Interface and Bulk Oxide Damage Induced by Boron Implantation

1985 ◽  
Vol 45 ◽  
Author(s):  
H. Wong ◽  
N.W. Cheung
Keyword(s):  
Tunneling Current ◽  
Electron Trapping ◽  
Constant Voltage ◽  
Hole Trapping ◽  
Capacitance Voltage ◽  
Boron Implantation ◽  
Thin Oxide ◽  
Oxide Damage

ABSTRACTInvestigations were carried out on the damage of SiO2 and the Si-SiO2 interface induced by boron implantation through polysilicon/SiO2 /p-Si structures with doses up to 1014cm−2 and annealed at 950°C. Using the constant voltage stressing technique, both capacitance-voltage and thin-oxide tunneling current measurements showed that both electron trapping and hole trapping are increased, and that ion-induced electron trapping overcompetes hole trapping for boron doses higher than 5×1013cm−2.

Implantation Induced Charge Trapping and Interface States Generation in Si-SiO2 System

1985 ◽  
Vol 54 ◽  
Author(s):  
H. Wong ◽  
N. W. Cheung
Keyword(s):  
Cross Section ◽  
Charge Trapping ◽  
Interface States ◽  
Electron Trapping ◽  
Constant Voltage ◽  
Hole Trapping ◽  
A Value ◽  
Trapping Centers ◽  
Induced Charge ◽  
Silicon Implantation

ABSTRACTConstant-voltage stressing has been used to investigate the damage of SiO2 and the Si/SiO2 interface induced by silicon implantation through polysilicon/SiO2/P-Si structures annealed at 950°C. The implant doses used were from 5×1011cm-2 to 1014cm-2. Although no detectable interface states density was observed after the annealing for implant doses less than 2×1013cm-2, interface states generation, hole trapping, and electron trapping were found to be greatly enhanced by the Si implantation. The interface states density generation rate was found to increase with higher implant doses. The density of hole trapping centers saturated at a value of 3×1012cm-2 for implant doses higher than 2×1012cm∼-2. The density of electron trapping centers was found to increase with implant dose, while the associated trapping cross section was much smaller than that of the unimplant oxide.

Hole Trapping in the NBTI Characteristic of SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 667-670
Author(s):  
Yan Jing He ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Meng Zhang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Hole Trapping ◽  
Primary Mechanism ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
P Type

P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacitance-voltage (CV) measurements with different starting voltages. The negative shift voltage ∆Vshift and the hysteresis voltages ∆VH which caused by the hole traps in the MOSCAPs and MOSFETs are extracted from CV results. The results show that the hole traps extracted from MOSCAPs are larger than the that extracted from the threshold voltage shift in the MOSFETs. It suggests holes trapping are the primary mechanism contributing to the NBTI, but not all the holes work. Part of the hole traps are compensation by sufficient electrons in the MOSFET structure.

Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices

2007 ◽  
Vol 38 (8-9) ◽  
pp. 931-941 ◽  
Author(s):  
Saibal Mukhopadhyay ◽  
Keunwoo Kim ◽  
Jae-Joon Kim ◽  
Shih-Hsien Lo ◽  
Rajiv V. Joshi ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Double Gate ◽  
Thin Oxide
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