Studies of Plasma O Atom Concentration by Two-Photon Laser Induced Fluorescence and Optical Emission Spectroscopy

1984 ◽  
Vol 38 ◽  
Author(s):  
R. Walkup ◽  
K. Saenger ◽  
G. S. Selwyn
Keyword(s):  
Optical Emission ◽  
Quantitative Relationship ◽  
Laser Induced Fluorescence ◽  
Plasma Parameters ◽  
Atom Concentration ◽  
Rf Plasmas ◽  
Excited Atoms ◽  
Two Photon ◽  
Spatially Resolved ◽  
Quantitative Measurements

AbstractWe report quantitative measurements of the concentration of atomic oxygen in RF plasmas determined by two-photon laser induced fluorescence. The results are compared with concurrent measurements of spatially resolved plasma induced optical emission. These measurements establish: (1) the O atom concentration as a function of plasma parameters, (2) a semi-quantitative relationship between O* emission intensity normalized by Ar* in-tensity and O atom concentration, and (3) an understanding of the mechanisms for pro-duction of excited atoms in the plasma.

Spectroscopic Study and Amorphous Film Deposition in RF and Pulsed Plasma Processings

1988 ◽  
Vol 117 ◽  
Author(s):  
Kenji Ebihara ◽  
Seiji Kanazawa ◽  
Sadao Maeda
Keyword(s):  
Processing System ◽  
Optical Emission ◽  
Quantitative Relationship ◽  
Amorphous Film ◽  
Film Deposition ◽  
Rf Discharge ◽  
Pulsed Plasma ◽  
Plasma Parameters ◽  
Optical Emission Spectrum ◽  
Plasma State

AbstractProcessing plasmas generated by three types of discharges are diagnosed spectroscopically in order to estimate the quantitative relationship between plasma parameters and electrical and optical properties of deposited materials. An rf discharge is capacitively produced by a 13.56 MHz rf oscillator. A microwave generator operating at 2.45 GHz is used to supply power to a discharge cavity. Further a pulsed plasma which is inductively generated by pulsed current ( 70 kA peak ) is applied to study dissociation process in the transient plasma and possibility of a novel processing system. The gases used are methane for amorphous carbon formation and silane for amorphous silicon deposition. Measurements of optical emission spectrum are performed to estimate the processing plasma state by the relative spectral intensity method and the Doppler-broadening method.

Measurement of the Cl Atom Concentration in RF Chlorine Plasmas by Two-Photon Laser-Induced Fluorescence

1992 ◽  
Vol 31 (Part 2, No. 3A) ◽  
pp. L269-L272 ◽  
Author(s):  
Kouichi Ono ◽  
Tatsuo Oomori ◽  
Mutumi Tuda
Keyword(s):  
Laser Induced Fluorescence ◽  
Atom Concentration ◽  
Two Photon ◽  
Cl Atom

Measurement and Modeling of Atomic Chlorine Concentrations in Plasma Processes

1988 ◽  
Vol 117 ◽  
Author(s):  
Jean-Philippe Nicolai ◽  
Kenneth D. Allen ◽  
Herbert H. Sawin
Keyword(s):  
Plasma Etching ◽  
Ground State ◽  
Surface Recombination ◽  
Gaseous Diffusion ◽  
Rf Plasmas ◽  
Two Photon ◽  
Spatially Resolved ◽  
Model Predictions ◽  
Atomic Chlorine ◽  
Order Surface

AbstractSpatially resolved concentration profiles of ground-state chlorine atoms were measured in CF3 Cl/Ar RF plasmas using two-photon laser induced fluorescence. A significant Cl gradient was found between the two electrodes under conditions typical for plasma etching. This experimental observation is consistent with previous model predictions which assumed the primary loss of Cl was a second-order surface recombination on the upper electrode which is partially limited by gaseous diffusion.

Spatial Generation Profiles of Active Radicals in Plasma-Enhanced CVD Of a-Si:H

1989 ◽  
Vol 165 ◽  
Author(s):  
D. Mataras ◽  
S. Cavadias ◽  
D. Rapakoulias
Keyword(s):  
Excited States ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Simultaneous Detection ◽  
Optical Emission ◽  
Laser Induced Fluorescence ◽  
Plasma Enhanced Cvd ◽  
Spatially Resolved ◽  
Kinetic Calculations

AbstractSpatially resolved Laser Induced Fluorescence and Optical Emission Spectroscopy were applied in an rf silane discharge, for the simultaneous detection of both ground and excited states of SiH radicals. Axial intensity profiles of these radicals were recorded under various conditions. The experimental observations indicate that the two radicals have different generation paths. LIF profiles are considered to represent the generation profile of all the ground state radicals and they were used as such in kinetic calculations.

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