Intrinsic Gettering of Nickel and Copper for Advanced Low Temperature Device Processes

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Ogushi ◽  
N. Reilly ◽  
S. Sadamitsu ◽  
Y. Koike ◽  
M. Sano
Keyword(s):  
Low Temperature ◽  
Strong Dependence ◽  
Oxygen Precipitate ◽  
Cu Contamination ◽  
Temperature Deposition ◽  
Contamination Levels ◽  
Oxygen Precipitates ◽  
Generation Lifetime ◽  
Or Gate ◽  
Low Temperature Process

AbstractThe formation and dissolution of Ni and Cu silicides were investigated to determine effective intrinsic gettering (IG) for low temperature processes. Ni formed silicides easily at low contamination levels and these silicides formed the nuclei for OSF during subsequent annealing at temperatures above 1000°C. Ni silicides were dissolved and gettered during low temperature deposition of a poly-back seal (PBS) at 620°C, whereas Cu silicides, once formed, easily induced secondary defects on further annealing even at low temperatures and could not be dissolved or gettered by PBS. The sizes and densities of oxygen precipitates necessary to intrinsically getter Ni and Cu contamination levels of 1012atoms/cm2 were also investigated with respect to generation lifetime. Cu contamination at this level did not degrade generation lifetime or gate oxide integrity (GOI) yield. For Ni contaminated samples, a strong dependence of generation lifetime on both oxygen precipitate density and size was observed. Effective IG for Ni during a low temperature process was demonstrated using a 2-step low temperature process simulation.

Electric Degradation and Defect Formation of Silicon Due to Cu, Fe, and Ni Contamination

1992 ◽  
Vol 262 ◽  
Author(s):  
Shunta Naito ◽  
Tsuneo Nakashizu
Keyword(s):  
Low Temperature ◽  
Silicon Wafer ◽  
Temperature Region ◽  
Surface Defects ◽  
Defect Formation ◽  
High Density ◽  
Electric Properties ◽  
Low Oxygen ◽  
Cu Contamination ◽  
Generation Lifetime

ABSTRACTElectric degradation of silicon wafer due to Cu, Fe, and Ni contamination has been studied using MCZ with low oxygen and CZ wafers. In the cases of Cu and Ni contamination, the electric properties depended on the characteristics of the starting wafers,. especially the type of conductance. The behavior of these metals in the low temperature region played an important role to understand the electric properties. On the contrary, no difference between p- and n-type wafers was observed in Fe contamination in our experiment.The surface defects were observed with high density in the MCZ wafers in Cu contamination. These defects were sensitive to the degradation of the MOS C-t generation lifetime. Making use of this relation, the efficiency of the extrinsic gettering was evaluated.

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

Fabrication of Chitosan-nanohydroxyapatite Scaffolds via Low-temperature Deposition Manufacturing

2011 ◽  
Vol 26 (1) ◽  
pp. 12-16 ◽  
Author(s):  
Xiong-Fei ZHENG ◽  
Wen-Jie ZHAI ◽  
Ying-Chun LIANG ◽  
Tao SUN
Keyword(s):  
Low Temperature ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn
Keyword(s):  
Low Temperature ◽  
Si Nanoparticles ◽  
Non Volatile Memory ◽  
Amorphous Si ◽  
Volatile Memory ◽  
Low Temperature Process

Low temperature process to create brick

2008 ◽  
Vol 22 (6) ◽  
pp. 1114-1121 ◽  
Author(s):  
Mouhamadou Bassir Diop ◽  
Michael W. Grutzeck
Keyword(s):  
Low Temperature ◽  
Low Temperature Process

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Sign in / Sign up

Export Citation Format

Share Document