Electric Degradation and Defect Formation of Silicon Due to Cu, Fe, and Ni Contamination

1992 ◽  
Vol 262 ◽  
Author(s):  
Shunta Naito ◽  
Tsuneo Nakashizu
Keyword(s):  
Low Temperature ◽  
Silicon Wafer ◽  
Temperature Region ◽  
Surface Defects ◽  
Defect Formation ◽  
High Density ◽  
Electric Properties ◽  
Low Oxygen ◽  
Cu Contamination ◽  
Generation Lifetime

ABSTRACTElectric degradation of silicon wafer due to Cu, Fe, and Ni contamination has been studied using MCZ with low oxygen and CZ wafers. In the cases of Cu and Ni contamination, the electric properties depended on the characteristics of the starting wafers,. especially the type of conductance. The behavior of these metals in the low temperature region played an important role to understand the electric properties. On the contrary, no difference between p- and n-type wafers was observed in Fe contamination in our experiment.The surface defects were observed with high density in the MCZ wafers in Cu contamination. These defects were sensitive to the degradation of the MOS C-t generation lifetime. Making use of this relation, the efficiency of the extrinsic gettering was evaluated.

Intrinsic Gettering of Nickel and Copper for Advanced Low Temperature Device Processes

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Ogushi ◽  
N. Reilly ◽  
S. Sadamitsu ◽  
Y. Koike ◽  
M. Sano
Keyword(s):  
Low Temperature ◽  
Strong Dependence ◽  
Oxygen Precipitate ◽  
Cu Contamination ◽  
Temperature Deposition ◽  
Contamination Levels ◽  
Oxygen Precipitates ◽  
Generation Lifetime ◽  
Or Gate ◽  
Low Temperature Process

AbstractThe formation and dissolution of Ni and Cu silicides were investigated to determine effective intrinsic gettering (IG) for low temperature processes. Ni formed silicides easily at low contamination levels and these silicides formed the nuclei for OSF during subsequent annealing at temperatures above 1000°C. Ni silicides were dissolved and gettered during low temperature deposition of a poly-back seal (PBS) at 620°C, whereas Cu silicides, once formed, easily induced secondary defects on further annealing even at low temperatures and could not be dissolved or gettered by PBS. The sizes and densities of oxygen precipitates necessary to intrinsically getter Ni and Cu contamination levels of 1012atoms/cm2 were also investigated with respect to generation lifetime. Cu contamination at this level did not degrade generation lifetime or gate oxide integrity (GOI) yield. For Ni contaminated samples, a strong dependence of generation lifetime on both oxygen precipitate density and size was observed. Effective IG for Ni during a low temperature process was demonstrated using a 2-step low temperature process simulation.

scholarly journals Structures and impact strength variation of chemically crosslinked high-density polyethylene: effect of crosslinking density

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6791-6797
Author(s):  
Yueqing Ren ◽  
Xiaojie Sun ◽  
Lanlan Chen ◽  
Yafei Li ◽  
Miaomiao Sun ◽  
...  
Keyword(s):  
Low Temperature ◽  
Impact Strength ◽  
High Density Polyethylene ◽  
Crosslinking Density ◽  
High Density ◽  
Strength Variation

Crosslinking significantly improves the toughness and impact strength of HDPE and extends its application, especially at low temperature.

Cu to Cu direct bonding at low temperature with high density defect in electrodeposited Cu

2021 ◽  
Vol 550 ◽  
pp. 149337
Author(s):  
Haneul Han ◽  
Chaerin Lee ◽  
Youjung Kim ◽  
Jinhyun Lee ◽  
Rosa Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Density

scholarly journals Low-Temperature Mechanical Properties of High-Density and Low-Density Polyethylene and Their Blends

Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1821
Author(s):  
Ildar I. Salakhov ◽  
Nadim M. Shaidullin ◽  
Anatoly E. Chalykh ◽  
Mikhail A. Matsko ◽  
Alexey V. Shapagin ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Impact Strength ◽  
Relative Elongation ◽  
High Density ◽  
Low Density Polyethylene ◽  
Low Density ◽  
Elongation At Break ◽  
Subzero Temperatures ◽  
Izod Impact

Low-temperature properties of high-density polyethylene (HDPE), low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and their blends were studied. The analyzed low-temperature mechanical properties involve the deformation resistance and impact strength characteristics. HDPE is a bimodal ethylene/1-hexene copolymer; LDPE is a branched ethylene homopolymer containing short-chain branches of different length; LLDPE is a binary ethylene/1-butene copolymer and an ethylene/1-butene/1-hexene terpolymer. The samples of copolymers and their blends were studied by gel permeation chromatography (GPC), differential scanning calorimetry (DSC), 13С NMR spectroscopy, and dynamic mechanical analysis (DMA) using testing machines equipped with a cryochamber. It is proposed that such parameters as “relative elongation at break at −45 °C” and “Izod impact strength at −40 °C” are used instead of the ductile-to-brittle transition temperature to assess frost resistance properties because these parameters are more sensitive to deformation and impact at subzero temperatures for HDPE. LLDPE is shown to exhibit higher relative elongation at break at −45 °C and Izod impact strength at −20 ÷ 60 °C compared to those of LDPE. LLDPE terpolymer added to HDPE (at a content ≥ 25 wt.%) simultaneously increases flow properties and improves tensile properties of the blend at −45 °C. Changes in low-temperature properties as a function of molecular weight, MWD, crystallinity, and branch content were determined for HDPE, LLDPE, and their blends. The DMA data prove the resulting dependences. The reported findings allow one to understand and predict mechanical properties in the HDPE–LLDPE systems at subzero temperatures.

Low Temperature Direct Silicon Wafer Bonding Using Argon Activation

1997 ◽  
Vol 36 (Part 2, No. 5A) ◽  
pp. L527-L528 ◽  
Author(s):  
Robert W. Bower ◽  
Frank Y.-J. Chin
Keyword(s):  
Low Temperature ◽  
Silicon Wafer ◽  
Wafer Bonding
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