The Role of “Antenna” Structure on Thin Oxide Damage from Plasma Induced Wafer Charging

1992 ◽  
Vol 265 ◽  
Author(s):  
Sychyi Fang ◽  
James P. McVittie
Keyword(s):  
Antenna Structure ◽  
Thin Oxide ◽  
Wafer Charging ◽  
Oxide Damage

Toughening of Intermetallics by Coated Ductile Reinforcements

1989 ◽  
Vol 170 ◽  
Author(s):  
H. E. Deve ◽  
A. G. Evans ◽  
R. Mehrabian
Keyword(s):  
Work Hardening ◽  
Oxide Coating ◽  
Product Layer ◽  
Thin Oxide ◽  
High Work ◽  
Reaction Product Layer

AbstractThe effects of reinforcement debonding and work hardening on ductile reinforcement toughening of γ-TiAl have been examined. Debonding has been varied by either the development of a brittle reaction product layer or by depositing a thin oxide coating between the reinforcement and matrix. The role of work hardening has been explored by comparing Nb reinforcements that exhibits high work hardening with solution hardened Ti-Nb alloy that exhibits negligible work hardening. It is demonstrated that a high work of rupture is encouraged by extensive debonding when the reinforcement exhibits high work hardening. Conversely, debonding is not beneficial when the reinforcement exhibits low work hardening.

Interface and Bulk Oxide Damage Induced by Boron Implantation

1985 ◽  
Vol 45 ◽  
Author(s):  
H. Wong ◽  
N.W. Cheung
Keyword(s):  
Tunneling Current ◽  
Electron Trapping ◽  
Constant Voltage ◽  
Hole Trapping ◽  
Capacitance Voltage ◽  
Boron Implantation ◽  
Thin Oxide ◽  
Oxide Damage

ABSTRACTInvestigations were carried out on the damage of SiO2 and the Si-SiO2 interface induced by boron implantation through polysilicon/SiO2 /p-Si structures with doses up to 1014cm−2 and annealed at 950°C. Using the constant voltage stressing technique, both capacitance-voltage and thin-oxide tunneling current measurements showed that both electron trapping and hole trapping are increased, and that ion-induced electron trapping overcompetes hole trapping for boron doses higher than 5×1013cm−2.

Ultra thin-oxide damage from gate charging during PETEOS deposition processing

2003 ◽  
Author(s):  
Young-Gwan Kim ◽  
Hazoong Kim ◽  
Kang-Sik Youn ◽  
Dae-Gwan Kang ◽  
Jeong-Mo Hwang
Keyword(s):  
Thin Oxide ◽  
Oxide Damage

Thin-oxide damage from gate charging during plasma processing

1992 ◽  
Vol 13 (5) ◽  
pp. 288-290 ◽  
Author(s):  
S. Fang ◽  
J.P. McVittie
Keyword(s):  
Plasma Processing ◽  
Thin Oxide ◽  
Oxide Damage

Terahertz wave detection performance of photoconductive antennas: Role of antenna structure and gate pulse intensity

2005 ◽  
Vol 97 (10) ◽  
pp. 103103 ◽  
Author(s):  
R. Yano ◽  
H. Gotoh ◽  
Y. Hirayama ◽  
S. Miyashita ◽  
Y. Kadoya ◽  
...  
Keyword(s):  
Terahertz Wave ◽  
Detection Performance ◽  
Antenna Structure ◽  
Photoconductive Antennas ◽  
Wave Detection ◽  
Pulse Intensity ◽  
Gate Pulse

Thin Oxide Defects Resulting from Plasma Induced Wafer Charging

1992 ◽  
Vol 262 ◽  
Author(s):  
Sychyi Fang ◽  
James P. McVittie
Keyword(s):  
Negative Charge ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Antenna Structure ◽  
Hole Trapping ◽  
Breakdown Mechanism ◽  
Polarity Effects ◽  
Wafer Charging

ABSTRACTEEPROM charge monitors reveal that an O2 plasma induces a negative charge which peaks at the wafer center for the asher used. The charge damage to small gate area MOS capacitors is investigated by using “antenna” structure. The post plasma interface state density increases with increasing antenna size and varies by two orders of magnitude. A hole trapping induced breakdown mechanism during plasma charging is supported by new experimental evidence such as the annealing and polarity effects of charge-to-breakdown and tunneling currents. Where stressing has not being severe, these hole traps are annealable at T > 650°C, while in severely stressed areas early breakdown occurs which is not annealable.

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