Implantation Induced Charge Trapping and Interface States Generation in Si-SiO2 System

1985 ◽  
Vol 54 ◽  
Author(s):  
H. Wong ◽  
N. W. Cheung
Keyword(s):  
Cross Section ◽  
Charge Trapping ◽  
Interface States ◽  
Electron Trapping ◽  
Constant Voltage ◽  
Hole Trapping ◽  
A Value ◽  
Trapping Centers ◽  
Induced Charge ◽  
Silicon Implantation

ABSTRACTConstant-voltage stressing has been used to investigate the damage of SiO2 and the Si/SiO2 interface induced by silicon implantation through polysilicon/SiO2/P-Si structures annealed at 950°C. The implant doses used were from 5×1011cm-2 to 1014cm-2. Although no detectable interface states density was observed after the annealing for implant doses less than 2×1013cm-2, interface states generation, hole trapping, and electron trapping were found to be greatly enhanced by the Si implantation. The interface states density generation rate was found to increase with higher implant doses. The density of hole trapping centers saturated at a value of 3×1012cm-2 for implant doses higher than 2×1012cm∼-2. The density of electron trapping centers was found to increase with implant dose, while the associated trapping cross section was much smaller than that of the unimplant oxide.

Influence of Current Injection into a-Sin:H Films on Charge Trapping Defects

1990 ◽  
Vol 209 ◽  
Author(s):  
Tomoki Oku ◽  
Kiyoshi Kawabata ◽  
Yukio Higaki ◽  
Teruhito Matsui ◽  
Hirozo Takano ◽  
...  
Keyword(s):  
Valence Band ◽  
Cross Section ◽  
Degradation Mechanism ◽  
Charge Trapping ◽  
Current Injection ◽  
Band Tail ◽  
Hole Trapping ◽  
Trapping Centers

ABSTRACTThe degradation mechanism of a-SiN:H films under current injection is investigated. It is shown that the degradation of a-SiN:H films is closely related to the hole trapping into Si-Si, Si-H, and Si0 defects. It is presumably concluded that the hole trapping centers are the Si-Si defects in the valence band tail. We estimate that the hole trapping cross-section is nearly equal to 10−20cm2.

Interface and Bulk Oxide Damage Induced by Boron Implantation

1985 ◽  
Vol 45 ◽  
Author(s):  
H. Wong ◽  
N.W. Cheung
Keyword(s):  
Tunneling Current ◽  
Electron Trapping ◽  
Constant Voltage ◽  
Hole Trapping ◽  
Capacitance Voltage ◽  
Boron Implantation ◽  
Thin Oxide ◽  
Oxide Damage

ABSTRACTInvestigations were carried out on the damage of SiO2 and the Si-SiO2 interface induced by boron implantation through polysilicon/SiO2 /p-Si structures with doses up to 1014cm−2 and annealed at 950°C. Using the constant voltage stressing technique, both capacitance-voltage and thin-oxide tunneling current measurements showed that both electron trapping and hole trapping are increased, and that ion-induced electron trapping overcompetes hole trapping for boron doses higher than 5×1013cm−2.

Electronic Impact of Inclusions in Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Erik M. Muller ◽  
John Smedley ◽  
Balaji Raghothamachar ◽  
Mengjia Gaowei ◽  
Jeffrey W. Keister ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Secondary Phase ◽  
Surface Region ◽  
Phase Region ◽  
Electron Trapping ◽  
Near Surface ◽  
X Ray ◽  
Photoconductive Gain ◽  
Single Crystal Diamond ◽  
Topography Data

AbstractX-ray topography data are compared with photodiode responsivity maps to identify potential candidates for electron trapping in high purity, single crystal diamond. X-ray topography data reveal the defects that exist in the diamond material, which are dominated by non-electrically active linear dislocations. However, many diamonds also contain defects configurations (groups of threading dislocations originating from a secondary phase region or inclusion) in the bulk of the wafer which map well to regions of photoconductive gain, indicating that these inclusions are a source of electron trapping which affect the performance of diamond X-ray detectors. It was determined that photoconductive gain is only possible with the combination of an injecting contact and charge trapping in the near surface region. Typical photoconductive gain regions are 0.2 mm across; away from these near-surface inclusions the device yields the expected diode responsivity.

Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures

1986 ◽  
Vol 168 (1-3) ◽  
pp. 665-671 ◽  
Author(s):  
A. Herms ◽  
J.R. Morante ◽  
J. Samitier ◽  
A. Cornet ◽  
P. Cartujo ◽  
...  
Keyword(s):  
Cross Section ◽  
Photon Energy ◽  
Interface States ◽  
Optical Cross Section

The interaction of kinks and elastic waves

1962 ◽  
Vol 266 (1325) ◽  
pp. 222-246 ◽  
Keyword(s):  
Energy Density ◽  
Cross Section ◽  
Elastic Waves ◽  
String Model ◽  
Zero Point ◽  
Radiation Reaction ◽  
Point Energy ◽  
A Value ◽  
Ordinary Point ◽  
Isotropic Elastic Medium

A kink on a dislocation in an isotropic elastic medium is treated as a 'point defect’ with a certain mass, constrained to move along a line and subject to a radiation reaction. A value for the mass is obtained from the well know n stretched-string model, and the radiation reaction is found by calculating the rate at which an oscillating kink radiates energy into the medium . It is found that the kink has a scattering cross-section for elastic waves which i§ proportional to the square of its width. For long waves the cross-section is independent of frequency, in contrast to the case of ordinary point defects. A kink moving through an isotropic flux of elastic waves experiences a retarding force proportional to the product of its velocity and the energy density of the waves. In connexion with a similar result for the retarding force on a dislocation moving rigidly it has been suggested that the expression for the energy density should include the zero-point energy. A formal quantum -mechanical calculation shows that this is not so in the case of a kink.

Hg(63P1)-sensitized decomposition of HNCO vapor and HNCO–H2 mixtures; the reaction of hydrogen atoms with HNCO

1968 ◽  
Vol 46 (4) ◽  
pp. 527-530 ◽  
Author(s):  
N. J. Friswell ◽  
R. A. Back
Keyword(s):  
Quantum Yield ◽  
Cross Section ◽  
Initial Step ◽  
Primary Process ◽  
Hydrogen Atoms ◽  
Direct Photolysis ◽  
A Value ◽  
The Cross

The Hg(63P1)-sensitized decomposition of HNCO vapor has been briefly studied at 26 °C with HNCO pressures from about 3 to 30 Torr. The products detected were the same as in the direct photolysis, CO, N2, and H2. The quantum yield of CO was appreciably less than unity, compared with a value of 1.5 in the direct photolysis under similar conditions. From this and other observations it is tentatively concluded that a single primary process occurs:[Formula: see text]From a study of the mercury-photosensitized reactions in mixtures of HNCO with H2, it was concluded that hydrogen atoms react with HNCO to form CO but not N2. The initial step is probably addition to form NH2CO. From the competition between reaction [1] and the corresponding quenching by H2, the cross section for reaction [1] was estimated to be 2.3 times that of hydrogen.

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