Modeling and analysis of the admittance characteristics of n+metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3on In0.53Ga0.47As

2012 ◽  
Vol 111 (7) ◽  
pp. 074109 ◽  
Author(s):  
G. W. Paterson ◽  
M. C. Holland ◽  
I. G. Thayne ◽  
A. R. Long
Keyword(s):  
Metal Oxide ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Modeling And Analysis

Study of Spatial and Energetical Behavior of Slow Si-SiO2 Interface States By Tunnel-Dlts Under Fowler-Nordheim Stress

1987 ◽  
Vol 105 ◽  
Author(s):  
D. Vuillaume ◽  
H. Lakhdari ◽  
J. C. Bourgoin ◽  
R. Bouchakour ◽  
M. Jourdain
Keyword(s):  
Metal Oxide ◽  
High Field ◽  
Strong Dependence ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Mos Structure ◽  
The Creation ◽  
Kinetics Of

AbstractWe study the behavior of the spatial and energetical distribution of the slow Si-SiO2 interface states ( i.e. the defects located in the strained SiO2 layer near the interface) when the Metal-oxide-semiconductor (MOS) structure is submitted to a high field electrons injection from the Si substrate. We have analysed the creation kinetics of these slow states in order to compare with the behavior of the fast interface states which are better studied. We demonstrate that the fast interface states are more rapidly generated than the slow states and that the creation kinetics of fast states reach a saturation at lower injected charge. We also find that the fast interface states generation is independent from the energetical location of the states in the Si bandgap. For the generation of slow states, we observe a weak dependence on the energetical location of the defects in the SiO2 bandgap, and a strong dependence on the depth location from the Si-SiO2 interface.

scholarly journals Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors

2017 ◽  
Vol 121 (17) ◽  
pp. 174105 ◽  
Author(s):  
F. Palumbo ◽  
R. Winter ◽  
K. Tang ◽  
P. C. McIntyre ◽  
M. Eizenberg
Keyword(s):  
Metal Oxide ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

On the role of interface states in low-voltage leakage currents of metal–oxide–semiconductor structures

2002 ◽  
Vol 80 (24) ◽  
pp. 4597-4599 ◽  
Author(s):  
F. Crupi ◽  
C. Ciofi ◽  
A. Germanò ◽  
G. Iannaccone ◽  
J. H. Stathis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Low Voltage ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Leakage Currents ◽  
Semiconductor Structures
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