom) reached a maximal value at 100KeV () and 50KeV (P+) after rapid thermal annealing, the carrier concentration profiles measured by spreading resistance measurements are also different for the and P+ implanted samples. We attribute essentially this phenomenon to the displacement spike, but the multiple collision effect and the interaction between two molecular fragments should be considered while the incident energy is high.

Rapid Thermal Annealing of Se-Implanted Gallium Arsenide

1987 ◽  
Vol 92 ◽  
Author(s):  
T. Inada ◽  
K. Miyamoto ◽  
A. Nishida
Keyword(s):  
Gallium Arsenide ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Doping Profile ◽  
Lec Gaas

Rapid thermal annealing by using a graphite strip heater has been employed to activate Se atoms implanted in either In-doped or undoped LEC GaAs. Doping profile measurements have shown that highly doped n-type layers with the maximum carrier concentration of 1.2E19/cm3 are formed in the In-doped GaAs implanted with 100keV Se ions at room temperature after rapid thermal annealing at 1000°C for 10 sec. Residual defects existing in Se-implanted layers have been examined. The results show that the introduction of dislocations into Se-implanted layers during post-implant annealing is minimized in the In-doped GaAs samples treated by rapid thermal annealing.

Rapid Thermal Annealing of Si-Implanted GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
D.H. Rosenblatt ◽  
W.R. Hitchens ◽  
S. Shatas ◽  
A. Gat ◽  
D.A. Betts
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Doping Level ◽  
Electrical Activation ◽  
Concentration Profiles ◽  
Conventional Furnace ◽  
Van Der Pauw ◽  
Cr Doping ◽  
Anneal Temperature

ABSTRACTHeatpulse rapid thermal annealing was used to activate Si implants of 3.5 × 1012cm−2 at 100 keV and 1.0 × 1013 and 1.0 × 1014cm−2 at 200 keV into semi-insulating GaAs. The effects of Si3N4 encapsulation, anneal temperature and time, and substrate Cr-doping level were investigated. The annealed samples were characterized with C-V, Van der Pauw, differential Hall, and SIMS measurements. Conventional furnace anneals were carried out for comparison, and in all cases, Heatpulse anneals produced sharper carrier concentration profiles. 84% electrical activation was obtained for the 200 keV, 1.0 × 1013 cm−2 implant after a 950°C, 5 sec. Heatpulse anneal. Capped Heatpulse anneals produced less Cr depletion from the implanted region than furnace anneals.

scholarly journals Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

2019 ◽  
Vol 14 (1) ◽  
pp. 53-63 ◽  
Author(s):  
M. S. Bashar ◽  
Rummana Matin ◽  
Munira Sultana ◽  
Ayesha Siddika ◽  
M. Rahaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Localized States ◽  
Stoichiometric Ratio ◽  
Deposited Films

AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

A Study of Se+ Implants into Encapsulated GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
R. Gwilliam ◽  
M. A. Shahid ◽  
B. J. Sealy
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Residual Damage ◽  
Lower Mobility ◽  
Interface Strain

ABSTRACTThe effects of implanting Se+ ions through Si N4 layers have been compared with implants into uncapped GaAs. Through nitride implants have a higher residual damage, lower carrier concentration and lower mobility following rapid thermal annealing between 850 and 975 °C. The effect is believed to be due to the interface strain between the encapsulant and the amorphous GaAs.

Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature

2006 ◽  
Vol 100 (11) ◽  
pp. 113515 ◽  
Author(s):  
Jong Hoon Kim ◽  
Byung Du Ahn ◽  
Choong Hee Lee ◽  
Kyung Ah Jeon ◽  
Hong Seong Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Doped Zno

scholarly journals Effects of rapid thermal annealing on the properties of room-temperature oxygenated DC sputtered zinc thin films for CZTS solar cells application

2021 ◽  
Vol 47 (2) ◽  
pp. 637-647
Author(s):  
Emmanuel R Ollotu ◽  
Nuru R Mlyuka ◽  
Margaret E Samiji
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Near Infrared ◽  
Hall Effect Measurement ◽  
Window Layer ◽  
Zno Films

This work investigated the potential to achieve zinc oxide (ZnO) films for Cu2ZnSnS4 (CZTS) solar cells window layer at controlled annealing conditions as a potential approach to address elemental inter-diffusion in CZTS solar cells. This involved rapid thermal annealing (RTA) of room-temperature oxygenated DC sputtered zinc thin films in an ambient of nitrogen gas at different temperatures. Structural, morphological, optical, and electrical properties of these films were determined by X-ray diffractometer, Scanning Electron Microscopy, Ultraviolet-visible-near infrared spectrophotometer, and Hall Effect measurement, respectively. ZnO phases were observed after annealing the films over 150 °C. The films’ grains sizes improved with increasing RTA temperature. An exponential decrease in these films’ resistivity was observed with increasing RTA temperature attaining the lowest value at 300 °C. The bandgap and average solar transmittance of the films increased with increasing RTA temperature achieving values that are potential for applications in CZTS solar cells window layer at RTA temperatures beyond 200 °C. Keywords: Sputtering; Rapid thermal annealing; Zinc oxide; Structural; Opt-electrical

Defect Characterization Of InAs Wafers Using Positron Lifetime Spectroscopy

1996 ◽  
Vol 442 ◽  
Author(s):  
J. Mahony ◽  
P. Mascher
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Positron Lifetime ◽  
Defect Characterization ◽  
Lifetime Measurements ◽  
Positron Lifetime Spectroscopy ◽  
Heavily Doped

AbstractPositron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×10 16 cm-3. Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps, characteristic of divacancies. The concentration of these defects is also close to 1017 cm−3. Both types of defects are stable for rapid thermal annealing up to 850 °C, and both defects are neutral. The formation of the divacancytype defects may be correlated with a discrepancy between the carrier concentration and the total

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