Tunneling Current Induced Frequency Dispersion in the C-V Behavior of Ultra-Thin Oxide MOS Capacitors

2015 ◽  
Vol 69 (5) ◽  
pp. 243-248 ◽  
Author(s):  
C.-F. Yang ◽  
J.-G. Hwu
Keyword(s):  
Tunneling Current ◽  
Frequency Dispersion ◽  
Mos Capacitors ◽  
Thin Oxide

Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices

2007 ◽  
Vol 38 (8-9) ◽  
pp. 931-941 ◽  
Author(s):  
Saibal Mukhopadhyay ◽  
Keunwoo Kim ◽  
Jae-Joon Kim ◽  
Shih-Hsien Lo ◽  
Rajiv V. Joshi ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Double Gate ◽  
Thin Oxide

A simple technique for hot-carrier-induced interface state analysis in thin oxide MOS capacitors

1999 ◽  
Vol 43 (3) ◽  
pp. 641-644 ◽  
Author(s):  
A. Koukab ◽  
A. Hoffmann ◽  
A. Bath ◽  
J.-P. Charles
Keyword(s):  
Simple Technique ◽  
Interface State ◽  
Mos Capacitors ◽  
Hot Carrier ◽  
Thin Oxide ◽  
State Analysis

Verification of Theoretical Model for Tunneling Currents in Al/SiO2/p-Si MOS Capacitors with Nanometer-Thick Oxides

2015 ◽  
Vol 1112 ◽  
pp. 37-40
Author(s):  
Budi Mulyanti ◽  
Lilik Hasanah ◽  
Arjuni B. Pantjawati ◽  
Hideki Murakami ◽  
Khairurrijal
Keyword(s):  
Experimental Data ◽  
Tunneling Current ◽  
Electron Velocity ◽  
Anisotropic Model ◽  
Mass Model ◽  
Electron Effective Mass ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Calculation Results ◽  
Inversion Condition

The verification of calculation results of the isotropic and anisotropic-isotropic mass models in Al/SiO2/Si MOS capacitor against the experimental data is presented, using electron transversal velocity as a fitting parameter. In the accumulation condition, the comparison yields the electron velocity of 2.8 x 106m/s for both isotropic and isotropic-anisotropic mass models. The tunneling current values for both models are slighly different with experimental data. In the inversion condition, the values of electron velocity for isotropic and isotropic-anisotropic model are 1.55 x 106m/s and 1 x 105m/s, respectively. The calculation results of isotropic-anisotropic mass model appear to be closer to the experimental data compared to those of isotropic mass model, due to the effect of electron effective mass.

Interface and Bulk Oxide Damage Induced by Boron Implantation

1985 ◽  
Vol 45 ◽  
Author(s):  
H. Wong ◽  
N.W. Cheung
Keyword(s):  
Tunneling Current ◽  
Electron Trapping ◽  
Constant Voltage ◽  
Hole Trapping ◽  
Capacitance Voltage ◽  
Boron Implantation ◽  
Thin Oxide ◽  
Oxide Damage

ABSTRACTInvestigations were carried out on the damage of SiO2 and the Si-SiO2 interface induced by boron implantation through polysilicon/SiO2 /p-Si structures with doses up to 1014cm−2 and annealed at 950°C. Using the constant voltage stressing technique, both capacitance-voltage and thin-oxide tunneling current measurements showed that both electron trapping and hole trapping are increased, and that ion-induced electron trapping overcompetes hole trapping for boron doses higher than 5×1013cm−2.

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