Current-Stress-Induced Interface States in p-Si Mos Diodes Detected by a.c. Conductance Measurement

1995 ◽  
Vol 391 ◽  
Author(s):  
Masao Inoue ◽  
Junji Shirafuji
Keyword(s):  
Metal Oxide ◽  
Cross Section ◽  
Capture Cross Section ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capture Cross ◽  
Conductance Measurement ◽  
Current Stress ◽  
Energy Profiles

AbstractEffect of Fowler-Nordheim current stress on (100) p-Si metal/oxide/semiconductor diodes have been studied by means of a.c. conductance measurement. Growth of two distinct peaks are observed in the depletion and the inversion resions corresponding to the generation of two kinds of defects in the upper and lower halves of the bandgap. These defects show different behaviors against the current stress in the energy profiles of the density and the capture cross section. The degradation of the Si/SiO2 interface is discussed in relation to the defect creation.

Study of Spatial and Energetical Behavior of Slow Si-SiO2 Interface States By Tunnel-Dlts Under Fowler-Nordheim Stress

1987 ◽  
Vol 105 ◽  
Author(s):  
D. Vuillaume ◽  
H. Lakhdari ◽  
J. C. Bourgoin ◽  
R. Bouchakour ◽  
M. Jourdain
Keyword(s):  
Metal Oxide ◽  
High Field ◽  
Strong Dependence ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Mos Structure ◽  
The Creation ◽  
Kinetics Of

AbstractWe study the behavior of the spatial and energetical distribution of the slow Si-SiO2 interface states ( i.e. the defects located in the strained SiO2 layer near the interface) when the Metal-oxide-semiconductor (MOS) structure is submitted to a high field electrons injection from the Si substrate. We have analysed the creation kinetics of these slow states in order to compare with the behavior of the fast interface states which are better studied. We demonstrate that the fast interface states are more rapidly generated than the slow states and that the creation kinetics of fast states reach a saturation at lower injected charge. We also find that the fast interface states generation is independent from the energetical location of the states in the Si bandgap. For the generation of slow states, we observe a weak dependence on the energetical location of the defects in the SiO2 bandgap, and a strong dependence on the depth location from the Si-SiO2 interface.

scholarly journals Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors

2017 ◽  
Vol 121 (17) ◽  
pp. 174105 ◽  
Author(s):  
F. Palumbo ◽  
R. Winter ◽  
K. Tang ◽  
P. C. McIntyre ◽  
M. Eizenberg
Keyword(s):  
Metal Oxide ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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