The preparation of modulation-doped GaAs/GaAs1-xPx strained-layer superlattices by metal organic chemical vapor deposition

1987 ◽  
Vol 16 (5) ◽  
pp. 335-340 ◽  
Author(s):  
R. M Biefeld ◽  
I. J. Fritz ◽  
B. L. Doyle
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Strained Layer ◽  
Metal Organic ◽  
Strained Layer Superlattices ◽  
Organic Chemical Vapor Deposition

scholarly journals The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition

1993 ◽  
Vol 325 ◽  
Author(s):  
R. M. Biefeld ◽  
K. C. Baucom ◽  
S. R. Kurtz ◽  
D. M. Follstaedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermodynamic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Metal Organic ◽  
Strained Layer Superlattices ◽  
Organic Chemical Vapor Deposition

AbstractWe have grown InAsl-xSbx/Inl-yGayAs strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at a temperature of 475 °C, at pressures of 200 to 660 torr and growth rates of 3 - 5 A/s and layer thicknesses ranging from 55 to 152 Å. The composition of the InAsSb ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Diodes have been prepared using Zn as the p-type dopant and undoped SLS as the n-type material. The diode was found to emit at 3.56 μm. These layers have been characterized by optical microscopy, SIMS, x-ray diffraction, and transmission electron diffraction. The optical properties of these SLS's were determined by infrared photoluminescence and absorption measurements.

scholarly journals The Optimization of Interfaces in InAsSb/InGaAs Strained-Layer Superlattices grown by Metal-Organic Chemical Vapor Deposition

1994 ◽  
Vol 340 ◽  
Author(s):  
R. M. Biefeld ◽  
K. C. Baucom ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface Layer ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) using a variety of growth conditions. The presence of an InGaAsSb interface layer is indicated by the x-ray diffraction patterns. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. We used MOCVD to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS / InPSb laser which emitted at 3.9 μm with a maximum operating temperature of approximately 100 K.

The Growth and Optimization of InPSb/InGaAs/InAsSb Strained-Layer Superlattice Emitters by Metal Organic Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
R. M. Biefeld ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strained Layer ◽  
Metal Organic ◽  
Interface Layers ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have prepared InAsSb/InGaAs strained-layer superlattices (SLS's) and InPSb confinement layers using metal-organic chemical vapor deposition (MOCVD) for use as infrared emitters. X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLS's. Photoluminescence linewidth and intensity were used as a measure of the quality of the structures. Typical FWHM were less than 10 meV. The presence of interface layers were indicated by broadened x-ray diffraction peaks for samples grown under non-optimized conditions. Two types of interfacial layers apparently due to a difference in composition at the interfaces were observed with transmission electron microscopy (TEM). The width of the x-ray peaks can be explained by a variation of the interfacial layer thicknesses. Optimized growth resulted in SLS's with narrow x-ray peaks and high radiative efficiency. Room temperature LEDs operating between 4-5 μm have been prepared.

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