Role of conductivity on the electromigration-induced morphological evolution of inclusions in {110}-oriented single crystal metallic thin films

2019 ◽  
Vol 126 (16) ◽  
pp. 165305 ◽  
Author(s):  
Jay Santoki ◽  
Arnab Mukherjee ◽  
Daniel Schneider ◽  
Britta Nestler
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Morphological Evolution ◽  
Metallic Thin Films ◽  
Oriented Single Crystal

scholarly journals Correlation between Gilbert damping and electric resistivity in Fe94Co6/GaAs single crystal thin films: A role of electron scattering

2017 ◽  
Vol 903 ◽  
pp. 012063
Author(s):  
Akihiro Iwasaki ◽  
Takahiko Suzuki ◽  
Nobuyuki Inaba ◽  
Yutaka Takahashi ◽  
Fumiyoshi Kirino ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Electron Scattering ◽  
Electric Resistivity ◽  
Gilbert Damping

Analysis of Electromigration- and Stress-Induced Dynamical Response of Voids Confined in Metallic Thin Films

2005 ◽  
Vol 899 ◽  
Author(s):  
M. Rauf Gungor ◽  
Jaeseol Cho ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Electrical Resistance ◽  
Morphological Evolution ◽  
Dynamical Response ◽  
Metallic Thin Films ◽  
Morphological Response ◽  
Periodic Response ◽  
Void Migration ◽  
Interconnect Lines ◽  
Time Periodic

AbstractA theoretical analysis based on self-consistent dynamical simulations is presented of electromigration- and stress-induced surface morphological response of voids confined in metallic thin films. The analysis predicts the onset of stable time-periodic states for the void surface morphological response, which is associated with current-driven wave propagation on the void surface. This time-periodic response is demonstrated under certain electromigration conditions and detailed response diagrams are presented which map the corresponding parameter space to regions of steady, time-periodic, and unstable surface morphological response. The evolution of the electrical resistance of these thin films also is computed, providing an interpretation for experimentally observed time-periodic response of the electrical resistance of metallic interconnect lines on the basis of current-driven void morphological evolution. In addition, we demonstrate significant effects on the electromigration-induced morphologically stable void migration of mechanical stress application in a metallic thin film. Specifically, we find that under certain electromechanical conditions, elastic stress can cause substantial retardation of void motion, as measured by the constant speed of electromigration-induced translation of morphologically stable voids. More importantly, this effect suggests the possibility for complete inhibition of void motion under stress.

Molecular orientation of lead phthalocyanine on (100) oriented single crystal diamond surfaces

2015 ◽  
Vol 17 (15) ◽  
pp. 9619-9623 ◽  
Author(s):  
Wim Dexters ◽  
Emilie Bourgeois ◽  
Milos Nesládek ◽  
Jan D'Haen ◽  
Etienne Goovaerts ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Molecular Orientation ◽  
Structure And Properties ◽  
Diamond Surfaces ◽  
Single Crystal Diamond ◽  
Oriented Single Crystal

The structure and properties of lead phthalocyanine thin films on hydrogen- and oxygen terminated single crystal diamond were investigated.

Imaging and analysis of submicron single-crystal aluminum whiskers in Al/Cu/Si deposited films

1992 ◽  
Vol 50 (2) ◽  
pp. 1290-1291
Author(s):  
Jacob A. Schaper
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Single Crystal ◽  
Whisker Growth ◽  
Optical Microscope ◽  
Composition Analysis ◽  
Metallic Thin Films ◽  
Wafer Level ◽  
Stress Relieving ◽  
Application Specific

The formation of stress-relieving hillocks, also referred to as single-crystal whiskers is a well-known occurrence in the preparation of metallic thin films. In the manufacture of Application Specific Integrated Circuits, devices at the wafer level are often processed through the first metallic thin film process, coated with a plasma enhanced oxide (PEO), then stockpiled either at the manufacturer's site or the customer's to await final option-level programming. Whisker growth has been detected on wafers retrieved from the stockpile inventory. This paper describes the techniques employed for initial detection, subsequent sample preparation, and the composition analysis of submicron diameter whiskers in Al/Cu/Si thin films on inventoried product wafers.First indications of whisker growth are increased surface defect levels observed during high power optical microscope sample inspection. Typical appearance of the whiskers, as viewed with an optical microscope, are shown in Figure 1. Structures thought to be surface particles are later imaged in the SEM and confirmed to be oxide-covered whiskers, as shown in Figure 2. Imaging of the nonconductive oxide layer is accomplished via a Field Emission SEM.

Expanded Thermochromic Color Changes in VO2 Thin Film Devices Using Structured Plasmonic Metal Layers

2013 ◽  
Vol 1494 ◽  
pp. 171-177
Author(s):  
Yan Wang ◽  
John F. Muth
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Color Change ◽  
Large Change ◽  
Metallic Phase ◽  
Metallic Thin Films ◽  
Color Changes ◽  
Surface Plasmas ◽  
Metal Layers

ABSTRACTWe investigate metallic thin films on VO2 and show that the magnitude of the reflected color change in that visible portion of the spectrum as VO2 undergoes the insulating to metallic phase transition can be controlled by changing the type of metal, the thickness of the metal and by patterning the metal at the nano scale. We consider the role of surface plasmas in the metal film and show that in the near infrared, the magnitude of the reflectivity increase for metal coated VO2 films, but decrease for uncoated VO2 thin films. This is explained in the context of Fresnel equations and considering the large change in the imaginary part of the dielectric constant as the VO2 changes state from the insulating to metallic phase.

Double Perovskite Bi2FeCrO6 Thin Films for Photovoltaics

2020 ◽  
Vol 305 ◽  
pp. 77-82
Author(s):  
De Huan Meng ◽  
Fei Ming Bai
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Open Circuit Voltage ◽  
Pulsed Laser ◽  
Double Perovskite ◽  
Open Circuit ◽  
Laser Deposition ◽  
High Quality ◽  
Low Bandgap ◽  
Oriented Single Crystal

High-quality BFCO films with smooth morphology were deposited on (001)-oriented single crystal substrates by pulsed-laser deposition. The perfect ferroelectric nature of the BFCO films were probed by PFM and electrical P-E hysteresis measurements and the obtained saturated remeanent polarization value reaches up to 60 μC/cm2. Besides, BFCO films show relatively low bandgap of 2.5 eV, can absorb the sunlight and convert the solar energy to electrically energy effectively. A photocurrent of 1.2 mA/cm2 and an open-circuit voltage of about 0.53 V were obtained under AM1.5G illumination. The results mainfest the BFCO a potiential material for multifunctional devices, especially for photovoltaics.

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