Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets

1995 ◽  
Vol 379 ◽  
Author(s):  
Christos Papavassiliou ◽  
G. Constantinidis ◽  
N. Kornilios ◽  
A. Georgakilas ◽  
E. LÖchterman ◽  
...  
Keyword(s):  
Misorientation Angle ◽  
Defect Density ◽  
Initial Study ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Mbe Growth ◽  
Gaas Mesfet ◽  
Gaas On Si ◽  
Dc Characteristics

ABSTRACTA systematic experimental investigation has been undertaken for the optimization of the wafer parameters and processing for silicon wafers intended for use as substrates for MBE growth, with emphasis on heteroepitaxial growth of GaAs-on- Si. Within this investigation, results are presented of an initial study focused on the optimization of the magnitude of the misorientation angle towards a <110> direction for the growth of GaAs on (001) Si wafers. This angle controls the structure of the stepped (001)Si surface and can influence the defect density and surface smoothness of the GaAs-on-Si layers. Silicon substrates misoriented from 0 deg. up to 9 deg. were cut to specification and subsequently used for the epitaxial growth of GaAs MESFET structures. MESFETs were fabricated and their dc and RF characteristics compared. The resistivity of the GaAs-on-Si buffer layers was evaluated and correlated to the results from device characterization. This work presents the effects of the magnitude of the angle of misorientation in the range from 0 to 9 deg.

Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

2006 ◽  
Vol 295 (2) ◽  
pp. 103-107 ◽  
Author(s):  
Wu-Yih Uen ◽  
Zhen-Yu Li ◽  
Yen-Chin Huang ◽  
Meng-Chu Chen ◽  
Tsun-Neng Yang ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Gaas On Si

Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si

1991 ◽  
Vol 115 (1-4) ◽  
pp. 122-127 ◽  
Author(s):  
W.Y. Uen ◽  
S. Sakawa ◽  
T. Nishinaga
Keyword(s):  
Comparative Study ◽  
Buffer Layers ◽  
Mbe Growth ◽  
Gaas On Si

Characteristics of all-OMCVD Grown GaAs MESFETS on Si Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
Jhang Woo Lee ◽  
R. M. McCullough ◽  
R. H. Morrison
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Buffer Layers ◽  
Low Background ◽  
Si Substrates ◽  
Turn On ◽  
Gaas Mesfet ◽  
Dc Characteristics ◽  
Key Factor ◽  
Background Doping

ABSTRACTWe present DC characteristics of all-OMCVD grown GaAs MESFET structures on Si substrates with unintentionally doped GaAs or AlGaAs buffer layers. MESFETs fabricated in two and three inch GaAs on Si wafers pinch off well and exhibit reasonably high transconductances up to 110 mS/mm for 1 μm gate devices. The reverse Schottky breakdown voltage of the MESFET gate is as high as 15 V and the forward turn on voltage is ∼0.65 V. The ohmic isolation is comparable to the typical homoepitaxial layer with a leakage current of 100 nA at a 1 V bias. The low background doping levels of unintentionally doped GaAs buffer layers is the key factor for this successful MESFET operation.

MBE Growth of GaAs on Si: Problems and Progress

1986 ◽  
Vol 67 ◽  
Author(s):  
Herbert Kroemer
Keyword(s):  
Buffer Layers ◽  
Misfit Dislocations ◽  
Extensive Discussion ◽  
Mbe Growth ◽  
Gaas On Si ◽  
Interface Charge

ABSTRACTSeveral fundamental problems are reviewed that must be solved if GaAs on Si growth is to be achieved with device-quality already close to the GaAs/Si interface, rather than relying on thick buffer layers: (a) antiphase disorder, (b) interface charge and cross-doping, and (c) misfit dislocations. An extensive discussion is given of the mechanism by which antiphase disorder is suppressed on (100)-oriented substrates

Growth of 3C-SiC Layers on Silicon Substrates with a Novel Stress Relaxation Structure

2001 ◽  
Vol 680 ◽  
Author(s):  
Yoshihiro Irokawa ◽  
Noboru Yamada ◽  
Masahito Kodama ◽  
Tetsu Kachi
Keyword(s):  
Stress Relaxation ◽  
Defect Density ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Cross Sectional ◽  
Si Substrates ◽  
Micro Raman Spectroscopy ◽  
Pressure Chemical ◽  
Relaxation Structure

ABSTRACTSilicon (Si) substrates having cavities just beneath the surface layer (multi-cavity Si substrates) were examined whether they worked as the stress relaxation structure in 3C-SiC heteroepitaxial growth on Si. Single crystalline 3C-SiC layers were grown on the multi-cavity Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by the cross-sectional TEM observations and the Micro-Raman spectroscopy. The TEM results showed that this structure reduced the defect density in the 3C-SiC layers. The averaged full width at half-maximum (FWHM) of LO Raman mode in the 3C-SiC layerson the multi-cavity Si substrates became narrower than that on the conventional Si substrates. Furthermore, Schottky barrier structures showed that the reverse leakage current of the diodes using the multi-cavity Si substrates is smaller than that using the conventional Si substrates. These results indicate that the multi-cavity Si substrates are effective for stress relaxation in the 3C-SiC layers.

Characteristics of All-Omcvd Grown GaAs Mesfets on Si Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
Jhang Woo Lee ◽  
R. E. McCullough ◽  
R. H. Morrison
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Buffer Layers ◽  
Low Background ◽  
Si Substrates ◽  
Turn On ◽  
Gaas Mesfet ◽  
Dc Characteristics ◽  
Key Factor ◽  
Background Doping

AbstractWe present DC characteristics of all-OMCVD grown GaAs MESFET structures on Si substrates with unintentionally doped GaAs or AlGaAs buffer layers. MESFETs fabricated in two and three inch GaAs on Si wafers pinch off well and exhibit reasonably high transconductances up to 110 mS/mm for 1 µm gate devices. The reverse Schottky breakdown voltage of the MESFET gate is as high as 15 V and the forward turn on voltage is ~0.65 V. The ohmic isolation is comparable to the typical homoepitaxial layer with a leakage current of 100 nA at a I V bias. The low background doping levels of unintentionally doped GaAs buffer layers is the key factor for this successful MESFET operation.

Improvement of Minority-Carrier Properties of GaAs on Si

1989 ◽  
Vol 145 ◽  
Author(s):  
S.M. Vernon ◽  
R.K. Ahrenkiel ◽  
M.M. Al-Jassim ◽  
T.M. Dixon ◽  
K.M. Jones ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Defect Density ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Minority Carrier Lifetime ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Nucleation Layer ◽  
Material Quality ◽  
Gaas On Si

AbstractGaAs-on-Si structures have been grown by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD); in some samples, the GaAs nucleation layer was deposited by atomic layer epitaxy (ALE). Material quality has been characterized by Nomarski microscopy, time-resolved photoluminescence, trans- mission electron microscopy, and the performance of photovoltaic devices. The minority-carrier lifetime has been correlated with defect density and growth parameters. The use of a thermal-cycle-growth technique is seen to be a major factor in improving GaAs-on-Si material quality without resorting to the use of thick buffer layers.

GaAs MESFET's on Silicon Substrates for Digital IC Applications

1986 ◽  
Vol 67 ◽  
Author(s):  
Hisashi Shichijo ◽  
Jhang Woo Lee
Keyword(s):  
Threshold Voltage ◽  
Silicon Substrate ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Device Structure ◽  
Bulk Gaas ◽  
Gaas On Si

ABSTRACTThe characteristics of GaAs MESFETs in GaAs-on-Si have been studied in detail for digital IC applications. The device structure utilizes GaAs and AlGaAs undoped buffer layers grown on a 3 degrees off (100) silicon substrate by MBE. The threshold voltage of the MESFET is adjusted by recessing the gate.The maximum observed transconductance of 135 mS/mm is comparable to what is expected from the bulk GaAs device with the same parameters. The device also shows good pinch-off characteristics. Both enhancement and depletion mode MESFETs have been fabricated.

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