Asymmetric Mosaic Spread During Relaxation in SiGe/ Si Strained Layer Superlattices Grown on Miscut Substrates

1995 ◽  
Vol 379 ◽  
Author(s):  
S. Nam ◽  
M. S. Goorsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Critical Thickness ◽  
Chemical Vapor ◽  
Misfit Dislocations ◽  
Satellite Peak ◽  
Strained Layer ◽  
Mosaic Spread ◽  
Peak Intensity ◽  
Strained Layer Superlattices

ABSTRACTThe evolution of defects in SiGe/Si strained layer superlattices (SLS)-with thickness and composition near the critical thickness -was investigated. The structures were grown on 2° miscut (001) substrates by ultrahigh vacuum chemical vapor deposition. The samples were then annealed between 700 °C and 900 °C. After annealing, the satellite peak intensity from double axis diffraction decreased and triple axis diffraction showed that this decreased intensity was due to increased mosaic structure. Interestingly, for some of the annealed samples, the (004) reciprocal space maps showed an asymmetric mosaic spread, indicating a preferential tilt. This result stems from a preferential propagation of certain types of misfit dislocations due to the substrate miscut.

scholarly journals The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition

1993 ◽  
Vol 325 ◽  
Author(s):  
R. M. Biefeld ◽  
K. C. Baucom ◽  
S. R. Kurtz ◽  
D. M. Follstaedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermodynamic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Metal Organic ◽  
Strained Layer Superlattices ◽  
Organic Chemical Vapor Deposition

AbstractWe have grown InAsl-xSbx/Inl-yGayAs strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at a temperature of 475 °C, at pressures of 200 to 660 torr and growth rates of 3 - 5 A/s and layer thicknesses ranging from 55 to 152 Å. The composition of the InAsSb ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Diodes have been prepared using Zn as the p-type dopant and undoped SLS as the n-type material. The diode was found to emit at 3.56 μm. These layers have been characterized by optical microscopy, SIMS, x-ray diffraction, and transmission electron diffraction. The optical properties of these SLS's were determined by infrared photoluminescence and absorption measurements.

Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers

2001 ◽  
Vol 16 (1) ◽  
pp. 24-27 ◽  
Author(s):  
C. K. Moon ◽  
H. J. Song ◽  
J. K. Kim ◽  
J. H. Park ◽  
S. J. Jang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Significant Shift ◽  
Misfit Dislocations ◽  
Chemical Vapor Deposition Growth ◽  
Hydrogen Flow ◽  
Soi Substrates ◽  
Sic Films

Epitaxial 3C–SiC films were grown by chemical vapor deposition on the silicon-on-insulator (SOI) substrates with 20–75-nm-thick Si top layers. A relatively low growth temperature of 1150 °C and a reduced hydrogen flow rate of 1 lpm during the precarbonization process was necessary to preserve the SOI structure and thereby obtain high-quality SiC films. The transmission electron microscopy observation of the SiC/SOI structures revealed high density of misfit dislocations in the SiC film, but no dislocation within the top Si layer. The x-ray-diffraction results did not show any significant shift of the (400) SiC peak position among the SiC/Si and the SiC/SOI samples. This strongly suggests that the Si top layer is not deformed during the SiC/SOI growth and the strain within the 3C–SiC layer is not critically affected by substituting the Si substrate with the SOI substrate, even when the Si top layer is as thin as 20 nm.

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