Rapid Thermal Annealing of Se-Implanted Gallium Arsenide

1987 ◽  
Vol 92 ◽  
Author(s):  
T. Inada ◽  
K. Miyamoto ◽  
A. Nishida
Keyword(s):  
Gallium Arsenide ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Doping Profile ◽  
Lec Gaas

Rapid thermal annealing by using a graphite strip heater has been employed to activate Se atoms implanted in either In-doped or undoped LEC GaAs. Doping profile measurements have shown that highly doped n-type layers with the maximum carrier concentration of 1.2E19/cm3 are formed in the In-doped GaAs implanted with 100keV Se ions at room temperature after rapid thermal annealing at 1000°C for 10 sec. Residual defects existing in Se-implanted layers have been examined. The results show that the introduction of dislocations into Se-implanted layers during post-implant annealing is minimized in the In-doped GaAs samples treated by rapid thermal annealing.

A Study of Damage in Silicon Created By and P+ Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
Fang Ziwei ◽  
Lin Chenglu ◽  
Tsou Shihchang
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Incident Energy ◽  
Room Temperature ◽  
Concentration Profiles ◽  
Molecular Fragments ◽  
Multiple Collision ◽  
Annealing Behavior ◽  
Intermediate Dose

ABSTRACTThe damage and annealing behavior of <100> Si implanted at room temperature by and P+ at different energies (5-600KeV) and intermediate dose (∼1014/cm2) has been investigated. Experimental results show that the damage created by implantation is always greater than that of P+ implantation. The ratio of total displaced atoms of the target cuased by molecular and atomic implantation, ND(mol)d/ND(atom) reached a maximal value at 100KeV () and 50KeV (P+) after rapid thermal annealing, the carrier concentration profiles measured by spreading resistance measurements are also different for the and P+ implanted samples. We attribute essentially this phenomenon to the displacement spike, but the multiple collision effect and the interaction between two molecular fragments should be considered while the incident energy is high.

scholarly journals Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

2019 ◽  
Vol 14 (1) ◽  
pp. 53-63 ◽  
Author(s):  
M. S. Bashar ◽  
Rummana Matin ◽  
Munira Sultana ◽  
Ayesha Siddika ◽  
M. Rahaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Localized States ◽  
Stoichiometric Ratio ◽  
Deposited Films

AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

A Study of Se+ Implants into Encapsulated GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
R. Gwilliam ◽  
M. A. Shahid ◽  
B. J. Sealy
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Residual Damage ◽  
Lower Mobility ◽  
Interface Strain

ABSTRACTThe effects of implanting Se+ ions through Si N4 layers have been compared with implants into uncapped GaAs. Through nitride implants have a higher residual damage, lower carrier concentration and lower mobility following rapid thermal annealing between 850 and 975 °C. The effect is believed to be due to the interface strain between the encapsulant and the amorphous GaAs.

Rapid Thermal Annealing of High Energy Si Implants Into GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Ronald N. Legge ◽  
Wayne M. Paulson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Low Dose ◽  
High Energy ◽  
Low Noise ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Capacitance Voltage ◽  
Lec Gaas

ABSTRACTRapid thermal annealing (RTA) technology offers potential advantages for the processing of ion implanted GaAs. High energy implants of 300 keV or above are used for power MESFETs as well as in the ohmic contacts for low noise devices. The purpose of this paper is to investigate and characterize the RTA of Si implants into LEC GaAs using implant energies of 300keV and above, and a range of doses from 2.3 ×1012 to 3×1014 /cm2. The wafers were analyzed using capacitance-voltage and Hall measurements. Factors which cause variability in pinchoff voltage are identified and an RTA process comparable to conventional furnace annealing is presented for low dose implants. Superior implant activation is observed for higher dose implants through the use of higher annealing temperature.

Electrical and Material Characterization of the Stability of ALGaAs and GaAs Planar Doped Structures

1989 ◽  
Vol 160 ◽  
Author(s):  
Larry P. Sadwick ◽  
Dwight C. Streit
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Doping Profile ◽  
Charge Densities ◽  
Diode Ideality Factor ◽  
Sheet Charge ◽  
The Stability ◽  
Silicon Sheet

AbstractIn this work we have studied the effects of silicon planar doping on the electrical and optical properties of GaAs, and the effects of rapid thermal annealing on AIGaAs planar-doped structures. MBE-grown GaAs epilayers with multiple planar-doped layers displayed a 1.2 eV photoluminescence peak, presumably due to gallium vacancy - donor complexes, for samples with nominal silicon sheet densities much greater than measured charge densities. The Hall mobilities of these samples were also reduced compared to both uniformly-doped and planar-doped structures whose silicon areal densities were more nearly equal to measured sheet charge densities, although X-Ray rocking curves were nearly identical in all cases. Planar-doped AIGaAs Schottky diodes had nearly ideal electrical characteristics. Rapid thermal annealing of the planar-doped structures before fabrication increased the diode ideality factor from n=1.06 to n=1.60, seriously degraded the saturation current and breakdown voltage, and increased the doping profile FWHM from 60Å to 170Å.

Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

2013 ◽  
Vol 47 (11) ◽  
pp. 1470-1474 ◽  
Author(s):  
A. V. Murel ◽  
V. M. Daniltsev ◽  
E. V. Demidov ◽  
M. N. Drozdov ◽  
V. I. Shashkin
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Surface
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