Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells

1985 ◽  
Vol 58 (2) ◽  
pp. 793-796 ◽  
Author(s):  
Naoki Mino ◽  
Masakazu Kobayashi ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates

Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7626-7632 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
High Quality ◽  
Aluminum Films ◽  
Sapphire Substrates

2 inch high-quality Al epitaxial films with sharp and abrupt Al/Al2O3 interfaces have been grown on sapphire substrates by molecular beam epitaxy with an in-plane alignment of Al[11̄0]/Al2O3[11̄00].

scholarly journals High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source

2006 ◽  
Vol 89 (12) ◽  
pp. 122912 ◽  
Author(s):  
Xing Gu ◽  
Natalia Izyumskaya ◽  
Vitaly Avrutin ◽  
Hadis Morkoç ◽  
Tae Dong Kang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality

High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1556-L1558 ◽  
Author(s):  
Yoshitaka Okada ◽  
Shigeru Ohta ◽  
Hirofumi Shimomura ◽  
Akio Kawabata ◽  
Mitsuo Kawabe
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Films

Growth of high quality CdTe on Si substrates by molecular beam epitaxy

1996 ◽  
Vol 25 (8) ◽  
pp. 1402-1405 ◽  
Author(s):  
L. A. Almeida ◽  
Y. P. Chen ◽  
J. P. Faurie ◽  
S. Sivananthan ◽  
David J. Smith ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates

Growing high-quality ternary CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism

2015 ◽  
Vol 646 ◽  
pp. 129-134 ◽  
Author(s):  
Jyh-Shyang Wang ◽  
Shih-Chang Tong ◽  
Yu-Hsuan Tsai ◽  
Wei-jiun Tsai ◽  
Chu-Shou Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates
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