Hot-carrier-induced oxide charge trapping and interface trap creation in metal–oxide–semiconductor devices studied by hydrogen/deuterium isotope effect

2001 ◽  
Vol 78 (13) ◽  
pp. 1882-1884 ◽  
Author(s):  
Kangguo Cheng ◽  
Jinju Lee ◽  
Karl Hess ◽  
Joseph W. Lyding
Keyword(s):  
Metal Oxide ◽  
Isotope Effect ◽  
Charge Trapping ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Deuterium Isotope Effect ◽  
Oxide Charge ◽  
Hot Carrier ◽  
Hydrogen Deuterium

Deuterium Sintering of CMOS Technology for Improved Hot Carrier Reliability

1998 ◽  
Vol 510 ◽  
Author(s):  
J. Lee ◽  
Z. Chen ◽  
K. Hess ◽  
J.W. Lyding
Keyword(s):  
Metal Oxide ◽  
Isotope Effect ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Sintering Process ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Electrical Characterizations

AbstractIt has been found that deuterium (D) instead of hydrogen (H) can be used to greatly strengthen the resistance of metal oxide semiconductor (MOS) transistors against hot carrier induced degradation. We have applied the new deuterium sintering process to CMOS technology and have obtained significantly improved hot carrier reliability resulting from the isotope effect. We will present a summary of these lifetime improvements from five different transistor structures of five different manufacturers, as well as the physical and electrical characterizations of the deuterium sintering process.

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