Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon

1998 ◽  
Vol 514 ◽  
Author(s):  
Hua Fang ◽  
Mehmet C. Özttirk ◽  
Edmund G. Seebauer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Titanium Silicide ◽  
Experimental Results ◽  
Substrate Consumption ◽  
Thermal Chemical Vapor Deposition ◽  
Dose Levels

ABSTRACTThis work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCI4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm−2 to 5*times;1015 cm−2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surfacepassivation model to explain the effects.

Silicon Etching in Rapid Thermal Chemical Vapor Deposition of Tisi2

1995 ◽  
Vol 387 ◽  
Author(s):  
Xiaowei Ren ◽  
Dannellia B. Gladden ◽  
Mehmet C. Öztürk ◽  
A. Dale Batchelor
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Deep Submicron ◽  
Process Conditions ◽  
Silicon Etching ◽  
Substrate Consumption ◽  
Thermal Chemical Vapor Deposition ◽  
Ultrashallow Junctions

AbstractDownscaling of microelectronics devices into the deep submicron regime requires ultrashallow junctions with reliable, low-resistivity contacts. The conventional self-aligned TiSi2 technology exhibits a serious limitation in forming contacts to ultra-shallow junctions due to silicon substrate consumption. Selective chemical vapor deposition of TiSi2 is being investigated because of its potential for overcoming this difficulty. In this process Si and Ti are supplied from the gas phase. The standard source gas for Ti has been TiCl4 while several gases including SiH4, Si2H6 and SiH2Cl2 are available for Si. The reports on this process indicate that optimized process conditions can deliver TiSi2 films without substrate consumption. Although this promise is significant, the deposition has a complicated chemistry involving processes such as silicon etching, silicon consumption or silicon pedestal deposition taking place along with TiSi2 deposition. Although, suppression of Si-substrate etching by excess H2 has been reported previously, a broad quantitative analysis has been lacking up until this reporting. In this work, we have examined silicon etching trends as a function of temperature for different H2:TiCl4 flow ratios using thermodynamic equilibrium calculations. We have also performed experiments in a lamp heated rapid thermal chemical vapor deposition reactor to study substrate etching over the temperature range of 600°C to 800°C and for H2 flows from 0 to 1000 sccm. A silicon conversion efficiency is defined as a measure of the amount of Si converted to TiSi2 relative to total Si used from the substrate and it is evaluated via both thermodynamic calculations and experiments with good agreement between the two. Our calculations suggest that at high temperatures, etching occurs mainly via formation of SiCl2. Addition of H2 into the reaction chemistry encourages formation of HCl reducing the amount of Cl available for SiCl2 formation responsible for substrate etching. Our results show that by optimizing the H2 flow rate and the process temperature silicon substrate etching can be effectively suppressed.

The “Buffer” Layer in the Cvd Growth of β-SiC on (001) Silicon

1989 ◽  
Vol 148 ◽  
Author(s):  
T. T. Cheng ◽  
P. Pirouz ◽  
J. A. Powell
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Compound Semiconductors ◽  
Experimental Results ◽  
Surface Nucleation ◽  
Cvd Growth

ABSTRACTThe concept of a “buffer” layer in the epitaxial growth of compound semiconductors on (001) silicon substrate is discussed on the basis of homogeneous and heterogeneous surface nucleation. Experimental results on the nucleation of β-SiC on (001) Si by Chemical Vapor Deposition (CVD) are presented and they are discussed in terms of the model for the growth of the buffer layer.

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