The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlattices

R. M. Biefeld

doi:10.1007/bf02659631

The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlattices

Journal of Electronic Materials ◽

10.1007/bf02659631 ◽

1986 ◽

Vol 15 (4) ◽

pp. 193-199 ◽

Cited By ~ 14

Author(s):

R. M. Biefeld

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Strained Layer Superlattices ◽

Metalorganic Chemical

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1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.234387 ◽

1993 ◽

Vol 29 (6) ◽

pp. 1528-1535 ◽

Cited By ~ 27

Author(s):

A. Kasukawa ◽

T. Namegaya ◽

T. Fukushima ◽

N. Iwai ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108163 ◽

1992 ◽

Vol 61 (21) ◽

pp. 2506-2508 ◽

Cited By ~ 33

Author(s):

Y. Imajo ◽

A. Kasukawa ◽

T. Namegaya ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.100935 ◽

1989 ◽

Vol 54 (6) ◽

pp. 499-501 ◽

Cited By ~ 70

Author(s):

P. K. York ◽

K. J. Beernink ◽

G. E. Fernández ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Buried Heterostructure ◽

Metalorganic Chemical

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A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition

IEEE Photonics Technology Letters ◽

10.1109/68.559375 ◽

1997 ◽

Vol 9 (4) ◽

pp. 422-424 ◽

Cited By ~ 23

Author(s):

M.L. Osowski ◽

R. Panepucci ◽

I. Adesida ◽

J.J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Titanium Surface ◽

Chemical Vapor ◽

Strained Layer ◽

Dfb Laser ◽

Metalorganic Chemical

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Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.102003 ◽

1989 ◽

Vol 55 (24) ◽

pp. 2476-2478 ◽

Cited By ~ 18

Author(s):

P. K. York ◽

K. J. Beernink ◽

J. Kim ◽

J. J. Coleman ◽

G. E. Fernández ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Metalorganic Chemical

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Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition

IEEE Photonics Technology Letters ◽

10.1109/68.623249 ◽

1997 ◽

Vol 9 (10) ◽

pp. 1319-1321 ◽

Cited By ~ 3

Author(s):

A.M. Jones ◽

B. Lent ◽

J.F. Kluender ◽

A.H. Moore ◽

W.A. Bonner ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Metalorganic Chemical

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Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97258 ◽

1986 ◽

Vol 49 (24) ◽

pp. 1659-1660 ◽

Cited By ~ 89

Author(s):

D. Feketa ◽

K. T. Chan ◽

J. M. Ballantyne ◽

L. F. Eastman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Graded Index ◽

Quantum Well Laser ◽

Metalorganic Chemical

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1.14 μm strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society ◽

10.1109/leos.1996.571584 ◽

2002 ◽

Author(s):

A.M. Jones ◽

J.F. Kluender ◽

S.D. Roh ◽

A.H. Moore ◽

W.A. Bonner ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Metalorganic Chemical

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Low threshold 1.3μm InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

13th IEEE International Semiconductor Laser Conference ◽

10.1109/islc.1992.763636 ◽

2005 ◽

Cited By ~ 5

Author(s):

A. Kasukawa ◽

Y. Imajo ◽

T. Namegaya ◽

Y. Hiratani ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Low Threshold ◽

Metalorganic Chemical

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Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two‐step metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108589 ◽

1993 ◽

Vol 62 (8) ◽

pp. 820-822 ◽

Cited By ~ 9

Author(s):

T. M. Cockerill ◽

J. Honig ◽

D. V. Forbes ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Distributed Feedback ◽

Strained Layer ◽

Metalorganic Chemical

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