High-quality m-plane GaN thin films deposited on γ-LiAlO2 by ion-beam-assisted molecular-beam epitaxy

2006 ◽  
Vol 88 (1) ◽  
pp. 011902 ◽  
Author(s):  
J. W. Gerlach ◽  
A. Hofmann ◽  
T. Höche ◽  
F. Frost ◽  
B. Rauschenbach ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
High Quality

High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy

2020 ◽  
Vol 127 (24) ◽  
pp. 243901 ◽  
Author(s):  
S. P. Bommanaboyena ◽  
T. Bergfeldt ◽  
R. Heller ◽  
M. Kläui ◽  
M. Jourdan
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy

2003 ◽  
Vol 792 ◽  
Author(s):  
S.R. Vangala ◽  
B. Krejca ◽  
K. Krishnaswami ◽  
H. Dauplaise ◽  
X. Qian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxide Layer ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Subsurface Damage ◽  
High Quality

ABSTRACTBromine Ion Beam Assisted Etching (Br-IBAE) is shown to be useful in removing GaSb wafer chemical mechanical polish (CMP) surface and subsurface damage; creating microstructure patterns in GaSb surfaces through stencil, photoresist, and oxides masks; and stabilizing the as-etched GaSb surface with a thin, easily thermally desorbed oxide layer. Thus, the Br-IBAE technique is well suited as a GaSb surface final-polish technique in overgrowth applications that require “epi-ready” GaSb (100) surfaces for molecular beam epitaxy (MBE) as well as applications such as quantum wires and dots that require high-quality GaSb/AlInGaSb MBE overgrowth over patterned GaSb (100) surfaces.

Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant

2009 ◽  
Vol 95 (26) ◽  
pp. 262105 ◽  
Author(s):  
Oliver Bierwagen ◽  
Mark E. White ◽  
Min-Ying Tsai ◽  
James S. Speck
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality

Laser molecular beam epitaxy of high-quality GdxY1−xCa4O(BO3)3 thin films

2001 ◽  
Vol 229 (1-4) ◽  
pp. 208-211 ◽  
Author(s):  
T.-W Kim ◽  
N Arai ◽  
Y Matsumoto ◽  
M Yoshimura ◽  
H Furuya ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Laser Molecular Beam Epitaxy

High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

2001 ◽  
Vol 44 (7) ◽  
pp. 947-952 ◽  
Author(s):  
Fan Chen ◽  
Huibin LÜ ◽  
Tong Zhao ◽  
Rongping Wang ◽  
Yueliang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Laser Molecular Beam Epitaxy

Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

2014 ◽  
Vol 104 (9) ◽  
pp. 092113 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Yoshitaka Taniyasu ◽  
Shin-ichi Karimoto ◽  
Yoshiharu Krockenberger ◽  
Hideki Yamamoto
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Single Crystal ◽  
Molecular Beam ◽  
Ion Beam ◽  
Cubic Boron Nitride

Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy

2000 ◽  
Vol 77 (2) ◽  
pp. 259-261 ◽  
Author(s):  
Kenji Yoshino ◽  
Daisuke Maruoka ◽  
Tetsuo Ikari ◽  
Paul J. Fons ◽  
Shigeru Niki ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Temperature Variation ◽  
Molecular Beam ◽  
High Quality ◽  
Carrier Recombination ◽  
Recombination Processes
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