On the Superconducting Critical Temperature of Heavily Disordered Interfaces Hosting Multi-Gap Superconductivity

LaAlO3/SrTiO3 interfaces are a nice example of a two-dimensional electron gas, whose carrier density can be varied by top- and back-gating techniques. Due to the electron confinement near the interface, the two-dimensional band structure is split into sub-bands, and more than one sub-band can be filled when the carrier density increases. These interfaces also host superconductivity, and the interplay of two-dimensionality, multi-band character, with the possible occurrence of multi-gap superconductivity and disorder calls for a better understanding of finite-bandwidth effects on the superconducting critical temperature of heavily disordered multi-gap superconductors.

Electron confinement meet electron delocalization: non-additivity and finite-size effects in the polarizabilities and dispersion coefficients of the fullerenes

Unique dichotomy of electron confinement and delocalization yields non-additive quantum-size effects in the polarizabilities and dispersion coefficients of the fullerenes.

Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.03As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications

Effect of high bandgap [Formula: see text] nm AlAs on the electronic and optical properties of the In[Formula: see text]Ga[Formula: see text]As/Al[Formula: see text]In[Formula: see text]As superlattice is investigated by using effective mass approximation under the electric field. Electronic transitions are obtained as [Formula: see text] and [Formula: see text] eV for [Formula: see text] and [Formula: see text] in the gain region. Thin AlAs increases electron confinement in the superlattice and prevents electron leakage in the gain region which mostly results in higher absorption/emission in the superlattice. AlAs has no major effects on transitions energies in the gain region but it is effectively decreasing the total absorption in the injector region and preventing the internal absorption. AlAs also makes the superlattice optically more stable by decreasing the high refractive index change in the injector region by factor 5.