Rapid Thermal Annealing of Si-Implanted GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
D.H. Rosenblatt ◽  
W.R. Hitchens ◽  
S. Shatas ◽  
A. Gat ◽  
D.A. Betts
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Doping Level ◽  
Electrical Activation ◽  
Concentration Profiles ◽  
Conventional Furnace ◽  
Van Der Pauw ◽  
Cr Doping ◽  
Anneal Temperature

ABSTRACTHeatpulse rapid thermal annealing was used to activate Si implants of 3.5 × 1012cm−2 at 100 keV and 1.0 × 1013 and 1.0 × 1014cm−2 at 200 keV into semi-insulating GaAs. The effects of Si3N4 encapsulation, anneal temperature and time, and substrate Cr-doping level were investigated. The annealed samples were characterized with C-V, Van der Pauw, differential Hall, and SIMS measurements. Conventional furnace anneals were carried out for comparison, and in all cases, Heatpulse anneals produced sharper carrier concentration profiles. 84% electrical activation was obtained for the 200 keV, 1.0 × 1013 cm−2 implant after a 950°C, 5 sec. Heatpulse anneal. Capped Heatpulse anneals produced less Cr depletion from the implanted region than furnace anneals.

A Study of Damage in Silicon Created By and P+ Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
Fang Ziwei ◽  
Lin Chenglu ◽  
Tsou Shihchang
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Incident Energy ◽  
Room Temperature ◽  
Concentration Profiles ◽  
Molecular Fragments ◽  
Multiple Collision ◽  
Annealing Behavior ◽  
Intermediate Dose

ABSTRACTThe damage and annealing behavior of <100> Si implanted at room temperature by and P+ at different energies (5-600KeV) and intermediate dose (∼1014/cm2) has been investigated. Experimental results show that the damage created by implantation is always greater than that of P+ implantation. The ratio of total displaced atoms of the target cuased by molecular and atomic implantation, ND(mol)d/ND(atom) reached a maximal value at 100KeV () and 50KeV (P+) after rapid thermal annealing, the carrier concentration profiles measured by spreading resistance measurements are also different for the and P+ implanted samples. We attribute essentially this phenomenon to the displacement spike, but the multiple collision effect and the interaction between two molecular fragments should be considered while the incident energy is high.

Ir Radiation Transient Annealing of Silicon Implanted Si Gallium Arsenide

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Ezis ◽  
Y. K. Yeo ◽  
Y. S. Park
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Low Dose ◽  
Drift Mobility ◽  
Electrical Activation ◽  
Concentration Profiles ◽  
Ir Radiation ◽  
Activation Efficiency ◽  
Device Applications ◽  
Van Der Pauw

ABSTRACTThe electrical properties of IR radiation transient annealed Si implanted semi-insulating GaAs are presented for 100 keV ion doses from 3 × 1012 to 3 × 1014 cm−2. For wafers implanted with 3 × 1012 cm−2 doses, suitable for FET channel layers, carrier concentration and drift mobility profiles were determined from C-V and transconductance measurements on fat FET structures. Optimum electrical activation and carrier concentration profiles were obtained for peak pulse temperatures of 930–950°C. Van der Pauw measurements were made on substrates implanted with Si doses ≥ 1 × 1013 cm−2 to determine sheet carrier concentration and Hall mobility. The peak pulse temperature required to give optimum activation efficiency is found to increase with dose. The results presented here demonstrate that undoped substrates are preferable to Cr-doped substrates for low dose device applications.

Rapid Thermal Annealing of Ion Implanted GaAs and InP

1983 ◽  
Vol 23 ◽  
Author(s):  
K.V. Vaidyanathan ◽  
H.L. Dunlap
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Intensity ◽  
Annealing Process ◽  
Electrical Activation ◽  
High Fluence ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Ion Implanted

ABSTRACTThis paper discusses the properties of high intensity lamp-annealed silicon or beryllium-implanted GaAs and InP samples. We find this annealing process can result in efficient activation of dopants. Conventional furnace annealing at the same temperature does not result in increased electrical activation of the dopants. High fluence silicon implants can be activated in anneal times as short as 2 seconds, while low fluence silicon implants require more extended annealing. Activation of low fluence implants in GaAs depends strongly on the properties of the bulk semiinsulating material.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing

1992 ◽  
Vol 39 (1) ◽  
pp. 176-183 ◽  
Author(s):  
J.-L. Lee ◽  
L. Wei ◽  
S. Tanigawa ◽  
T. Nakagawa ◽  
K. Ohta ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Electrical Activation

scholarly journals Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

2019 ◽  
Vol 14 (1) ◽  
pp. 53-63 ◽  
Author(s):  
M. S. Bashar ◽  
Rummana Matin ◽  
Munira Sultana ◽  
Ayesha Siddika ◽  
M. Rahaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Localized States ◽  
Stoichiometric Ratio ◽  
Deposited Films

AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealing

1985 ◽  
Vol 58 (8) ◽  
pp. 3252-3254 ◽  
Author(s):  
S. J. Pearton ◽  
K. D. Cummings ◽  
G. P. Vella‐Coleiro
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Activation

The Ion Implanted Arsenic Tail in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
C. Clark
Keyword(s):  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Anodic Oxidation ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Activation ◽  
Spreading Resistance ◽  
Transient Spectroscopy ◽  
And Diffusion

AbstractRapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

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