Theoretical Analysis of Electromigration-Induced Failure of Metallic Thin Films

1997 ◽  
Vol 505 ◽  
Author(s):  
Dimitrios Maroudas ◽  
M. Rauf Gungor ◽  
Henry S. Ho ◽  
Matthew N. Enmark

ABSTRACTA comprehensive theoretical analysis is presented of the failure of metallic thin films due to electromigration-induced morphological evolution of transgranular voids. Fully self-consistent dynamical simulations emphasize the important effects on void dynamics of the surface diffusivity anisotropy, together with the strength of the applied electric field and the void size. The simulation results are discussed in the context of an approximate linear stability theory. Our simulations predict formation of wedge-shaped voids, as well as failure due to propagation of slit-like features emanating from void surfaces, in excellent agreement with recent experimental observations.

1998 ◽  
Vol 529 ◽  
Author(s):  
Henry S. Ho ◽  
M. Rauf Gungor ◽  
Dimitrios Maroudas

AbstractA theoretical analysis is presented of the electromigration-induced dynamics of transgranular voids in metallic thin films. The analysis is based on self-consistent dynamical simulations of current-driven void surface propagation coupled with the distribution of the electric field in the metallic film. The simulation predictions highlight the rich nonlinear dynamics of current-driven evolution of voids that become faceted due to the strongly anisotropic nature of surface diffusion. The numerical results are analyzed based on approximate analytical solutions to faceted void migration and a linearized theory for the morphological stability of planar void facets.


2005 ◽  
Vol 863 ◽  
Author(s):  
Jaeseol Cho ◽  
M. Rauf Gungor ◽  
Dimitrios Maroudas

AbstractAn analysis is presented of electromigration-induced migration and oscillatory dynamics of morphologically stable void surfaces based on self-consistent numerical simulations of morphological evolution of voids in metallic thin films. As the morphological stability limit is approached, the migration speed of a stable void deviates substantially from being inversely proportional to the void size, a well-known result that is rigorously valid in an infinite conductor with isotropic material properties. A non-linear shape function that includes both current crowding and diffusional anisotropy effects is used to rescale properly the void migration speed resulting in a universally valid relationship for the migration speed as a function of void size. Furthermore, in grains characterized by high symmetry of surface diffusional anisotropy, our analysis predicts the onset of stable time-periodic states for the void surface morphology that correspond to waves propagating on surfaces of voids that migrate along the metallic film at constant speeds.


2005 ◽  
Vol 899 ◽  
Author(s):  
M. Rauf Gungor ◽  
Jaeseol Cho ◽  
Dimitrios Maroudas

AbstractA theoretical analysis based on self-consistent dynamical simulations is presented of electromigration- and stress-induced surface morphological response of voids confined in metallic thin films. The analysis predicts the onset of stable time-periodic states for the void surface morphological response, which is associated with current-driven wave propagation on the void surface. This time-periodic response is demonstrated under certain electromigration conditions and detailed response diagrams are presented which map the corresponding parameter space to regions of steady, time-periodic, and unstable surface morphological response. The evolution of the electrical resistance of these thin films also is computed, providing an interpretation for experimentally observed time-periodic response of the electrical resistance of metallic interconnect lines on the basis of current-driven void morphological evolution. In addition, we demonstrate significant effects on the electromigration-induced morphologically stable void migration of mechanical stress application in a metallic thin film. Specifically, we find that under certain electromechanical conditions, elastic stress can cause substantial retardation of void motion, as measured by the constant speed of electromigration-induced translation of morphologically stable voids. More importantly, this effect suggests the possibility for complete inhibition of void motion under stress.


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