Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

2016 ◽  
Vol 63 (12) ◽  
pp. 5060-5063 ◽  
Author(s):  
Chih-Hung Lu ◽  
Tuo-Hung Hou ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Low Temperature Process

Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor

2013 ◽  
Vol 102 (10) ◽  
pp. 102101 ◽  
Author(s):  
Shinya Aikawa ◽  
Peter Darmawan ◽  
Keiichi Yanagisawa ◽  
Toshihide Nabatame ◽  
Yoshiyuki Abe ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Low Temperature Process

Low Temperature Process Technologies for the Next Generation High Performance Polycrystalline Silicon Thin-Film Transistors

2001 ◽  
Vol 685 ◽  
Author(s):  
Seiichiro Higashi ◽  
Daisuke Abe ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Trap States ◽  
Laser Crystallization ◽  
Si Films ◽  
Low Temperature Process

AbstractLow temperature process technologies for high performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) are discussed based on the investigations of pulsed laser crystallization, plasma treatment of poly-Si films, and SiO2/Si interface formation. Although highdensity (∼1018 cm−3) trap states localized at grain boundaries are introduced to the poly-Si films by laser crystallization, they are efficiently decreased to the order of 1016 cm−3 by following hydrogen plasma treatment. It is also shown that high quality SiO2/Si interfaces with the density of interface trap states (Dit) in the order of 1010 cm−2eV−1 are achieved using electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD). By applying these low temperature process technologies to the fabrication process, high performance poly-Si TFTs with high n-channel mobility μn) of 187 cm2V−1s−1, low threshold voltage (Vth) of 1.97 V and small subthreshold swing (S) of 210 mV/dec. were obtained. These results indicate that the development of low temperature process technologies that can control trap states is the key to the next generation high performance poly-Si TFTs.

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