Integration Of BPDA-PDA Polyimide With Two Levels Of Al(Cu) Interconnects

1995 ◽  
Vol 381 ◽  
Author(s):  
J. T. Wetzel ◽  
Y. T. Lii ◽  
S. M. Filipiak ◽  
B.-Y. Nguyen ◽  
E. O. Travis ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Performance Improvement ◽  
Process Integration ◽  
Moisture Management ◽  
Circuit Delay ◽  
Lower Dielectric Constant ◽  
Out Of Plane ◽  
Scale Down ◽  
Capacitive Loading ◽  
Intermetal Dielectric

AbstractAs device geometries continue to scale down, a larger portion of the circuit delay is contributed by interconnects, and the majority of this delay is due to capacitive loading. The replacement of plasma-deposited SiO2 as an intermetal dielectric with an insulator of lower dielectric constant can provide performance improvement through the reduction of capacitance.A commercially available polyimide, BiPhenylene DiAnhydride – Phenylene DiAmine, BPDA-PDA, with an out-of-plane dielectric constant 3.0, is evaluated by integration with AI(Cu) in a double level metal, BiCMOS 4MB SRAM device, with 0.5μm groundrules. Process challenges unique to integration of an organic rather than inorganic insulator are described and experimental features concerning process integration, particularly via etch, Al(Cu) deposition, adhesion and moisture management are presented.

Process Integration Of Low-Dielectric-Constant Materials

1995 ◽  
Vol 381 ◽  
Author(s):  
Shin-Puu Jeng ◽  
Kelly Taylor ◽  
Mi-Chang Chang ◽  
Larry Ting ◽  
Charles Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Process Integration ◽  
Polymeric Materials ◽  
Integration Scheme ◽  
Operating Voltage ◽  
Low Dielectric ◽  
Lower Dielectric Constant ◽  
Low Dielectric Constant Materials ◽  
Intermetal Dielectric ◽  
Standard Production

AbstractAs device geometries and operating voltage continue to scale while functional density increases, it is imperative to reduce the RC time delay. The replacement of Si0 2 as an intermetal dielectric with an insulator of lower dielectric constant is a particularly attractive solution since it provides immediate performance improvement through reduction in capacitance. An embedded polymer integration scheme improves the interconnect performance through line-to-line capacitance reduction by using polymer only between tightly spaced lines. The gapfill polymeric materials do not degrade the electromigration performance of standard multilayered TiN/Al/TiN interconnects. Embedded polymers alleviate many of the integration and reliability problems associated with polymer integration, and can be easily adopted into a standard production process.

Electrical Extraction of The in-Plane Dielectric Constant of Fluorinated Polyimide

1997 ◽  
Vol 476 ◽  
Author(s):  
Alvin L.S. Loke ◽  
Jeffrey T. Wetzel ◽  
John J. Stankus ◽  
S. Simon Wong
Keyword(s):  
Dielectric Constant ◽  
Electric Fields ◽  
Signal Propagation ◽  
Propagation Delay ◽  
Dielectric Constants ◽  
Effective Dielectric Constant ◽  
Fluorinated Polyimide ◽  
Lower Dielectric Constant ◽  
Out Of Plane ◽  
Fringing Fields

AbstractFluorinated polyimide can potentially replace TEOS as an interlevel dielectric in future ULSI interconnect technologies because its lower dielectric constant offers reduced crosstalk, signal propagation delay, and dynamic power dissipation. One issue associated with polyimides is the anisotropy in dielectric constant, where the smaller out-of-plane dielectric constant, typically measured using parallel-plate capacitors, can misleadingly exaggerate the advantage in reducing crosstalk. In this paper, we present a novel electrical technique to estimate the in-plane dielectric constant of DuPont FPI-136M fluorinated polyimide without requiring dielectric gapfill.A blanket FPI-136M film is deposited over interdigitated inlaid Al(0.5%Cu) structures and the crosstalk capacitance is measured. Identical inlaid structures with air and TEOS passivations are also measured for capacitance calibration. Differences in measured capacitances reflect electric fields fringing in the various passivation dielectrics above the inlaid metal. With the known dielectric constants of air and TEOS, the effective dielectric constant of FPI-136M is interpolated to be 2.8. Interconnect simulations confirm that the effective dielectric constant extraction technique is valid and accurate provided that the passivation layer is sufficiently thick to contain the fringing fields.To estimate the in-plane dielectric constant, we use simulations to determine the combination of in-plane and out-of-plane dielectric constants that is equivalent to the extracted effective dielectric constant. With an out-of-plane dielectric constant of 2.6, the in-plane dielectric constant of FPI-136M is estimated to be 3.0. This technique is applicable to other dieletrics.

Characterization of Unfilled Tungsten Plugs on a 0.35μm CMOS Multilevel Metallization Process

1996 ◽  
Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn
Keyword(s):  
Process Development ◽  
Process Integration ◽  
Wafer Level ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Integration Approach ◽  
Intermetal Dielectric ◽  
Metallization Process ◽  
Section Analysis

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.

scholarly journals Generating high dielectric constant blends from lower dielectric constant dipolar polymers using nanostructure engineering

Nano Energy ◽  
2017 ◽  
Vol 32 ◽  
pp. 73-79 ◽  
Author(s):  
Yash Thakur ◽  
Bing Zhang ◽  
Rui Dong ◽  
Wenchang Lu ◽  
C. Iacob ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Lower Dielectric Constant ◽  
High Dielectric

scholarly journals The Effects of SLS on Structural and Complex Permittivity of SLS-HDPE Composites

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Abubakar Dantani Meli ◽  
Zulkifly Abbas ◽  
Mohd Hafiz Mohd Zaid ◽  
Nor Azowa Ibrahim
Keyword(s):  
Dielectric Constant ◽  
Complex Permittivity ◽  
Loss Factor ◽  
Microwave Frequency ◽  
Soda Lime ◽  
Physical Structure ◽  
Host Matrix ◽  
Lower Dielectric Constant ◽  
Absorbing Material ◽  
Diffraction Patterns

RS-4050 is a rigid epoxy based magnetic castable microwave absorbing material; it has been used in many areas of waveguide application as a microwave waveguide terminations and dummy loads. In recent years, there is a demand for composites material with lower dielectric constant higher loss factor for microwave application. This research, the effect of soda lime silica (SLS) on structural and complex permittivity of soda lime silica-high density polyethylene (SLS-HDPE) composites was conducted in order to explore the possibility of substituting RS-4050 with SLS-HDPE composites as a microwave waveguide terminations and dummy loads. Elemental weight composition of the SLS glass powder and HDPE was identified through scaling of different percentage of SLS and HDPE. X-ray diffraction (XRD) was used to investigate the crystallinity behavior of SLS-HDPE composites. The proposed SLS-HDPE composites material was studied at frequencies 8 to 12 GHz. The study was conducted using waveguide Agilent N5230A PNA technique. The effect of microwave frequency on complex permittivity properties for SLS-HDPE composites of different percentages of SLS and HDPE (10% SLS-90% HDPE, 20% SLS-80% HDPE, 30% SLS-70% HDPE, 40% SLS-60% HDPE, and 50% SLS-50% HDPE) were investigated. Results showed the diffraction patterns reveal good amorphous quality with a genuinely properties structure. The microwave frequency and composites percentages significantly influenced the complex permittivity (real and imaginary) properties of the composites. Moreover, the complex permittivity increased as the percentage of SLS filler increased in the host matrix HDPE as a result of increased in composite density due to less volume being occupied by the filler as the percentage increased. The complex permittivity of the smallest and largest percentages of SLS (10% and 50%) was (2.67-j0.05) and (3.45-j0.35), respectively. The study revealed that the best sample for waveguide application as microwave terminator is 50% SLS as it has the highest dielectric constant, highest loss factor, and highest loss tangent as compared to 10% SLS to 40% SLS. Also 50% SLS has the highest absorption properties as compare to 10% SLS, 20% SLS, 30% SLS, or 40% SLS. The XRD physical structure of the SLS-HDPE composites revealed the absorption characteristics of different percentages of the materials. The SLS-HDPE composites can be applied in the area of waveguide as a microwave waveguide terminations and dummy loads.

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

scholarly journals Space Charge and Electric Field Analysis on Contaminated XLPE Insulator

2018 ◽  
Vol 12 (1) ◽  
pp. 370
Author(s):  
M.H.A. Wahab ◽  
N. A. M. Jamail ◽  
E. Sulaiman ◽  
Q.E. Kamarudin ◽  
N.A. Othman ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Space Charge ◽  
Dielectric Strength ◽  
Field Analysis ◽  
Ethylene Dichloride ◽  
Xlpe Cable ◽  
Lower Dielectric Constant ◽  
High Dielectric ◽  
Xlpe Insulation

<p>Nowadays, XLPE cable has been widely used because it has better resistance than other cables. XLPE insulation has unique features including a high dielectric strength and high insulation resistance. A lot of researches based on hardware and software have been conducted to prove the effectiveness of XLPE cable such as AC and DC applications and Space Charge Distribution measurement under HVDC at High Temperature. This research focused on analysis of space charge and electric field on XLPE cable with effect of non-uniform contamination layer by using Quickfield Software. Non-uniform contaminations have been applied along XLPE cable using Arsenic Tribromide (AsBr3), Boron Bromide (BBr3), Ethylene Dichloride (CH2C1), Formic Acid (CH1O2), Formamide (CH3NO) and Alcohol element. Presence of these contamination elements represent of underground contamination. The size and layer of the contamination were non-uniform type. From the results, it is shown that lower dielectric constant of contamination will affect more on charge of XLPE insulation. As a conclusion, it can be seen lower dielectric constant value of contamination element greatly affecting the performance of XLPE insulation. Furthermore, size of contamination also influences the content of charge in contamination where the bigger the contamination size, the more charge contained in the contamination.</p>

scholarly journals Managing contamination delay to improve Timing Speculation architectures

2016 ◽  
Vol 2 ◽  
pp. e79 ◽  
Author(s):  
Naga Durga Prasad Avirneni ◽  
Prem Kumar Ramesh ◽  
Arun K. Somani
Keyword(s):  
Performance Improvement ◽  
Short Path ◽  
Performance Enhancement ◽  
Propagation Delay ◽  
Performance Impact ◽  
Worst Case ◽  
Circuit Delay ◽  
Timing Speculation ◽  
Better Than

Timing Speculation (TS) is a widely known method for realizing better-than-worst-case systems. Aggressive clocking, realizable by TS, enable systems to operate beyond specified safe frequency limits to effectively exploit the data dependent circuit delay. However, the range of aggressive clocking for performance enhancement under TS is restricted by short paths. In this paper, we show that increasing the lengths of short paths of the circuit increases the effectiveness of TS, leading to performance improvement. Also, we propose an algorithm to efficiently add delay buffers to selected short paths while keeping down the area penalty. We present our algorithm results for ISCAS-85 suite and show that it is possible to increase the circuit contamination delay by up to 30% without affecting the propagation delay. We also explore the possibility of increasing short path delays further by relaxing the constraint on propagation delay and analyze the performance impact.

scholarly journals Preparation and characterization of novel naphthyl epoxy resin containing 4-fluorobenzoyl side chains for low-k dielectrics application

RSC Advances ◽  
2017 ◽  
Vol 7 (85) ◽  
pp. 53970-53976 ◽  
Author(s):  
Tianyi Na ◽  
Hao Jiang ◽  
Liang Zhao ◽  
Chengji Zhao
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Epoxy Resin ◽  
Epoxy Resins ◽  
Side Chains ◽  
The Novel ◽  
Lower Dielectric Constant ◽  
Low K

The novel naphthyl epoxy resin was synthesized and cured with MeHHPA. It showed significantly lower dielectric constant and dielectric loss than other commercial epoxy resins due to the introduction of fluorine on the side chains.

scholarly journals Anomalously low dielectric constant of confined water

Science ◽  
2018 ◽  
Vol 360 (6395) ◽  
pp. 1339-1342 ◽  
Author(s):  
L. Fumagalli ◽  
A. Esfandiar ◽  
R. Fabregas ◽  
S. Hu ◽  
P. Ares ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Bulk Water ◽  
Dead Layer ◽  
Low Dielectric Constant ◽  
Interfacial Water ◽  
Confined Water ◽  
Low Dielectric ◽  
Out Of Plane ◽  
Atomically Flat ◽  
Rotational Freedom

The dielectric constant ε of interfacial water has been predicted to be smaller than that of bulk water (ε ≈ 80) because the rotational freedom of water dipoles is expected to decrease near surfaces, yet experimental evidence is lacking. We report local capacitance measurements for water confined between two atomically flat walls separated by various distances down to 1 nanometer. Our experiments reveal the presence of an interfacial layer with vanishingly small polarization such that its out-of-plane ε is only ~2. The electrically dead layer is found to be two to three molecules thick. These results provide much-needed feedback for theories describing water-mediated surface interactions and the behavior of interfacial water, and show a way to investigate the dielectric properties of other fluids and solids under extreme confinement.

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