Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Jone F. Chen; Kuen-Shiuan Tian; Shiang-Yu Chen; J. R. Lee; Kuo-Ming Wu; C. M. Liu

doi:10.1063/1.2947588

Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Applied Physics Letters ◽

10.1063/1.2947588 ◽

2008 ◽

Vol 92 (24) ◽

pp. 243501 ◽

Cited By ~ 7

Author(s):

Jone F. Chen ◽

Kuen-Shiuan Tian ◽

Shiang-Yu Chen ◽

J. R. Lee ◽

Kuo-Ming Wu ◽

...

Keyword(s):

Metal Oxide ◽

Prediction Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lifetime Prediction ◽

Hot Carrier

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Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.4891847 ◽

2014 ◽

Vol 105 (4) ◽

pp. 043506 ◽

Cited By ~ 2

Author(s):

G. Gruber ◽

P. Hadley ◽

M. Koch ◽

T. Aichinger

Keyword(s):

Magnetic Resonance ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnetic Resonance Study ◽

Hot Carrier ◽

Electrically Detected Magnetic Resonance ◽

Effect Transistor

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STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

Acta Physica Sinica ◽

10.7498/aps.49.1241 ◽

2000 ◽

Vol 49 (7) ◽

pp. 1241

Author(s):

REN HONG-XIA ◽

HAO YUE ◽

XU DONG-GANG

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Effect Transistor ◽

Hot Carrier Effect

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Impact of Mechanical Stress on Hot-Carrier Lifetime and Time-Dependent Dielectric Breakdown in Downscaled Complimentary Metal–Oxide–Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.021206 ◽

2009 ◽

Vol 48 (2) ◽

pp. 021206 ◽

Cited By ~ 1

Author(s):

Eiji Morifuji

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Carrier Lifetime ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Time Dependent Dielectric Breakdown

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Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6175 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6175-6180 ◽

Cited By ~ 4

Author(s):

Toshiaki Tsuchiya ◽

Terukazu Ohno ◽

Satoshi Tazawa ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Hot Carrier ◽

Recombination Centers

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Anomalous Hot-Carrier-Induced Increase in Saturation-Region Drain Current in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.918416 ◽

2008 ◽

Vol 55 (5) ◽

pp. 1137-1142 ◽

Cited By ~ 12

Author(s):

Shiang-Yu Chen ◽

Jone F. Chen ◽

J. R. Lee ◽

Kuo-Ming Wu ◽

C. M. Liu ◽

...

Keyword(s):

Metal Oxide ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Saturation Region

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Spontaneous hot-carrier photon emission rates in silicon: Improved modeling and applications to metal oxide semiconductor devices

Physical Review B ◽

10.1103/physrevb.65.195209 ◽

2002 ◽

Vol 65 (19) ◽

Cited By ~ 9

Author(s):

M. Pavesi ◽

P. L. Rigolli ◽

M. Manfredi ◽

P. Palestri ◽

L. Selmi

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Photon Emission ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Emission Rates ◽

Hot Carrier

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Hot Carrier Relief of Metal Oxide Semiconductor Field Effect Transistor by Using Work-Function Engineering

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2286 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2286-L2288 ◽

Cited By ~ 4

Author(s):

Udo Schwalke ◽

Wilfried Hänsch ◽

Arnulf Lill

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Effect Transistor

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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