Assessment of hot‐hole‐induced interface states and trapped carriers in submicronn(metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement

R. Ghodsi; Y. T. Yeow; M. K. Alam

doi:10.1063/1.112121

Assessment of hot‐hole‐induced interface states and trapped carriers in submicronn(metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement

Applied Physics Letters ◽

10.1063/1.112121 ◽

1994 ◽

Vol 65 (9) ◽

pp. 1139-1141 ◽

Cited By ~ 2

Author(s):

R. Ghodsi ◽

Y. T. Yeow ◽

M. K. Alam

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Measurement

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Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Semiconductors ◽

10.1134/s1063782618020203 ◽

2018 ◽

Vol 52 (2) ◽

pp. 242-247 ◽

Cited By ~ 1

Author(s):

S. E. Tyaginov ◽

A. A. Makarov ◽

M. Jech ◽

M. I. Vexler ◽

J. Franco ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Charge Carriers ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Self Consistent ◽

Physical Principles

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Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.3231924 ◽

2009 ◽

Vol 95 (12) ◽

pp. 123508 ◽

Cited By ~ 1

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Noise ◽

Frequency Channel

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Post‐irradiation cracking of H2and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.353348 ◽

1993 ◽

Vol 73 (2) ◽

pp. 658-667 ◽

Cited By ~ 148

Author(s):

R. E. Stahlbush ◽

A. H. Edwards ◽

D. L. Griscom ◽

B. J. Mrstik

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Post Irradiation

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Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Applied Physics Letters ◽

10.1063/1.4908123 ◽

2015 ◽

Vol 106 (6) ◽

pp. 062104 ◽

Cited By ~ 13

Author(s):

G. Ortiz ◽

C. Strenger ◽

V. Uhnevionak ◽

A. Burenkov ◽

A. J. Bauer ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Hall Effect ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Acceptor Concentration ◽

Density Of Interface States

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Interface states in metal-oxide-semiconductor field-effect transistors

Microelectronics Reliability ◽

10.1016/0026-2714(71)90466-5 ◽

1971 ◽

Vol 10 (3) ◽

pp. 149-150

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Interface states in metal-oxide-semiconductor field-effect transistors

Solid-State Electronics ◽

10.1016/0038-1101(70)90033-x ◽

1970 ◽

Vol 13 (12) ◽

pp. 1527-1540 ◽

Cited By ~ 5

Author(s):

C. Séquin ◽

E. Baldinger

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field

Journal of Applied Physics ◽

10.1063/1.4892891 ◽

2014 ◽

Vol 116 (6) ◽

pp. 064510

Author(s):

J. Molina ◽

J. De La Hidalga ◽

E. Gutierrez

Keyword(s):

Magnetic Field ◽

External Magnetic Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

High Index ◽

Oxide Semiconductor

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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