Spatial Generation Profiles of Active Radicals in Plasma-Enhanced CVD Of a-Si:H

1989 ◽  
Vol 165 ◽  
Author(s):  
D. Mataras ◽  
S. Cavadias ◽  
D. Rapakoulias
Keyword(s):  
Excited States ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Simultaneous Detection ◽  
Optical Emission ◽  
Laser Induced Fluorescence ◽  
Plasma Enhanced Cvd ◽  
Spatially Resolved ◽  
Kinetic Calculations

AbstractSpatially resolved Laser Induced Fluorescence and Optical Emission Spectroscopy were applied in an rf silane discharge, for the simultaneous detection of both ground and excited states of SiH radicals. Axial intensity profiles of these radicals were recorded under various conditions. The experimental observations indicate that the two radicals have different generation paths. LIF profiles are considered to represent the generation profile of all the ground state radicals and they were used as such in kinetic calculations.

Optical Emission Spectroscopy Measurement of Ar\H2\CH4 RF Plasma for Nano-Crystal Diamond Film Deposition

2014 ◽  
Vol 1035 ◽  
pp. 373-378 ◽  
Author(s):  
Yan Chao Shi ◽  
Qin Jian Zhang ◽  
Jia Jun Li ◽  
Guang Chao Chen
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Diamond Films ◽  
Optical Emission ◽  
Film Deposition ◽  
Rf Plasma ◽  
Gas Mixture ◽  
Technical Application ◽  
Plasma Enhanced Cvd ◽  
Nano Crystal

Ar\H2\CH4 gas mixture was utilized to grow nanocrystal diamond films in a RF plasma enhanced CVD system. CH4\ H2 ratios were changed to study the effect of plasma radicals on the deposit, in which optical emission spectroscopy (OES) was applied to analyze the plasma radicals. It was found that Hα, Hβ, Hγ, CH, C2 were the main radicals in the plasma. Among them, the CH intensity of OES was usually quite strong and increased sharply when the ratio of CH4/H2 was greater than 3%. The intensity of C2 was weak and basically unchanged with the addition of methane. This study can provide a new possible technical application for depositing NCD films.

A Spectroscopic Study of the Conditions Required for Plasma Etching of Aluminium in BCl3 and Cl2 Plasmas

1987 ◽  
Vol 98 ◽  
Author(s):  
J. A. Cairns ◽  
R. Smailes ◽  
D. C. W. Blaikley ◽  
P. M. Banks ◽  
G. Hancock ◽  
...  
Keyword(s):  
Steady State ◽  
Plasma Etching ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Rf Plasma Discharge ◽  
State Models

ABSTRACTOptical Emission Spectroscopy (OES) with argon actinometry has been used to study the influence of machine parameters on the composition of a BCl3 RF plasma discharge in the absence and presence of aluminium. Two steady state models are proposed to account for the appearance of the various species seen, and to explain their relative abundances in response to changes in power and pressure. The validity of the actinometric technique for measuring relative changes in ground state concentrations is discussed also.

Spatially Resolved Optical Emission Spectroscopy of a Helium Plasma Jet and its Effects on Wound Healing Rate in a Diabetic Murine Model

2014 ◽  
Vol 4 (1-4) ◽  
pp. 177-191 ◽  
Author(s):  
Marc C. Jacofsky ◽  
Cheri Lubahn ◽  
Courtney McDonnell ◽  
Yohan Seepersad ◽  
Gregory Fridman ◽  
...  
Keyword(s):  
Wound Healing ◽  
Murine Model ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Healing Rate ◽  
Optical Emission ◽  
Plasma Jet ◽  
Helium Plasma ◽  
Spatially Resolved ◽  
Wound Healing Rate
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