An electron temperature model of the nMOSFETs

With the development of IC manufacturing process, the device dimensions have been on the nanoscale, while the device performance, such as the electron velocity, mobility and thermal noise, is significantly affected by the hot carrier effect. This paper proposes an electron temperature model to accurately predict the hot carrier effect. The channel transverse electric field is firstly derived by using the channel electric potential equation, taking into account the boundary conditions of the electric field. Based on the electric field equation, the energy balance equation is solved involving the impact of the temperature gradient and then the electron temperature model is established. The impact of the electron temperature on the channel mobility and of temperature gradient on the electron velocity has also been investigated. The results show that when the device enters the nanoscale, the electron mobility is more susceptible to the influence of the electric field and the electron temperature, and the impact of the temperature gradient on the velocity becomes obviously greater. The electron temperature model proposed in this paper can be applied to the performance analysis and modeling of nanosized MOSFETs.