Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy

P. Bury; I. Bellan; H. Kobayashi; M. Takahashi; T. Matsumoto

doi:10.1063/1.4897454

Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy

Journal of Applied Physics ◽

10.1063/1.4897454 ◽

2014 ◽

Vol 116 (14) ◽

pp. 144302

Author(s):

P. Bury ◽

I. Bellan ◽

H. Kobayashi ◽

M. Takahashi ◽

T. Matsumoto

Keyword(s):

Metal Oxide ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Acoustic Spectroscopy

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Accurate determination of shallow doping profiles and interface states for metal–oxide–semiconductor structures from measured capacitance–voltage data

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587122 ◽

1994 ◽

Vol 12 (1) ◽

pp. 342 ◽

Cited By ~ 1

Author(s):

A. L. M. Osse

Keyword(s):

Metal Oxide ◽

Accurate Determination ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Doping Profiles

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On the role of interface states in low-voltage leakage currents of metal–oxide–semiconductor structures

Applied Physics Letters ◽

10.1063/1.1487450 ◽

2002 ◽

Vol 80 (24) ◽

pp. 4597-4599 ◽

Cited By ~ 25

Author(s):

F. Crupi ◽

C. Ciofi ◽

A. Germanò ◽

G. Iannaccone ◽

J. H. Stathis ◽

...

Keyword(s):

Metal Oxide ◽

Low Voltage ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Leakage Currents ◽

Semiconductor Structures

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Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Semiconductors ◽

10.1134/s1063782618020203 ◽

2018 ◽

Vol 52 (2) ◽

pp. 242-247 ◽

Cited By ~ 1

Author(s):

S. E. Tyaginov ◽

A. A. Makarov ◽

M. Jech ◽

M. I. Vexler ◽

J. Franco ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Charge Carriers ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Self Consistent ◽

Physical Principles

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On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1005 ◽

2002 ◽

Vol 389-393 ◽

pp. 1005-1008 ◽

Cited By ~ 20

Author(s):

H.Ö. Ólafsson ◽

Fredrik Allerstam ◽

Einar Ö. Sveinbjörnsson

Keyword(s):

Metal Oxide ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Study and improvement of anomalous interface states of metal‐oxide‐semiconductor structures induced by rapid thermal post‐oxide annealing

Journal of Applied Physics ◽

10.1063/1.353774 ◽

1993 ◽

Vol 73 (10) ◽

pp. 5038-5042 ◽

Cited By ~ 14

Author(s):

J. C. Hsieh ◽

Y. K. Fang ◽

C. W. Chen ◽

N. S. Tsai ◽

M. S. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters ◽

10.1063/1.4907861 ◽

2015 ◽

Vol 106 (5) ◽

pp. 051605 ◽

Cited By ~ 52

Author(s):

Shenghou Liu ◽

Shu Yang ◽

Zhikai Tang ◽

Qimeng Jiang ◽

Cheng Liu ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B ◽

10.1103/physrevb.64.125306 ◽

2001 ◽

Vol 64 (12) ◽

Cited By ~ 37

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

D. A. Drabold

Keyword(s):

Metal Oxide ◽

First Principles ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Semiconductor Structures ◽

Current Voltage

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Cited By ~ 4

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2963705 ◽

2008 ◽

Vol 104 (3) ◽

pp. 034313 ◽

Cited By ~ 6

Author(s):

Gargi Chakraborty ◽

C. K. Sarkar

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Tunneling Currents

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