Electrical Extraction of The in-Plane Dielectric Constant of Fluorinated Polyimide

1997 ◽  
Vol 476 ◽  
Author(s):  
Alvin L.S. Loke ◽  
Jeffrey T. Wetzel ◽  
John J. Stankus ◽  
S. Simon Wong

AbstractFluorinated polyimide can potentially replace TEOS as an interlevel dielectric in future ULSI interconnect technologies because its lower dielectric constant offers reduced crosstalk, signal propagation delay, and dynamic power dissipation. One issue associated with polyimides is the anisotropy in dielectric constant, where the smaller out-of-plane dielectric constant, typically measured using parallel-plate capacitors, can misleadingly exaggerate the advantage in reducing crosstalk. In this paper, we present a novel electrical technique to estimate the in-plane dielectric constant of DuPont FPI-136M fluorinated polyimide without requiring dielectric gapfill.A blanket FPI-136M film is deposited over interdigitated inlaid Al(0.5%Cu) structures and the crosstalk capacitance is measured. Identical inlaid structures with air and TEOS passivations are also measured for capacitance calibration. Differences in measured capacitances reflect electric fields fringing in the various passivation dielectrics above the inlaid metal. With the known dielectric constants of air and TEOS, the effective dielectric constant of FPI-136M is interpolated to be 2.8. Interconnect simulations confirm that the effective dielectric constant extraction technique is valid and accurate provided that the passivation layer is sufficiently thick to contain the fringing fields.To estimate the in-plane dielectric constant, we use simulations to determine the combination of in-plane and out-of-plane dielectric constants that is equivalent to the extracted effective dielectric constant. With an out-of-plane dielectric constant of 2.6, the in-plane dielectric constant of FPI-136M is estimated to be 3.0. This technique is applicable to other dieletrics.

1991 ◽  
Vol 227 ◽  
Author(s):  
D. Boese ◽  
S. Herminghaus ◽  
D. Y. Yoon ◽  
J. D. Swalen ◽  
J. F. Rabolt

ABSTRACTThin films of poly(p-phenylene biphenyltetracarboximide), prepared by thermal imidization of the precursor poly(amic acid) on substrates, have been investigated by optical waveguide, UV-visible, infrared (IR), and dielectric spectroscopies. The polyimide films exhibit an extraordinarily large anisotropy in the refractive indices with the in-plane index n║ = 1.852 and the out-of-plane index n┴ = 1.612 at 632.8 nm wavelength, indicating a strong preference of polymer chains to orient along the film plane. No discernible effect of the film thickness on this optical anisotropy is found in the range of ca. 0.4 μm to 7.8 μm in thickness. The frequency dispersion of the in-plane refractive index to 1.06 μm wavelength is consistent with the results calculated by the Lorentz-Lorenz equation from the UV-visible spectrum. The contribution from the entire IR range from 7000 to 200 cm,−1 computed by the Spitzer-Kleinmann dispersion relations from the measured spectra, adds ca. 0.07 to the in-plane refractive index n║. Approximately the same increase is assumed for the out-of-plane index n┴, based on the tilt-angle dependent IR results. Application of the Maxwell relation leads to the out-of-plane dielectric constant ε┴≃2.8 at ca. 1013 Hz, as compared with the measured value of ca. 3.0 at 106 Hz. Assuming this small difference to remain the same for the in-plane dielectric constants ε║, we obtain a a very large anisotropy in the dielectric properties of these polyimide films with the estimated in-plane dielectric constant ε║≃3.5 at ca. 1013 Hz, and ε.≃3.7 at 106 Hz.


1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.


Paliva ◽  
2021 ◽  
pp. 118-122
Author(s):  
David Dašek ◽  
Petr Roztočil ◽  
Jan Macák

The presented study concerns with the corrosion kinetics of two zirconium alloys: Zr-Nb-Sn-Fe and Zr-Nb-Fe. Alloy samples were pre-exposed at 360 °C in a LiOH solution containing 70 mg/l of lithium ions. Ex-situ electrochemical impedance spectroscopy (EIS) performed in 0.5 M potassium sulphate solution at 25 °C was used to study the properties of the oxide and kinetic transient effect. Evaluation of the impedance spectroscopy data was based on application of a simple equivalent circuit. The setup of the equivalent circuit conformed to Jonscher´s universal law of dielectric response. The analysis of the impedance data was aimed at estimation of non-dispersive capacitance of the oxide formed during the pre-exposure. Effective values of dielectric constant were calculated using the non-dispersive capacitance and the oxide thickness values, calculated from weight gains. For the pre-transient samples relatively higher values of dielectric constants were obtained. Typical pre-transient dielectric constants for Zr-Nb-Sn-Fe alloy ranged between 20–21, while slightly lower values were obtained for Zr-Nb-Fe alloy. In both alloys steep and significant decrease in effective dielectric constant (e_ef = 9–13) was found for the transient samples. The decrease correlated very well with the drop in percentage of tetragonal oxide determined by Raman spectroscopy and corresponded to the increase of the weight gains of the transient samples. Literature data indicate values of dielectric constants for tetragonal zirconium oxide between 38–46, while those for monoclinic oxide are usually presented between 12–22. The evidenced changes in dielectric constants are therefore in agreement with the expected decrease of tetragonal phase fraction in the oxide layer during the transient. In the Zr-Nb-Sn-Fe post-transient samples values of dielectric constant increased again to 18–20, therefore almost to the pre-transient level. This increase was not evidenced with Raman spectroscopy data, which show constant low content of the tetragonal fraction. Possible explanation of this disagreement is the location of the newly formed post-transient tetragonal oxide presumably at the metal/oxide interface. Oxide thickness of the post-transi-ent samples is 4–7 m and the oxide/metal interface is beyond access of the laser beam of Raman spectrometer. We can conclude that using ex-situ EIS, the transient was observable in both alloys; the change in the ratio of monoclinic and tetragonal phase can be evaluated based on the difference of effective dielectric constant of the two phases. The Zr-Nb-Sn-Fe alloy showed the onset of the transient after the 105th day of pre-exposure, but the change in the ratio of the monoclinic and tetragonal phases was less significant than in the Zr-Nb-Fe alloy, in which, however, the transient could be observed only after 147 days of pre-exposure. The resulting values of the effective dielectric constant of oxides correlated well with the percentage of tetragonal oxide determined by Raman spectroscopy and with the results of the weight gain method.


2013 ◽  
Vol 52 (1) ◽  
pp. 197-212 ◽  
Author(s):  
Liang Liao ◽  
Robert Meneghini

AbstractThe validity of the effective dielectric constant ɛeff for nonspherical mixed-phase particles is tested by comparing the scattering parameters of ice–water mixtures for oblate and prolate spheroids obtained from the conjugate-gradient and fast Fourier transform (CGFFT) numerical scheme with those computed from the T matrix for a homogeneous particle with the derived ɛeff with the same size, shape, and orientation as that of the mixed-phase particle. The accuracy of the effective dielectric constant is evaluated by examining whether the scattering parameters of interest can reproduce those of the direct computations, that is, the CGFFT results. Computations have been run over a range of prolate and oblate spheroids of different axial ratios up to size parameters of 4. It is found that the effective dielectric constant, obtained from realizations of small particles, can be applied to a class of particle types if the fractional water content remains the same. Analysis of the results indicates that the effective dielectric constant approach is useful in computing radar and radiometer polarimetric scattering parameters of nonspherical mixed-phase particles.


Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3104
Author(s):  
Damien Richert ◽  
José Morán-Meza ◽  
Khaled Kaja ◽  
Alexandra Delvallée ◽  
Djamel Allal ◽  
...  

The importance of high dielectric constant materials in the development of high frequency nano-electronic devices is undeniable. Their polarization properties are directly dependent on the value of their relative permittivity. We report here on the nanoscale metrological quantification of the dielectric constants of two high-κ materials, lead zirconate titanate (PZT) and lead magnesium niobate-lead titanate (PMN-PT), in the GHz range using scanning microwave microscopy (SMM). We demonstrate the importance of the capacitance calibration procedure and dimensional measurements on the weight of the combined relative uncertainties. A novel approach is proposed to correct lateral dimension measurements of micro-capacitive structures using the microwave electrical signatures, especially for rough surfaces of high-κ materials. A new analytical expression is also given for the capacitance calculations, taking into account the contribution of fringing electric fields. We determine the dielectric constant values εPZT = 445 and εPMN-PT = 641 at the frequency around 3.6 GHz, with combined relative uncertainties of 3.5% and 6.9% for PZT and PMN-PT, respectively. This work provides a general description of the metrological path for a quantified measurement of high dielectric constants with well-controlled low uncertainty levels.


2011 ◽  
Vol 2011 (1) ◽  
pp. 000544-000552
Author(s):  
Deepukumar M. Nair ◽  
James Parisi ◽  
K.M. Nair ◽  
Mark McCombs ◽  
Michael Smith ◽  
...  

Low Temperature Co-fired Ceramic (LTCC) material systems have been successfully used in microwave and millimeter wave systems for several years. LTCC has very low dielectric loss, high reliability due to inherent hermeticity; high interconnect density, multilayer processing capability leading to true 3D packaging, and better cost-performance balance. While the medium range dielectric constants (7.00 – 8.00) offered by current tape systems have advantages, it is generally difficult to realize high speed systems and efficient antennas on LTCC, especially at millimeter wave frequencies. The difficulty arises from the reduced signal propagation velocity in high-speed applications, and lower radiation efficiency for antennas, both due to higher dielectric constant. To enable and extend applications of LTCC technology to these subsystems, DuPont has developed a new low dielectric constant LTCC system – DuPont™ GreenTape™ 9K5 - which has a dielectric constant of 5.80 (at 10 GHz) that is compatible with the commercial DuPont™ GreenTape™ 9K7 LTCC System. This is achieved without compromising excellent microwave loss properties of the 9KX GreenTape™ platform. These materials systems enable high-speed, high reliability applications while also realizing efficient antennas on LTCC. This paper presents initial characterization of the new DuPont™ GreenTape™ 9K5 LTCC system consisting of low K dielectric tape, gold and silver conductors to evaluate the effects of chemistry, processing conditions, processing latitude, microstructure, and microwave performance. Test coupons with various transmission and resonating structures are designed, fabricated, and tested for the evaluation of transmission losses and dielectric properties. Stability of the material system over multiple re-fire steps is also examined


2002 ◽  
Vol 755 ◽  
Author(s):  
Mai T.N. Pham ◽  
B.A. Boukamp ◽  
H.J.M. Bouwmeester ◽  
D.H.A. Blank

ABSTRACTComposites between ferroelectric material and a dispersed metal phase are of great interest due to the improvement in dielectric properties for such applications as high capacitance capacitors, non-volatile memory, ect. Using a colloidal method, Pt particles with a size of 3–5 nm were dispersed homogeneously in a PZT (PbZr0.53Ti0.43O3) matrix. No unwanted reaction phase between PZT and Pt during sintering at 1150 °C could be detected by X-ray diffraction. Electrical properties were investigated by impedance spectroscopy measurement. The effective dielectric constant increased remarkably as a power function of Pt volume content and can be described by the percolation theory. At 25 vol.% of Pt the dielectric constant of the composite is 4 times larger than that of pure PZT. The temperature dependence of the electrical properties is also influenced by the metallic phase fraction.


1995 ◽  
Vol 381 ◽  
Author(s):  
J. T. Wetzel ◽  
Y. T. Lii ◽  
S. M. Filipiak ◽  
B.-Y. Nguyen ◽  
E. O. Travis ◽  
...  

AbstractAs device geometries continue to scale down, a larger portion of the circuit delay is contributed by interconnects, and the majority of this delay is due to capacitive loading. The replacement of plasma-deposited SiO2 as an intermetal dielectric with an insulator of lower dielectric constant can provide performance improvement through the reduction of capacitance.A commercially available polyimide, BiPhenylene DiAnhydride – Phenylene DiAmine, BPDA-PDA, with an out-of-plane dielectric constant 3.0, is evaluated by integration with AI(Cu) in a double level metal, BiCMOS 4MB SRAM device, with 0.5μm groundrules. Process challenges unique to integration of an organic rather than inorganic insulator are described and experimental features concerning process integration, particularly via etch, Al(Cu) deposition, adhesion and moisture management are presented.


1996 ◽  
Vol 19 (2) ◽  
pp. 119-123
Author(s):  
Prem Bhushan Mital

The effect of plasma on the radiation characteristics of curved rectangular microstrip antenna is studied by means of a new plasma simulation technique. Unlike previous techniques [1,2], a relative index of refraction less than unity is obtained by representing free space with a high dielectric constant sodium chloride powder and plasma by a medium of lower dielectric constant (air). A wide range of dielectric constants of simulated plasma could be possible with this technique using solid dielectrics instead of liquids. It is observed that the resonance frequency is not affected by the curvature of the antenna. However radiation patterns are significantly affected.


2018 ◽  
Vol 6 (24) ◽  
pp. 6378-6384 ◽  
Author(s):  
Xiaodong Yin ◽  
Yiyu Feng ◽  
Qiang Zhao ◽  
Yu Li ◽  
Shuangwen Li ◽  
...  

Transparent and flexible fluorinated polyimide films with loading of well-dispersed fluorographene exhibit low dielectric constants.


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