Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering

2007 ◽  
Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Tin Oxide ◽  
Reactive Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.

Influence of Ar/O2 Ratio on the Prpoperties of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering

2011 ◽  
Vol 335-336 ◽  
pp. 964-967
Author(s):  
Hua Fu Zhang ◽  
Xin Feng Wang
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Dc Reactive Magnetron Sputtering ◽  
Probe Measurements

Transparent conducting ZnO:Zr thin films were deposited on glass substrates by DC reactive magnetron sputtering in Ar+O2ambience with different Ar/O2 ratios. The structural, electrical and optical properties of ZnO:Zr films were analyzed by X-ray diffraction, four-point probe measurements and UV–vis spectrophotometers. When Ar/O2ratio increases from 20:1 to 25:1, the resistivity significantly decreases because of the improvement of the crystallinity. However, with further increase in Ar/O2ratio, the crystallinity begins to deteriorate resulting in an increase in the resistivity. The films deposited at the optimum Ar/O2ratio of 25:1 have the minimum resistivity of 1.4×10-3Ω•cm and a high transmittance of above 92%.

Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS)

1995 ◽  
Vol 405 ◽  
Author(s):  
S. M. Cho ◽  
K. Christensen ◽  
D. Wolfe ◽  
H. Ying ◽  
D. R. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Substrate Surface ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Film Microstructure ◽  
Substrate Surfaces

AbstractWe have investigated on the effect of different substrate surfaces in changing the microstructure of μc-SixGe1-x:H films prepared by reactive magnetron sputtering. Films were deposited on hydrogen terminated Si(111), Si(100) surfaces, and surfaces chemical and plasma oxides. The thin film microstructure was characterized by Fourier transform infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and Raman scattering.

Microstructure, Mechanical Properties and Thermal Stability of TiAlN/Si3N4 Nano-Multilayer Films Deposited by Reactive Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 489-492
Author(s):  
Jiang Ling Yue ◽  
Yan Sheng Yin ◽  
Ge Yang Li
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Multilayer Films ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si3n4 Layer ◽  
Superlattice Structure

A series of TiAlN/Si3N4 nano-multilayer films with various Si3N4 layer thicknesses were prepared by reactive magnetron sputtering. These multilayers were then annealed at temperatures ranging from 600 to 900°C in air for 1 hour. The composition, microstructure, and mechanical properties of the films were characterized by energy dispersive x-ray spectroscopy, x-ray diffraction, scanning electron microscopy, and nanoindentation. It reveals that under the template effect of TiAlN layers in multilayers, as-deposited amorphous Si3N4 is crystallized and grows coherently with TiAlN layers when Si3N4 layer thickness is below 0.6 nm. Correspondingly, the hardness and elastic modulus of the multilayers increase significantly. With further increase in the layer thickness, Si3N4 transforms into amorphous, resulting in a decrease of hardness and modulus. The TiAlN/Si3N4 nano-multilayers could retain their superlattice structure even up to 900°C. The small decrease in the hardness of multilayers annealed below 800°C was correlated to the release of compressive stress in multilayers. However, oxidation was found on the surface of multilayers when annealed at 800°C, which resulted in a marked decrease in the hardness of multilayers. The multilayers presented higher hardness as compared with the monolithic TiAlN film.

X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Oxide Films ◽  
Dc Reactive Magnetron Sputtering

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

Microstructure and Oxidation Resistance of TiN Coatings

2013 ◽  
Vol 750-752 ◽  
pp. 2092-2095 ◽  
Author(s):  
Guo Zheng Nie ◽  
Chun Liang Zhong ◽  
Lan E Luo ◽  
Ren Long Zhou ◽  
Qiang Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxidation Resistance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Tin Coating ◽  
X Ray ◽  
Tin Coatings ◽  
Cubic Structure

A series of TiN coatings were deposited by reactive magnetron sputtering with different target powers and different N2flows. The microstructure and oxidation resistance of TiN coatings were characterized by X-ray diffraction (XRD). The hardness of the thin films was characterized respectively with the nanoindentor. The effect of target powers and the N2flows on the microstructure, the hardness and oxidation resistance was studied. It was found that TiN coating deposited at different target powers and different N2flows exhibits a cubic structure with (1 1 1) preferred orientations, and the hardness of TiN coatings is 1200. The oxidation resistance of the TiN coatings is approximately 500°C.

Properties of TiO2/TiOx Active Layers and Fabrication Resistive Switching Device

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940085
Author(s):  
A. Bibilashvili ◽  
Z. Kushitashvili
Keyword(s):  
Magnetron Sputtering ◽  
Structural Properties ◽  
Resistive Switching ◽  
Reactive Magnetron Sputtering ◽  
Titanium Oxides ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Switching Device ◽  
X Ray ◽  
Active Layers

The electrical and structural properties of titanium oxides TiO2/TiOx fabricated by reactive magnetron sputtering were studied and used in a memristor. X-ray diffraction and [Formula: see text]–[Formula: see text] measurements were performed in order to characterize the fabricated structures.

STUDY ON MICROSTRUCTURE AND PROPERTY OF Pt-DOPED WO3 FILMS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3489-3492
Author(s):  
YINFENG WANG ◽  
ANPING LIU ◽  
XUEHENG YANG ◽  
XIAOPING SU
Keyword(s):  
Magnetron Sputtering ◽  
Change Process ◽  
Sol Gel ◽  
Composite Films ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gel Film ◽  
Dc Reactive Magnetron Sputtering

We have prepared Pt -doped WO 3 composite films by sol-gel compounding and DC reactive magnetron sputtering respectively. Spectra change process according to the absorbing hydrogen time has been characterized by UV-VIS, X-ray diffraction spectra of two kinds of samples have been studied in this paper, and the crystallization temperature of film has been observed at the same time. As a result, both two WO 3 composite films are better sensitive to hydrogen by Pt -doping and the Pt sputtered sol-gel film has faster response to hydrogen than the Pt sputtered film by DC reactive magnetron sputtering, but the changes of luminousness are almost equal for two films.

STRUCTURAL PROPERTIES OF AlN FILMS WITH OXYGEN CONTENT DEPOSITED BY REACTIVE MAGNETRON SPUTTERING: XRD AND XPS CHARACTERIZATION

2011 ◽  
Vol 18 (01n02) ◽  
pp. 23-31 ◽  
Author(s):  
MANUEL GARCÍA-MÉNDEZ ◽  
SANTOS MORALES-RODRÍGUEZ ◽  
SADASIVAN SHAJI ◽  
BINDU KRISHNAN ◽  
PASCUAL BARTOLO-PÉREZ
Keyword(s):  
Magnetron Sputtering ◽  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Preferential Growth ◽  
X Ray ◽  
Xps Characterization ◽  
Oxide Phases

A set of aluminium nitride ( AlN ) and oxidized AlN ( AlNO ) thin films were grown with the technique of direct current (dc) reactive magnetron sputtering. The main purpose of this investigation is to explore the influence of the oxygen on the structural properties of AlN and AlNO films. The crystalline properties and chemical identification of phases were studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Electrical properties were analyzed from I-V measurements. It was found that films crystallized under the AlN würzite structure and presented a polycrystalline preferential growth along [0001] direction, perpendicular to substrate. Small amounts of secondary aluminium oxide phases were detected too. The oxide phases can induce defects, which can alter crystallinity of films.

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