Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor

2014 ◽  
Vol 105 (4) ◽  
pp. 043506 ◽  
Author(s):  
G. Gruber ◽  
P. Hadley ◽  
M. Koch ◽  
T. Aichinger
Keyword(s):  
Magnetic Resonance ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Magnetic Resonance Study ◽  
Hot Carrier ◽  
Electrically Detected Magnetic Resonance ◽  
Effect Transistor

Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor

2005 ◽  
Vol 44 (8) ◽  
pp. 5889-5892 ◽  
Author(s):  
Yukiharu Uraoka ◽  
Hiroyuki Honda ◽  
Takashi Fuyuki ◽  
Takaoki Sasaki ◽  
Mitsuo Yasuhira
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Hot Carrier ◽  
Carrier Effect ◽  
Effect Transistor ◽  
Hot Carrier Effect
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