Deuterium Sintering of CMOS Technology for Improved Hot Carrier Reliability

1998 ◽  
Vol 510 ◽  
Author(s):  
J. Lee ◽  
Z. Chen ◽  
K. Hess ◽  
J.W. Lyding
Keyword(s):  
Metal Oxide ◽  
Isotope Effect ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Sintering Process ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Electrical Characterizations

AbstractIt has been found that deuterium (D) instead of hydrogen (H) can be used to greatly strengthen the resistance of metal oxide semiconductor (MOS) transistors against hot carrier induced degradation. We have applied the new deuterium sintering process to CMOS technology and have obtained significantly improved hot carrier reliability resulting from the isotope effect. We will present a summary of these lifetime improvements from five different transistor structures of five different manufacturers, as well as the physical and electrical characterizations of the deuterium sintering process.

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1050-1053 ◽  
Author(s):  
Masayasu Miyake ◽  
Toshio Kobayashi ◽  
Yutaka Sakakibara ◽  
Kimiyoshi Deguchi ◽  
Mitsutoshi Takahashi
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

2008 ◽  
Vol 92 (24) ◽  
pp. 243501 ◽  
Author(s):  
Jone F. Chen ◽  
Kuen-Shiuan Tian ◽  
Shiang-Yu Chen ◽  
J. R. Lee ◽  
Kuo-Ming Wu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Prediction Method ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Lifetime Prediction ◽  
Hot Carrier
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