Growth, Patterning and Microelectronic Applications of Epitaxial Cobaltdisilicide

1998 ◽  
Vol 514 ◽  
Author(s):  
S. Mantl ◽  
L. Kappius ◽  
A. Antons ◽  
M. Löken ◽  
F. Klinkhammer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Epitaxial Layer ◽  
Molecular Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystalline Silicon ◽  
High Quality ◽  
Ion Beam Synthesis

ABSTRACTWe report on the epitaxial growth of CoSi2 on silicon using ion beam synthesis and molecular beam allotaxy. The latter process uses molecular beam epitaxy to grow a silicide precipitate distribution embedded in single crystalline silicon and thermal annealing to form the epitaxial layer. Both, ion beam synthesis and molecular beam allotaxy, are capable to grow epitaxial buried and surface CoSi2 layers on Si(100) and Si(111) of high quality.

Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy

2003 ◽  
Vol 792 ◽  
Author(s):  
S.R. Vangala ◽  
B. Krejca ◽  
K. Krishnaswami ◽  
H. Dauplaise ◽  
X. Qian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxide Layer ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Subsurface Damage ◽  
High Quality

ABSTRACTBromine Ion Beam Assisted Etching (Br-IBAE) is shown to be useful in removing GaSb wafer chemical mechanical polish (CMP) surface and subsurface damage; creating microstructure patterns in GaSb surfaces through stencil, photoresist, and oxides masks; and stabilizing the as-etched GaSb surface with a thin, easily thermally desorbed oxide layer. Thus, the Br-IBAE technique is well suited as a GaSb surface final-polish technique in overgrowth applications that require “epi-ready” GaSb (100) surfaces for molecular beam epitaxy (MBE) as well as applications such as quantum wires and dots that require high-quality GaSb/AlInGaSb MBE overgrowth over patterned GaSb (100) surfaces.

Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7626-7632 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
High Quality ◽  
Aluminum Films ◽  
Sapphire Substrates

2 inch high-quality Al epitaxial films with sharp and abrupt Al/Al2O3 interfaces have been grown on sapphire substrates by molecular beam epitaxy with an in-plane alignment of Al[11̄0]/Al2O3[11̄00].

scholarly journals High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source

2006 ◽  
Vol 89 (12) ◽  
pp. 122912 ◽  
Author(s):  
Xing Gu ◽  
Natalia Izyumskaya ◽  
Vitaly Avrutin ◽  
Hadis Morkoç ◽  
Tae Dong Kang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality

High-quality m-plane GaN thin films deposited on γ-LiAlO2 by ion-beam-assisted molecular-beam epitaxy

2006 ◽  
Vol 88 (1) ◽  
pp. 011902 ◽  
Author(s):  
J. W. Gerlach ◽  
A. Hofmann ◽  
T. Höche ◽  
F. Frost ◽  
B. Rauschenbach ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
High Quality

Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
M. F. Wu ◽  
A. Vantomme ◽  
H. Pattyn ◽  
G. Langouche
Keyword(s):  
Epitaxial Growth ◽  
Structural Characterization ◽  
Ion Beam ◽  
Surface Layers ◽  
High Quality ◽  
Vacancy Ordering ◽  
Ion Beam Synthesis ◽  
Buried Layers

AbstractThe results are discussed of the characterization by means of TEM, RBS and XRD of ErSi2-x layers prepared by ion beam synthesis on (111) silicon. It will be shown that high quality (buried) layers can be prepared by channelled implantation of the erbium, whereas unchannelled implantation leads to discontinuous polycrystalline surface layers. The epitaxial growth and vacancy ordering in the silicide are discussed.

Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells

1985 ◽  
Vol 58 (2) ◽  
pp. 793-796 ◽  
Author(s):  
Naoki Mino ◽  
Masakazu Kobayashi ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates

Preparation of High-Quality CuInSe2 Thin Films by Molecular Beam Epitaxy

1997 ◽  
Vol 485 ◽  
Author(s):  
B. H. Tseng ◽  
S. B. Lin ◽  
D. J. Yang
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Luminescence Properties ◽  
High Quality ◽  
Film Composition ◽  
Exciton Emission ◽  
Gaas Substrates

AbstractCuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

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