Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

N. Yang; W.K. Henson; J.R. Hauser; J.J. Wortman

doi:10.1109/16.772492

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

IEEE Transactions on Electron Devices ◽

10.1109/16.772492 ◽

1999 ◽

Vol 46 (7) ◽

pp. 1464-1471 ◽

Cited By ~ 194

Author(s):

N. Yang ◽

W.K. Henson ◽

J.R. Hauser ◽

J.J. Wortman

Keyword(s):

Tunneling Current ◽

Gate Oxides ◽

Direct Tunneling ◽

Mos Devices ◽

Capacitance Voltage ◽

Direct Tunneling Current ◽

Modeling Study

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Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect

Solid State Communications ◽

10.1016/s0038-1098(02)00719-6 ◽

2003 ◽

Vol 125 (3-4) ◽

pp. 219-223 ◽

Cited By ~ 14

Author(s):

Xiaoyan Liu ◽

Jinfeng Kang ◽

Ruqi Han

Keyword(s):

Current Model ◽

Tunneling Current ◽

Gate Oxide ◽

Quantization Effect ◽

Direct Tunneling ◽

Mos Devices ◽

Depletion Effect ◽

Direct Tunneling Current ◽

Thin Gate Oxide

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A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

IEEE Transactions on Electron Devices ◽

10.1109/16.877179 ◽

2000 ◽

Vol 47 (11) ◽

pp. 2161-2166 ◽

Cited By ~ 38

Author(s):

Kuo-Nan Yang ◽

Huan-Tsung Huang ◽

Ming-Chin Chang ◽

Che-Min Chu ◽

Yuh-Shu Chen ◽

...

Keyword(s):

Physical Model ◽

Tunneling Current ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses

Brazilian Journal of Physics ◽

10.1590/s0103-97332010000400008 ◽

2010 ◽

Vol 40 (4) ◽

pp. 404-407 ◽

Cited By ~ 1

Author(s):

Fatimah Arofiati Noor ◽

Mikrajuddin Abdullah ◽

Sukirno ◽

Khairurrijal

Keyword(s):

Kinetic Energy ◽

Tunneling Current ◽

Gate Oxides ◽

Mos Capacitors ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Energy Components

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Experimental examination of physical model for direct tunneling current in unstressed/stressed ultrathin gate oxides

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824193 ◽

2003 ◽

Cited By ~ 10

Author(s):

S. Takagi ◽

M. Takayanagi ◽

A. Toriumi

Keyword(s):

Physical Model ◽

Tunneling Current ◽

Experimental Examination ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1527710 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1064-1068 ◽

Cited By ~ 13

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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1/f Noise in the Tunneling Current of thin Gate Oxides

MRS Proceedings ◽

10.1557/proc-428-311 ◽

1996 ◽

Vol 428 ◽

Cited By ~ 7

Author(s):

G. B. Alers ◽

D. Monroe ◽

K. S. Krisch ◽

B. E. Weir ◽

A. M. Chang

Keyword(s):

Power Spectrum ◽

Tunneling Current ◽

Current Noise ◽

Simplified Model ◽

Gate Oxides ◽

Current Dependence ◽

Direct Tunneling ◽

Trap Assisted Tunneling ◽

Assisted Tunneling ◽

Direct Tunneling Current

AbstractWe have observed fluctuations in the tunneling current through 3.5 nm gate oxides with a 1/f power spectrum where f is the frequency. For voltages in the direct tunneling regime we lind an anomalous current dependence of the noise relative to previous observations of noise in thin oxides. We present a simplified model for the current noise in terms of fluctuations in a trap assisted tunneling current that exists in the oxide in addition to the direct tunneling current. Current noise appears to be a very sensitive probe of trap assisted tunneling and degradation in oxides.

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Study of direct tunneling current oscillations in ultrathin gate dielectrics

Journal of Applied Physics ◽

10.1063/1.1861153 ◽

2005 ◽

Vol 97 (6) ◽

pp. 064107 ◽

Cited By ~ 4

Author(s):

E. P. Nakhmedov ◽

C. Radehaus ◽

K. Wieczorek

Keyword(s):

Gate Dielectrics ◽

Tunneling Current ◽

Direct Tunneling ◽

Current Oscillations ◽

Direct Tunneling Current

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Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetric double gate MOSFET

Microelectronics Journal ◽

10.1016/j.mejo.2011.02.008 ◽

2011 ◽

Vol 42 (5) ◽

pp. 688-692 ◽

Cited By ~ 3

Author(s):

S.K. Vishvakarma ◽

V. Komal Kumar ◽

A.K. Saxena ◽

S. Dasgupta

Keyword(s):

Tunneling Current ◽

Double Gate ◽

Metal Gate ◽

Direct Tunneling ◽

Double Gate Mosfet ◽

Direct Tunneling Current

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Analysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

ECS Transactions ◽

10.1149/1.2728856 ◽

2019 ◽

Vol 6 (4) ◽

pp. 165-170 ◽

Cited By ~ 2

Author(s):

Georges Guegan ◽

Jeremy Pretet ◽

Romain Gwoziecki ◽

Olivier Gonnard ◽

Gilles Gouget ◽

...

Keyword(s):

Performance Enhancement ◽

Tunneling Current ◽

Device Performance ◽

Direct Tunneling ◽

Direct Tunneling Current

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Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors

Journal of Computational Electronics ◽

10.1007/s10825-004-7092-3 ◽

2004 ◽

Vol 3 (3-4) ◽

pp. 439-442 ◽

Cited By ~ 1

Author(s):

M. Okamoto ◽

N. Mori

Keyword(s):

Numerical Simulation ◽

Tunneling Current ◽

Mos Capacitors ◽

Direct Tunneling ◽

Direct Tunneling Current

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