Effect of electron heating on electron capture cross section in very small metal‐oxide‐semiconductor transistors

1993 ◽  
Vol 62 (18) ◽  
pp. 2233-2235 ◽  
Author(s):  
Z. M. Shi ◽  
J.‐P. Miéville ◽  
M. Dutoit
1995 ◽  
Vol 391 ◽  
Author(s):  
Masao Inoue ◽  
Junji Shirafuji

AbstractEffect of Fowler-Nordheim current stress on (100) p-Si metal/oxide/semiconductor diodes have been studied by means of a.c. conductance measurement. Growth of two distinct peaks are observed in the depletion and the inversion resions corresponding to the generation of two kinds of defects in the upper and lower halves of the bandgap. These defects show different behaviors against the current stress in the energy profiles of the density and the capture cross section. The degradation of the Si/SiO2 interface is discussed in relation to the defect creation.


1954 ◽  
Vol 32 (4) ◽  
pp. 275-290 ◽  
Author(s):  
A. Charles Whittier

A proton beam was directed through hydrogen gas at low pressure and magnetic analysis of the emergent beam showed that an appreciable fraction of the beam was transformed into negative hydrogen ions. After the beam had traversed a sufficient layer of gas, the ratio of negative hydrogen ions to protons reached an equilibrium value which was a maximum of 22.2% at 8.5 kev. The proton energy interval investigated extended from 4 to 70 kev.In this interval the electron loss cross section for negative hydrogen ions was measured and found to vary from 6.3 × 10−16 sq. cm. at 4.2 kev. to 2.5 × 10−10 sq. cm. at 70.3 kev. The electron capture cross section for protons in hydrogen was measured over the same interval and the results agreed substantially with those of other workers. The electron capture cross section for neutral atoms was also determined by combining present results for the negative ion loss cross section and for the equilibrium ratio of H− to H+ with the values of Bartels and of Montague and Ribe for the ratio of neutral atom loss cross section to the proton capture cross section.


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