Theoretical Analysis of Faceted Void Dynamics in Metallic Thin Films Under Electromigration Conditions

1998 ◽  
Vol 529 ◽  
Author(s):  
Henry S. Ho ◽  
M. Rauf Gungor ◽  
Dimitrios Maroudas

AbstractA theoretical analysis is presented of the electromigration-induced dynamics of transgranular voids in metallic thin films. The analysis is based on self-consistent dynamical simulations of current-driven void surface propagation coupled with the distribution of the electric field in the metallic film. The simulation predictions highlight the rich nonlinear dynamics of current-driven evolution of voids that become faceted due to the strongly anisotropic nature of surface diffusion. The numerical results are analyzed based on approximate analytical solutions to faceted void migration and a linearized theory for the morphological stability of planar void facets.

1997 ◽  
Vol 505 ◽  
Author(s):  
Dimitrios Maroudas ◽  
M. Rauf Gungor ◽  
Henry S. Ho ◽  
Matthew N. Enmark

ABSTRACTA comprehensive theoretical analysis is presented of the failure of metallic thin films due to electromigration-induced morphological evolution of transgranular voids. Fully self-consistent dynamical simulations emphasize the important effects on void dynamics of the surface diffusivity anisotropy, together with the strength of the applied electric field and the void size. The simulation results are discussed in the context of an approximate linear stability theory. Our simulations predict formation of wedge-shaped voids, as well as failure due to propagation of slit-like features emanating from void surfaces, in excellent agreement with recent experimental observations.


2005 ◽  
Vol 899 ◽  
Author(s):  
M. Rauf Gungor ◽  
Jaeseol Cho ◽  
Dimitrios Maroudas

AbstractA theoretical analysis based on self-consistent dynamical simulations is presented of electromigration- and stress-induced surface morphological response of voids confined in metallic thin films. The analysis predicts the onset of stable time-periodic states for the void surface morphological response, which is associated with current-driven wave propagation on the void surface. This time-periodic response is demonstrated under certain electromigration conditions and detailed response diagrams are presented which map the corresponding parameter space to regions of steady, time-periodic, and unstable surface morphological response. The evolution of the electrical resistance of these thin films also is computed, providing an interpretation for experimentally observed time-periodic response of the electrical resistance of metallic interconnect lines on the basis of current-driven void morphological evolution. In addition, we demonstrate significant effects on the electromigration-induced morphologically stable void migration of mechanical stress application in a metallic thin film. Specifically, we find that under certain electromechanical conditions, elastic stress can cause substantial retardation of void motion, as measured by the constant speed of electromigration-induced translation of morphologically stable voids. More importantly, this effect suggests the possibility for complete inhibition of void motion under stress.


2007 ◽  
Vol 101 (2) ◽  
pp. 023518 ◽  
Author(s):  
Jaeseol Cho ◽  
M. Rauf Gungor ◽  
Dimitrios Maroudas

Author(s):  
R. H. Geiss

The theory and practical limitations of micro area scanning transmission electron diffraction (MASTED) will be presented. It has been demonstrated that MASTED patterns of metallic thin films from areas as small as 30 Åin diameter may be obtained with the standard STEM unit available for the Philips 301 TEM. The key to the successful application of MASTED to very small area diffraction is the proper use of the electron optics of the STEM unit. First the objective lens current must be adjusted such that the image of the C2 aperture is quasi-stationary under the action of the rocking beam (obtained with 40-80-160 SEM settings of the P301). Second, the sample must be elevated to coincide with the C2 aperture image and its image also be quasi-stationary. This sample height adjustment must be entirely mechanical after the objective lens current has been fixed in the first step.


1989 ◽  
Vol 174 ◽  
pp. 11-24 ◽  
Author(s):  
S. Schneider ◽  
H. Schröder ◽  
K. Samwer ◽  
B. Schuhmacher ◽  
U. Köster

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