Deposition of aluminum Oxynitride Films by Magnetron Sputtering: Effect of Bombardment and Substrate Heating on Structural and Mechanical Properties

1995 ◽  
Vol 388 ◽  
Author(s):  
Russell V. Smilgys ◽  
Eric Takamura ◽  
Irwin L. Singer ◽  
Steven W. Robey ◽  
Douglas A. Kirkpatrick
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Aluminum Oxynitride ◽  
X Ray Diffraction ◽  
Etch Pits ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Planar Magnetron ◽  
Continuous Indentation

ABSTRACTAluminum oxynitride films, 1 μm thick, are deposited onto glass substrates by planar magnetron sputtering from an alumina target in a mixture of nitrogen and argon. one set of films is deposited onto glass substrates that are heat sunk to a holder, whose temperature is held below 100°C. a second set of films is deposited onto glass substrates that are mechanically clamped to a holder, whose temperature is allowed to rise up to 250°C. Characterization by continuous indentation testing, secondary electron microscopy, and x-ray diffraction reveals significant differences in mechanical properties and surface structure between the two sets of films. Films deposited with holder cooling have a smooth surface and no evidence of crystallinity; films deposited without holder cooling have etch pits on their surface that vary with position across the substrate. the later films show crystallinity and have twice the hardness and a 60% greater elastic modulus.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Microstructure and Mechanical Properties of Chromium Carbide Coatings Deposited by Magnetron Sputtering Technique

2019 ◽  
Vol 397 ◽  
pp. 118-124
Author(s):  
Linda Aissani ◽  
Khaoula Rahmouni ◽  
Laala Guelani ◽  
Mourad Zaabat ◽  
Akram Alhussein
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Diffusion Mechanism ◽  
X Ray Diffraction ◽  
Chromium Carbides ◽  
X Ray ◽  
Mechanical And Structural Properties

From the hard and anti-corrosions coatings, we found the chromium carbides, these components were discovered by large studies; like thin films since years ago. They were pointed a good quality for the protection of steel, because of their thermal and mechanical properties for this reason, it was used in many fields for protection. Plus: their hardness and their important function in mechanical coatings. The aim of this work joins a study of the effect of the thermal treatment on mechanical and structural properties of the Cr/steel system. Thin films were deposited by cathodic magnetron sputtering on the steel substrates of 100C6, contain 1% wt of carbon. Samples were annealing in vacuum temperature interval between 700 to 1000 °C since 45 min, it forms the chromium carbides. Then pieces are characterising by X-ray diffraction, X-ray microanalysis and scanning electron microscopy. Mechanical properties are analysing by Vickers test. The X-ray diffraction analyse point the formation of the Cr7C3, Cr23C6 carbides at 900°C; they transformed to ternary carbides in a highest temperature, but the Cr3C2 doesn’t appear. The X-ray microanalysis shows the diffusion mechanism between the chromium film and the steel sample; from the variation of: Cr, Fe, C, O elements concentration with the change of annealing temperature. The variation of annealing temperature shows a clean improvement in mechanical and structural properties, like the adhesion and the micro-hardness.

Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering

2007 ◽  
Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Tin Oxide ◽  
Reactive Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.

Structure and Properties of C-Axis Oriented AlN Films Reactively Deposited by DC Planar Magnetron Sputtering

1989 ◽  
Vol 167 ◽  
Author(s):  
Takakazu Takahashi ◽  
Fumio Takeda ◽  
Masahiko Naoe
Keyword(s):  
Magnetron Sputtering ◽  
Film Plane ◽  
Dielectric Constants ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Planar Magnetron ◽  
Diffraction Peaks ◽  
Ambient Gas

AbstractAluminum nitride (AlN) films have been deposited by reactive DC planar magnetron sputtering at a low substrate temperature of 80°C. An Al disk and either N2 or NH3 were used as a target and an ambient gas, respectively. In films deposited in N2, the c-axis of AlN crystallites was perpendicular to the film plane. On the other hand, in NH3, X-ray diffraction peaks from (100), (110) and (200) were observed. The surface and the cross-sectional microstructures of AlN films deposited in N2 were significantly different from that deposited in NH3. The surface of films deposited in NH3 was smoother than that deposited in N2. The transmittivity of films deposited in NH3 was superior to that deposited in N2 in wavelength of 275∼450 nm. Resistivities of films deposited in N2 and in NH3 were 1014sim;1015 Ω · cm. Dielectric constants of films deposited in N2, and of that deposited in NH3, were 9.7, and 9, respectively, in a frequency range of 20 kHz to 20 MHz. The structure and the properties of AlN films deposited by this method depended on kind of ambient gas.

Evaluation of Mechanical Properties of Sputtered Ceramic Films from Nanoindentation and Wafer Curvature Techniques

1995 ◽  
Vol 403 ◽  
Author(s):  
Rama B. Inturi ◽  
John A. Barnard
Keyword(s):  
Mechanical Properties ◽  
Ambient Temperature ◽  
Glass Substrate ◽  
Room Temperature ◽  
Elastic Behavior ◽  
X Ray Diffraction ◽  
Substrate Effects ◽  
X Ray ◽  
Glass Substrates ◽  
Ceramic Films

AbstractTiB2, MoSi2, Si3N4 and Ta4N ceramic films were magnetron sputtered on oxidized Si and Coming 7059 glass substrates at ambient temperature. X-ray diffraction studies indicate that the structure of the films is very different on the two substrates, even though the surface of both substrates is amorphous. The hardness and elastic modulii of the films on oxidized Si are slightly higher than those of the films deposited on Coming glass substrate, even at indentation depths where substrate effects are considered to be negligible. A substantial increase in hardness (5–10 GPa) was observed for TiB2 films, when compared to the properties of bulk stoichiometric TiB2. Stress- temperature diagrams determined from room temperature to 250 C indicate that all the films prepared in this study display a pure elastic behavior in that temperature range.

Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences

2014 ◽  
Vol 28 (26) ◽  
pp. 1450210 ◽  
Author(s):  
Zhong Hua ◽  
Xiangcheng Meng ◽  
Yaming Sun ◽  
Wanqiu Yu ◽  
Dong Long
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Stacking Order ◽  
Microstructure Morphology ◽  
Hall Effect Measurements ◽  
Uv Visible

The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.

Microstructure and Mechanical Properties of Cr1-xAlxN Coating

2012 ◽  
Vol 531 ◽  
pp. 3-6
Author(s):  
C.L. Zhong ◽  
L.E. Luo
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Lattice Parameter ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Al Content ◽  
Compound Coating ◽  
Cubic Structure

A series of Cr1-xAlxN coatings were deposited by reactive magnetron sputtering. The content, microstructure and the hardness of the thin films were characterized respectively with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and nanoindentor. The effect of Al content on the microstructure and hardness was studied. It was found that Cr1-xAlxN compound coating exhibits a cubic structure with (1 1 1) preferred orientations and that the lattice parameter of Cr1-xAlxN coatings decrease with the increase of Al content. The hardness of Cr1-xAlxN compound coating is higher than that of CrN and increases with the increase of Al content.

X-ray reflectivity and diffraction investigation on TiN/SiNx nanolayered coatings deposited by magnetron sputtering

2007 ◽  
Vol 22 (4) ◽  
pp. 316-318
Author(s):  
Tao An ◽  
Hongwei Tian ◽  
Weitao Zheng
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Multilayer Coatings ◽  
Substrate Bias ◽  
Reactive Magnetron ◽  
Maximum Hardness ◽  
X Ray Diffraction ◽  
Substrate Bias Voltage ◽  
X Ray ◽  
Sharp Interfaces

Polycrystalline TiN/SiNx multilayer coatings were deposited by reactive magnetron sputtering from Ti and Si targets. Interfaces, structures, and mechanical properties of the multilayers were characterized using X-ray reflectivity (XRR), X-ray diffraction (XRD), and nanoindentation analyses. Results showed that substrate bias voltage had a significant influence on the structures and mechanical properties of the multilayer coatings, in which sharp interfaces are responsible for an enhancement of mechanical properties of the multilayer coatings. The maximum hardness occurs at the −80 V coating with the sharpest interface and the strongest [200] preferred orientation.

Microstructure, Mechanical Properties and Thermal Stability of TiAlN/Si3N4 Nano-Multilayer Films Deposited by Reactive Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 489-492
Author(s):  
Jiang Ling Yue ◽  
Yan Sheng Yin ◽  
Ge Yang Li
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Multilayer Films ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si3n4 Layer ◽  
Superlattice Structure

A series of TiAlN/Si3N4 nano-multilayer films with various Si3N4 layer thicknesses were prepared by reactive magnetron sputtering. These multilayers were then annealed at temperatures ranging from 600 to 900°C in air for 1 hour. The composition, microstructure, and mechanical properties of the films were characterized by energy dispersive x-ray spectroscopy, x-ray diffraction, scanning electron microscopy, and nanoindentation. It reveals that under the template effect of TiAlN layers in multilayers, as-deposited amorphous Si3N4 is crystallized and grows coherently with TiAlN layers when Si3N4 layer thickness is below 0.6 nm. Correspondingly, the hardness and elastic modulus of the multilayers increase significantly. With further increase in the layer thickness, Si3N4 transforms into amorphous, resulting in a decrease of hardness and modulus. The TiAlN/Si3N4 nano-multilayers could retain their superlattice structure even up to 900°C. The small decrease in the hardness of multilayers annealed below 800°C was correlated to the release of compressive stress in multilayers. However, oxidation was found on the surface of multilayers when annealed at 800°C, which resulted in a marked decrease in the hardness of multilayers. The multilayers presented higher hardness as compared with the monolithic TiAlN film.

RAMAN AND OPTOELECTRONIC PROPERTIES OF Zn1-xMgxO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2011 ◽  
Vol 18 (05) ◽  
pp. 189-195 ◽  
Author(s):  
Q. L. HUANG ◽  
L. FANG ◽  
H. B. RUAN ◽  
B. D. GUO ◽  
F. WU ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Frequency Shifts ◽  
X Ray ◽  
Mg Doping ◽  
Glass Substrates ◽  
Structure Surface ◽  
Mg Content

A series of Zn 1-x Mg x O (x = 0 ~ 0.16) films have been prepared on glass substrates by RF magnetron sputtering. The structure, surface morphology, composition, optical and electrical properties of the films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), Raman spectroscopy, UV-Vis spectrophotometer and Hall measurement, respectively. It reveals that the obtained films are uniform hexagonal wurtzite polycrystalline with grain size about 100 nm.The optical transmittance are over 80% and the band gap (Eg) has linear relationship with Mg content: Eg = 1.67x + 3.274 (eV) (0 < x < 0.16). The resistivity of the films increases with the increase of Mg content. The Raman spectra of the films show that the position of E2 peaks (473 cm-1) has not changed, but the A1(LO) mode (577 cm-1) frequency shifts to lower wavenumbers with the increase of Mg content, indicating that Mg -doping does not cause intensive lattice deformation, but results in the decrease of the carrier concentration, which is corresponding to the degradation of the conductivity of ZnMgO films with the increase of Mg content.

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