Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
M. F. Wu ◽  
A. Vantomme ◽  
H. Pattyn ◽  
G. Langouche
Keyword(s):  
Epitaxial Growth ◽  
Structural Characterization ◽  
Ion Beam ◽  
Surface Layers ◽  
High Quality ◽  
Vacancy Ordering ◽  
Ion Beam Synthesis ◽  
Buried Layers

AbstractThe results are discussed of the characterization by means of TEM, RBS and XRD of ErSi2-x layers prepared by ion beam synthesis on (111) silicon. It will be shown that high quality (buried) layers can be prepared by channelled implantation of the erbium, whereas unchannelled implantation leads to discontinuous polycrystalline surface layers. The epitaxial growth and vacancy ordering in the silicide are discussed.

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

2002 ◽  
Vol 194 (1) ◽  
pp. 47-55 ◽  
Author(s):  
E. Theodossiu ◽  
H. Baumann ◽  
W. Matz ◽  
A. M�cklich
Keyword(s):  
Ion Beam ◽  
Synthesis And Characterization ◽  
Surface Layers ◽  
Ion Beam Synthesis

Structural characterization of Cu nanocrystals formed in SiO2 by high-energy ion-beam synthesis

2005 ◽  
Vol 98 (2) ◽  
pp. 024307 ◽  
Author(s):  
B. Johannessen ◽  
P. Kluth ◽  
C. J. Glover ◽  
G. de M. Azevedo ◽  
D. J. Llewellyn ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beam Synthesis

Ion-beam synthesis and structural characterization of ZnS nanocrystals in SiO2

1998 ◽  
Vol 72 (26) ◽  
pp. 3488-3490 ◽  
Author(s):  
C. Bonafos ◽  
B. Garrido ◽  
M. López ◽  
A. Romano-Rodriguez ◽  
O. González-Varona ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Zns Nanocrystals

Growth, Patterning and Microelectronic Applications of Epitaxial Cobaltdisilicide

1998 ◽  
Vol 514 ◽  
Author(s):  
S. Mantl ◽  
L. Kappius ◽  
A. Antons ◽  
M. Löken ◽  
F. Klinkhammer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Epitaxial Layer ◽  
Molecular Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystalline Silicon ◽  
High Quality ◽  
Ion Beam Synthesis

ABSTRACTWe report on the epitaxial growth of CoSi2 on silicon using ion beam synthesis and molecular beam allotaxy. The latter process uses molecular beam epitaxy to grow a silicide precipitate distribution embedded in single crystalline silicon and thermal annealing to form the epitaxial layer. Both, ion beam synthesis and molecular beam allotaxy, are capable to grow epitaxial buried and surface CoSi2 layers on Si(100) and Si(111) of high quality.

High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
H. Temkin ◽  
L. R. Harriott ◽  
J. Weiner ◽  
R. A. Hamm ◽  
M. B. Panish
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Low Energy ◽  
High Quality ◽  
Lithography Process ◽  
Luminescence Efficiency ◽  
Surface Steps ◽  
Inp Substrates ◽  
Vacuum Lithography

AbstractWe demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.

Structural characterization of PbTiO3 thin films prepared by ion beam induced CVD and evaporation of lead

1996 ◽  
Vol 272 (1) ◽  
pp. 99-106 ◽  
Author(s):  
D. Leinen ◽  
A. Caballero ◽  
A. Fernández ◽  
J.P. Espinós ◽  
A. Justo ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Ion Beam

Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization

2000 ◽  
Vol 338-342 ◽  
pp. 309-312 ◽  
Author(s):  
A. Romano-Rodríguez ◽  
A. Pérez-Rodríguez ◽  
C. Serre ◽  
J.R. Morante ◽  
Jaume Esteve ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Structural Characterization ◽  
Ion Beam
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