scholarly journals High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source

2006 ◽  
Vol 89 (12) ◽  
pp. 122912 ◽  
Author(s):  
Xing Gu ◽  
Natalia Izyumskaya ◽  
Vitaly Avrutin ◽  
Hadis Morkoç ◽  
Tae Dong Kang ◽  
...  
CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7626-7632 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  

2 inch high-quality Al epitaxial films with sharp and abrupt Al/Al2O3 interfaces have been grown on sapphire substrates by molecular beam epitaxy with an in-plane alignment of Al[11̄0]/Al2O3[11̄00].


1985 ◽  
Vol 58 (2) ◽  
pp. 793-796 ◽  
Author(s):  
Naoki Mino ◽  
Masakazu Kobayashi ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

2008 ◽  
Vol 57 (2) ◽  
pp. 1236
Author(s):  
He Meng ◽  
Liu Guo-Zhen ◽  
Qiu Jie ◽  
Xing Jie ◽  
Lü Hui-Bin

1998 ◽  
Vol 514 ◽  
Author(s):  
S. Mantl ◽  
L. Kappius ◽  
A. Antons ◽  
M. Löken ◽  
F. Klinkhammer ◽  
...  

ABSTRACTWe report on the epitaxial growth of CoSi2 on silicon using ion beam synthesis and molecular beam allotaxy. The latter process uses molecular beam epitaxy to grow a silicide precipitate distribution embedded in single crystalline silicon and thermal annealing to form the epitaxial layer. Both, ion beam synthesis and molecular beam allotaxy, are capable to grow epitaxial buried and surface CoSi2 layers on Si(100) and Si(111) of high quality.


Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.


2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  

Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Jean-Pierre Locquet ◽  
Jin Won Seo ◽  
Christel Dieker ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (75) ◽  
pp. 47789-47795 ◽  
Author(s):  
Y. Tung ◽  
C. W. Chong ◽  
C. W. Liao ◽  
C. H. Chang ◽  
S. Y. Huang ◽  
...  

High-quality crystalline (Cr,Sb)-doped Bi2Se3(Cr-BSS) films were synthesized using molecular beam epitaxy (MBE).


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